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Si for a microwave kiln 2 no 2 o Wave-transmitting-heat-insulating integrated lining material and preparation method thereof

A microwave kiln and wave-transmitting technology, which is applied in the field of refractory materials, can solve problems such as carbon residues, affecting high-temperature wave-transmitting properties, and affecting high-temperature dielectric properties of materials, achieving good heat insulation, easy control of the molding process, and pore structure. control effect

Active Publication Date: 2019-11-15
ZHENGZHOU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On Single Phase Porous Si 2 N 2 The influence of O ceramic pore quantity and pore size distribution characteristics on its performance has not been reported yet. In the prior art, Si 2 N 2 Most O ceramic materials also contain Si 3 N 4 and SiO 2 and other ingredients, and sintering aids are often added in its preparation method, which affects Si 2 N 2 High temperature dielectric properties of O materials
In addition, most of the existing porous body preparation processes add organic pore-forming agents, which can easily cause carbon residues, thereby affecting its high-temperature wave-transmitting performance

Method used

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  • Si for a microwave kiln <sub>2</sub> no <sub>2</sub> o Wave-transmitting-heat-insulating integrated lining material and preparation method thereof
  • Si for a microwave kiln <sub>2</sub> no <sub>2</sub> o Wave-transmitting-heat-insulating integrated lining material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0040] Mix 8mL tetraethyl orthosilicate with 4mL distilled water and 24ml ethanol evenly, pre-hydrolyze for 0.5h, slowly add 6g of amorphous silicon nitride powder into the above mixed solution, stir magnetically at 40°C for 4h, adjust the pH value to 9 with ammonia water; 40°C constant temperature water bath for 1h to obtain SiO 2 Uniformly coated amorphous silicon nitride gel. SiO 2 The uniformly coated amorphous silicon nitride gel was frozen in a super refrigerator at -40°C for 1 hour, then placed in a vacuum drying oven, dried at 60°C for 12 hours, and then cooled to room temperature. Under the protection of atmospheric nitrogen, freeze-dried SiO 2 The uniformly coated amorphous silicon nitride gel is heated from room temperature to 800°C within 2 hours, then from 800°C to 1400°C within 1 hour, then from 1400°C to 1600°C within 70 minutes and kept for 60 minutes, then cooled to room temperature Obtain Si for microwave kiln 2 N 2 O wave-transparent-heat-insulating int...

Embodiment 2

[0043] Mix 12mL of ethyl orthosilicate with 6mL of distilled water and 26ml of ethanol evenly, pre-hydrolyze for 1 hour, slowly add 6g of amorphous silicon nitride powder into the above mixed solution, stir magnetically at 40°C for 4 hours, adjust the pH value of the mixed solution to 8.5 with ammonia water; Then 40 ℃ constant temperature water bath for 1h, get SiO 2 Uniformly wrapped amorphous silicon nitride gel. SiO 2 The uniformly coated amorphous silicon nitride gel was frozen in a super refrigerator at -40°C for 1 hour, then placed in a vacuum drying oven, dried at 60°C for 12 hours, and then cooled to room temperature. Under the protection of atmospheric nitrogen, freeze-dried SiO 2 The uniformly coated amorphous silicon nitride gel is heated from room temperature to 800°C within 2 hours, then from 800°C to 1400°C within 1 hour, then from 1400°C to 1650°C within 85 minutes and kept for 70 minutes, then cooled to room temperature Obtain Si for microwave kiln 2 N 2 O...

Embodiment 3

[0046] Mix 9mL of ethyl orthosilicate with 5mL of distilled water and 25ml of ethanol evenly, pre-hydrolyze for 1.5h, add 6g of amorphous silicon nitride powder into the above mixed solution, stir magnetically at 40°C for 4h, adjust the pH value of the mixed solution to 8 with ammonia water; Then 40°C constant temperature water bath for 0.5h to obtain SiO 2 Uniformly coated amorphous silicon nitride gel. SiO 2 The uniformly coated amorphous silicon nitride gel was frozen in a super refrigerator at -40°C for 1 hour, then placed in a vacuum drying oven, dried at 60°C for 12 hours, and then cooled to room temperature. Under the protection of atmospheric nitrogen, freeze-dried SiO 2 The uniformly coated amorphous silicon nitride gel is heated from room temperature to 800°C within 2 hours, then from 800°C to 1400°C within 1 hour, then from 1400°C to 1700°C within 100 minutes and kept for 80 minutes, then cooled to room temperature Obtain Si for microwave kiln 2 N 2 O wave-tran...

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Abstract

The invention belongs to the field of refractory materials, and in particular relates to a Si2N2O wave transmission-heat insulation integrated inner lining material for a microwave kiln, and a preparation method of the material. The preparation method of the Si2N2O wave transmission-heat insulation integrated inner lining material for the microwave kiln comprises the following step: calcining silicon nitride gel, the surface of which is coated with SiO2, for 60-80min at the temperature of 1600-1750 DEG C under the protection of inert atmosphere so as to obtain the Si2N2O wave transmission-heat insulation integrated inner lining material. The Si2N2O wave transmission-heat insulation integrated inner lining material for the microwave kiln has the porosity of 60-70%, the dielectric constant of 3.4-5.3 and the dielectric loss tg delta of less than 2.5*10<-3>; the material is excellent in heat preventing and heat insulation performances, bearing performance, impact resistance, wave transmittance and the like under the harsh conditions of high temperature, high pressure, strong corrosion and the like, thus having better application prospect in the aspect of microwave high temperature sintering kilns.

Description

technical field [0001] The invention belongs to the field of refractory materials, in particular to a Si 2 N 2 O Wave-transparent-heat-insulating integrated lining material and preparation method thereof. Background technique [0002] Microwave heating has become a rapidly developing research hotspot in recent years because it produces no waste water, waste gas, and waste, is green and environmentally friendly, has fast densification speed, saves energy, and homogeneous body heating can make the microstructure of materials uniform, thereby improving material properties. [0003] The essence of microwave sintering is that the sample relies on its own dielectric loss to absorb microwaves, and generates heat from the inside, presenting a volume "thermal effect" process. Due to the particularity of the interaction between microwaves and substances, refractory materials used as thermal insulation structures in microwave kilns also have special requirements. : In addition to exc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01Q1/42C04B38/00C04B35/66C04B35/584C04B35/14C04B35/624
CPCC04B35/14C04B35/584C04B35/624C04B35/66C04B38/0045C04B2235/661C04B2235/96C04B38/0074
Inventor 范冰冰李红霞李威冯华阳王刚张锐叶国田
Owner ZHENGZHOU UNIV
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