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A kind of near-net-shape diamond/copper composite material with high thermal conductivity and preparation method thereof

A composite material and diamond technology, applied in the field of metal materials, can solve the problems of poor compatibility between diamond and metal, single shape of composite material, and low surface quality, so as to reduce interface thermal resistance, high surface quality, and improve two-phase compatibility sexual effect

Active Publication Date: 2019-01-29
GUANGDONG ZHENGDE MATERIAL SURFACE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the relatively mature methods for preparing diamond / copper composite materials mainly focus on high temperature and high pressure method, pressure infiltration method, hot pressing sintering, spark plasma sintering (SPS) method, but the preparation of composite materials by these methods requires huge equipment and consumes energy. The finished product is high, the production cost is high, and the obtained composite material has a single shape, the compatibility between diamond and metal is poor, it is difficult to machine, and the surface quality is not high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] After surface purification, degreasing, and roughening treatments, 200g of diamond particles with an average particle size of 105μm are mixed with 2380gW powder in a ball mill and then taken out, under the protection of a mixed salt bath (the mass ratio of KCl and NaCl is 1:1) Heat to 1150℃, keep the temperature for 120 minutes, and cool down with the furnace to obtain diamond particles on the surface of W. The thickness of the tungsten plating layer and tungsten carbide layer is 3μm; the diamond particles on the surface of W and the binder (the binder includes the following Raw materials in weight ratio: 50% paraffin wax, 20% high-density polyethylene, 10% stearic acid and 20% polypropylene) at a mass ratio of 13:1, fully mixed to form a feed, injection molded on an injection molding machine, and degreasing The porous diamond preform is then obtained. Put an appropriate amount of copper on top of the diamond preform, in which the mass ratio of copper and diamond preform...

Embodiment 2

[0036] After surface purification, degreasing, and roughening treatments, 200g of diamond particles with an average particle size of 105μm are mixed with 3570gW powder in a ball mill and taken out, under the protection of a mixed salt bath (the mass ratio of KCl and NaCl is 1:1) Heat to 1150℃, keep the temperature for 120 minutes, and cool down with the furnace to obtain diamond particles on the surface of W. The thickness of the tungsten plating layer and tungsten carbide layer is 3μm; the diamond particles on the surface of W and the binder (the binder includes the following Raw materials in weight ratio: 40% paraffin wax, 25% high-density polyethylene, 10% stearic acid and 25% polypropylene) at a mass ratio of 13:1, fully mixed to form feedstock, injection molded on an injection molding machine, and degreasing The porous diamond preform is then obtained. Put an appropriate amount of copper on top of the diamond preform, in which the mass ratio of copper to diamond preform is...

Embodiment 3

[0038] After surface purification, degreasing, and roughening treatments, 20g of diamond particles with an average particle size of 105μm are mixed with 357gW powder in a ball mill and taken out, and protected in a mixed salt bath (the mass ratio of KCl and NaCl is 1:1) Heat to 1150℃, keep the temperature for 20 minutes, and cool down with the furnace to obtain diamond particles with W-plated surface. The thickness of the tungsten coating and tungsten carbide layer is 1μm; the diamond particles with W-plated surface and the binder (the binder includes the following Raw materials by weight ratio: 60% paraffin wax, 16% high-density polyethylene, 8% stearic acid and 16% polypropylene) are fully mixed at a mass ratio of 13:1, pressed in a mold, and degreasing to obtain porous diamond Preform: Put an appropriate amount of copper on top of the diamond preform, where the mass ratio of copper and diamond preform is 2:1, heated to 1300°C in an argon atmosphere, kept for 60 minutes, and c...

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PUM

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Abstract

The invention discloses a high-heat-conduction near-net-shaped diamond / copper composite and a preparing method thereof, and belongs to the field of metal materials. The diamond / copper composite is of a three-dimensional communication structure and is composed of a diamond particle framework, a transition layer, metal copper and surface seepage copper; the preparing method comprises the steps that diamond particles subject to salt-bath plating W are subject to near net shaping, and a pressure-free infiltration method is adopted to prepare the high-heat-conduction composite. The method effectively solves the problems about compatibility of diamond and metal, difficult machining of the diamond / copper composite, poor surface quality, single product shapes, high production cost and the like; the prepared composite is high in compactness, uniform in structure distribution, controllable in interface thickness, high in heat conduction rate, simple in process device, high in operation, low in energy consumption cost, capable of being produced in a large-batch manner, and capable of meeting the requirement of the heat management or electronic package field and has the high heat conduction property.

Description

Technical field [0001] The invention belongs to the field of metal materials, and relates to a diamond / copper composite material, in particular to a diamond / copper composite material with high thermal conductivity and near net shape and a preparation method. Background technique [0002] With the rapid development of electronic information technology, the computing speed of chips in electronic devices is getting faster and faster, and the integration of chips is getting higher and higher. The highest power density of high-power integrated circuits has reached 660W / cm 2 , Soon up to 1000W / cm 2 . Fast microprocessors and high-power semiconductor devices often fail to work normally due to high temperatures in applications. Therefore, the development of electronic packaging materials with high thermal conductivity has become a major bottleneck in the development of electronic information technology. In addition, the thermal expansion coefficient of the electronic packaging material n...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C22C26/00C22C1/10
CPCC22C1/1036C22C26/00
Inventor 董应虎张瑞卿曾德长
Owner GUANGDONG ZHENGDE MATERIAL SURFACE TECH
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