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Attachment removal method and dry etching method

A dry etching and attachment technology, which is applied in the directions of cleaning methods, cleaning methods and utensils, chemical instruments and methods using gas flow, etc., which can solve the problems of reduced etching speed, iodine contamination on the substrate surface, and no removal of iodine-containing substances. , to achieve the effect of suppressing adverse conditions

Active Publication Date: 2019-11-05
CENT GLASS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the influence of the iodine-containing substance adhering to the substrate, there is a problem that the etching rate decreases and the etching does not proceed.
[0010] In addition, if the iodine compound generated during etching accumulates on the surface of the substrate without treatment, iodine contamination remains on the surface of the substrate.
If the substrate surface is further exposed to the atmosphere in this state, there is a problem that the iodine compound reacts with moisture in the atmosphere to produce hydrogen iodide (HI), iodic acid (HIO 3 ), etc., may cause corrosion of metal parts such as the inside of the chamber and the exhaust pipe.
However, the film to be removed in Reference 4 is an oxide semiconductor film containing In, Ga, and Zn, and there is no description about the removal of iodine-containing substances.
In addition, when the containing substance is removed under the conditions described in Patent Document 4, the Al-based material that is a constituent material of the etching device will be corroded, so it is not preferable.

Method used

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  • Attachment removal method and dry etching method
  • Attachment removal method and dry etching method
  • Attachment removal method and dry etching method

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Experimental program
Comparison scheme
Effect test

no. 1 approach

[0047] Hereinafter, embodiments of the present invention will be described in detail.

[0048] The first embodiment of the present invention is a method for removing deposits, which uses a cleaning gas containing fluorine-containing gas to remove iodine oxides that adhere to the surface of the components constituting the chamber or the pipes connected to the chamber. attachments.

[0049] It should be noted that the iodide oxide is preferably composed of the chemical formula: [I x o y f z (x represents an integer of 1 or 2, y represents an integer of more than 1 and less than 5, and z represents an integer of 0 or 1)] represents that the most stable iodine oxide represented by this chemical formula is I 2 o 5 , if it is possible to remove I 2 o 5 , other iodine oxides can also be removed in most cases. In addition, among the attachments, by I x o y f z Among the oxidized iodides shown, a plurality of oxyiodides having different compositions may be contained.

[0050...

no. 2 approach

[0059] In addition, the second embodiment of the present invention is a dry etching method including the step of etching the surface of the substrate and the step of removing deposits.

[0060] The dry etching method according to the second embodiment is characterized in that it includes: an etching step of supplying an etching gas containing an iodine-containing gas into the chamber to etch the substrate surface; The cleaning gas of the fluorine-containing gas removes the deposit removal process of deposits containing iodine oxide adhering to the interior of the chamber.

[0061] When the cleaning gas contains fluorine or iodine heptafluoride, it is preferable to heat the inside of the chamber and the exhaust piping in order to effectively remove deposits containing iodine oxides. On the other hand, the cleaning gas contains ClF 3 When, iodine oxide can be removed even at low temperature, in addition, for example, etching using iodine heptafluoride and using ClF can be perfo...

Embodiment 1

[0081] Hereinafter, the main first embodiment and the second embodiment of the present invention will be described in detail using Example 1, but the present invention is not limited to this Example 1.

[0082] [Reactive Survey]

[0083] for i x o y f z (x represents an integer of 1 or 2, y represents an integer of 1 to 5, and z represents an integer of 0 or 1), the most stable I 2 o 5 , to implement a reactive survey.

[0084] exist figure 2 In the differential thermal / thermogravimetric measuring device as shown, respectively weigh I as the test sample 22 2 o 5 , as Al of reference sample 23 2 o 3 , set on the sample stage. Under the following conditions, while the gas was flowing, the stage temperature was raised, and the sample temperature and weight change with respect to the stage temperature were measured. Figure 3 ~ Figure 5 means I 2 o 5 Table 1 shows the temperature dependence of the weight change under different reactive gas flows in the reactivity inv...

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Abstract

The present invention suppresses disadvantages when etching is performed using an etching gas containing iodine heptafluoride. Provided is a method for removing deposits in which deposits containing iodine oxide adhering to the surface of a member constituting a chamber or a pipe connected to the chamber is removed using a cleaning gas containing a fluorine-containing gas. In addition, a dry etching method is provided, which includes: supplying an etching gas containing an iodine-containing gas into a chamber to etch a substrate surface, and after etching the substrate surface, using an etching gas containing a fluorine-containing gas Cleaning gas is a process of removing deposits containing iodine oxide adhering to the surfaces of components constituting the chamber or piping connected to the chamber.

Description

technical field [0001] The present invention relates to a method for removing iodine-containing substances such as iodine oxides and iodine compounds adhering to the inside of a chamber and on an exhaust pipe. Background technique [0002] Silicon compounds are important and indispensable materials in the field of semiconductors. For example, silicon oxide film used in a wide range of fields as the gate insulating film of semiconductor elements, amorphous silicon film and silicon nitride film used in thin-film transistors, and polysilicon materials used in three-dimensional structure devices such as MEMS, low power Consumable silicon carbide (SiC) for transistors, etc. In particular, semiconductor elements such as transistors included in DRAM and flash memory are being highly integrated year by year, and silicon semiconductor devices are attracting attention. [0003] Generally, in semiconductor manufacturing processes, silicon and silicon compounds are processed into pred...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/3065H01L21/302H01L21/304
CPCH01L21/3065H01L21/67017H01L21/32135H01L21/67069H01L21/02049H01L21/302H01L21/304H01L21/67034H01L21/67098B08B5/00B08B9/00H01L21/02046H01L21/02076H01L21/30604H01L21/31116H01L31/18
Inventor 菊池亚纪应涉仁纪龟田贤治桧山真坪田康寿
Owner CENT GLASS CO LTD