Low-on-resistance hydrogen terminal diamond field effect transistor and manufacturing method thereof

A field-effect transistor and low on-resistance technology, applied in the field of microelectronics, can solve the problem of large parasitic resistance in series at both ends of the channel, so as to improve saturation current and frequency characteristics, reduce on-resistance, and increase breakdown voltage Effect

Active Publication Date: 2017-05-31
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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Problems solved by technology

[0006] The purpose of the present invention is to provide a low on-resistance hydrogen-terminated diamond field-effect transistor and its preparation method, which can solve the parasitic re

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  • Low-on-resistance hydrogen terminal diamond field effect transistor and manufacturing method thereof
  • Low-on-resistance hydrogen terminal diamond field effect transistor and manufacturing method thereof
  • Low-on-resistance hydrogen terminal diamond field effect transistor and manufacturing method thereof

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[0046] Example

[0047] Such as Figure 1 to Figure 8 As shown, the method for preparing a low on-resistance hydrogen-terminated diamond field effect transistor of the present invention has the following steps:

[0048] 1) Using conventional graphene transfer technology, transfer a layer of graphene film on a hydrogen-terminated single crystal diamond substrate;

[0049] 2) Carry out photolithography and development of the source and drain pattern on the sample, evaporate the Au / Pt / Ti source and drain metal, and strip it with acetone solution, then pass acetone and ethanol solution in sequence, clean with deionized water, and dry with nitrogen;

[0050] 3) The sample is annealed at 600°C for 1 hour in a hydrogen atmosphere. The underlying metal Ti reacts with graphene and diamond to generate TiC, achieving low ohmic contact;

[0051] 4) Using atomic layer deposition (ALD) technology to grow 50nm thick Al 2 O 3 Passivate the protective layer while preventing subsequent hydrogenation of ...

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Abstract

The invention discloses a low-on-resistance hydrogen terminal diamond field effect transistor and a manufacturing method thereof. The method comprises the steps of transferring a graphene thin film to a hydrogen terminal diamond substrate to obtain a sample by adopting a graphene transfer technology; photoetching source-drain graphics and carrying out source-drain metal evaporation and stripping; carrying out annealing treatment; growing an Al2O3 passivation protection layer by adopting an atomic layer deposition (ALD) technology; carrying out gate exposure and development by adopting a lithography or electron beam technology and selectively exposing a gate electrode; etching away Al2O3 at the lower part of the gate electrode by using hydrofluoric acid and forming lateral etching by the Al2O3; removing graphene at the lower part of the gate electrode by using oxygen plasma; growing a layer of thin Al2O3 gate dielectric by adopting ALD; evaporating a gate metal and stripping the gate metal; and carrying out surface hydrogen treatment on the stripped sample and repairing and strengthening hydrogen terminalization on a device channel to obtain the hydrogen terminal diamond field effect transistor. Lower source-drain parasitic resistance can be obtained under the same thickness.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, in particular to a hydrogen-terminated diamond field-effect transistor with low conduction resistance and a preparation method thereof. Background technique [0002] Diamond is an allotrope of carbon with a series of excellent material properties such as optical transparency, high elastic modulus, high hardness and chemical corrosion resistance. The diamond bandgap width is 5.5eV, and the critical breakdown field strength is as high as 10MV / cm, which is more than three times that of SiC and GaN; the thermal conductivity is as high as 22W cm -1 ·K -1 , is the highest among all semiconductor materials; electron and hole mobilities are as high as 4500cm 2 / V·s and 3800cm 2 / V·s. As a new type of wide-bandgap semiconductor material, diamond combines excellent physical, chemical and mechanical properties, and is an ideal material for the preparation of microwave high-power electronic devi...

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Application Information

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IPC IPC(8): H01L21/04H01L29/78
CPCH01L21/0405H01L29/66045H01L29/78
Inventor 郁鑫鑫周建军孔岑
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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