Zinc oxide transparent electrode-based opposed-contact photoconductive switch and fabrication method thereof

Abstract

The present invention discloses a zinc oxide transparent electrode-based opposed-contact photoconductive switch. The zinc oxide transparent electrode-based opposed-contact photoconductive switch includes a vanadium-doped silicon carbide substrate (1), an upper ohmic contact electrode (2), a lower ohmic contact electrode (3), an upper thin film electrode (4) and a lower thin film electrode (5); the upper ohmic contact electrode (2) and the lower ohmic contact electrode (3) are respectively deposited on the front surface and back surface of the vanadium-doped silicon carbide substrate (1); the upper thin film electrode (4) is deposited on the front surface of the vanadium-doped silicon carbide substrate (1) and the surface of the upper ohmic contact (2); the lower thin film electrode (5) is deposited on the back surface of the vanadium-doped silicon carbide substrate (1) and the surface of the lower ohmic contact electrode (3); the upper thin film electrode and the lower thin film electrode are both made of a transparent zinc oxide material; and therefore, the photoconductive switch can be turned on when the surfaces of the electrodes are under illumination, and the light receiving area of the device is increased, the photon concentration and laser energy utilization rate of a conductive channel can be improved. The photoconductive switch can be used for a high-speed pulse system.

Description

technical field

[0001] The invention belongs to the field of microelectronics, in particular to a transparent electrode different-surface photoconductive switch, which can be used as a switch in a high-speed and high-power pulse system.

[0002] technical background

[0003] In 1974, D.H.Auston of Bell Laboratories prepared the world's first silicon-based photoconductive switch, but due to the limitations of silicon materials, high-performance switches could not be obtained; in 1976, H.L.Chi of the University of Maryland prepared the first The first GaAs photoconductive switch, its performance is far superior to the silicon-based photoconductive switch, so in the following decades, the photoconductive switch of gallium arsenide has been relatively mature research. However, due to the unique Lock-on effect of the GaAs photoconductive switch, its application in a wider range is limited. With the maturity of the third-generation semiconductor silicon carbide material, it has gr...

Examples

Embodiment 1

[0033] Example 1, making a transparent electrode different-surface photoconductive switch. The diameter d of the bottom surface of the upper film electrode and the lower film electrode is 6mm, and the thickness is 1μm.

[0034] Step 1: Deposit barrier layers on the front and back of the vanadium-doped silicon carbide substrate sample respectively.

[0035] Using the PECVD method to deposit silicon dioxide with a thickness of 2 μm on the front and back of the rectangular parallelepiped silicon carbide substrate sample, as a barrier layer for ion implantation on the front and back of the substrate; image 3 a.

[0036] Step 2: Perform ion implantation on the front and back of the sample respectively.

[0037] (2a) Apply glue on the barrier layer on the front and back of the sample respectively, etch the ion implantation window on the barrier layer after coating with a photolithography plate, and use HF acid with a concentration of 5% to etch away the barrier layer under the wi...

Embodiment 2

[0053] Example 2, making a transparent electrode different-surface photoconductive switch. The diameter d of the bottom surface of the upper film electrode and the lower film electrode is 6.5mm, and the thickness is 1.5μm. The thickness of the upper ohmic contact electrode and the lower ohmic contact electrode is 1.165μm.

[0054] Step 1: Deposit barrier layers on the front and back of the vanadium-doped silicon carbide substrate sample respectively.

[0055] Using the PECVD method to deposit silicon dioxide with a thickness of 2.5 μm on the front and back of the rectangular parallelepiped silicon carbide substrate sample, as a barrier layer for ion implantation on the front and back of the substrate; image 3 a.

[0056] Step 2: Perform ion implantation on the front and back of the sample respectively.

[0057] First, apply glue on the barrier layer on the front and back of the sample respectively, use a photolithography plate to etch the ion implantation window on the barr...

Embodiment 3

[0073] Example 3, making a transparent electrode different-surface photoconductive switch. The diameter d of the bottom surface of the upper film electrode and the lower film electrode is 7mm, and the thickness is 2μm.

[0074] Step A: Depositing the front and back of the vanadium-doped silicon carbide substrate respectively.

[0075] Using the PECVD method to deposit silicon dioxide with a thickness of 3 μm on the front and back of the rectangular parallelepiped silicon carbide substrate sample, as a barrier layer for ion implantation on the front and back of the substrate; image 3 a

[0076] Step B: performing ion implantation on the front and back of the sample respectively.

[0077] (Ba) Apply glue on the barrier layer on the front and back of the sample respectively, etch the ion implantation window on the barrier layer after coating with a photolithography plate, and etch the barrier layer under the window position with HF acid with a concentration of 5%. , and remov...

technical field

[0001] The invention belongs to the field of microelectronics, in particular to a transparent electrode different-surface photoconductive switch, which can be used as a switch in a high-speed and high-power pulse system.

[0002] technical background

[0003] In 1974, D.H.Auston of Bell Laboratories prepared the world's first silicon-based photoconductive switch, but due to the limitations of silicon materials, high-performance switches could not be obtained; in 1976, H.L.Chi of the University of Maryland prepared the first The first GaAs photoconductive switch, its performance is far superior to the silicon-based photoconductive switch, so in the following decades, the photoconductive switch of gallium arsenide has been relatively mature research. However, due to the unique Lock-on effect of the GaAs photoconductive switch, its application in a wider range is limited. With the maturity of the third-generation semiconductor silicon carbide material, it has gr...

Examples

Embodiment 1

[0033] Example 1, making a transparent electrode different-surface photoconductive switch. The diameter d of the bottom surface of the upper film electrode and the lower film electrode is 6mm, and the thickness is 1μm.

[0034] Step 1: Deposit barrier layers on the front and back of the vanadium-doped silicon carbide substrate sample respectively.

[0035] Using the PECVD method to deposit silicon dioxide with a thickness of 2 μm on the front and back of the rectangular parallelepiped silicon carbide substrate sample, as a barrier layer for ion implantation on the front and back of the substrate; image 3 a.

[0036] Step 2: Perform ion implantation on the front and back of the sample respectively.

[0037] (2a) Apply glue on the barrier layer on the front and back of the sample respectively, etch the ion implantation window on the barrier layer after coating with a photolithography plate, and use HF acid with a concentration of 5% to etch away the barrier layer under the wi...

Embodiment 2

[0053] Example 2, making a transparent electrode different-surface photoconductive switch. The diameter d of the bottom surface of the upper film electrode and the lower film electrode is 6.5mm, and the thickness is 1.5μm. The thickness of the upper ohmic contact electrode and the lower ohmic contact electrode is 1.165μm.

[0054] Step 1: Deposit barrier layers on the front and back of the vanadium-doped silicon carbide substrate sample respectively.

[0055] Using the PECVD method to deposit silicon dioxide with a thickness of 2.5 μm on the front and back of the rectangular parallelepiped silicon carbide substrate sample, as a barrier layer for ion implantation on the front and back of the substrate; image 3 a.

[0056] Step 2: Perform ion implantation on the front and back of the sample respectively.

[0057] First, apply glue on the barrier layer on the front and back of the sample respectively, use a photolithography plate to etch the ion implantation window on the barr...

Embodiment 3

[0073] Example 3, making a transparent electrode different-surface photoconductive switch. The diameter d of the bottom surface of the upper film electrode and the lower film electrode is 7mm, and the thickness is 2μm.

[0074] Step A: Depositing the front and back of the vanadium-doped silicon carbide substrate respectively.

[0075] Using the PECVD method to deposit silicon dioxide with a thickness of 3 μm on the front and back of the rectangular parallelepiped silicon carbide substrate sample, as a barrier layer for ion implantation on the front and back of the substrate; image 3 a

[0076] Step B: performing ion implantation on the front and back of the sample respectively.

[0077] (Ba) Apply glue on the barrier layer on the front and back of the sample respectively, etch the ion implantation window on the barrier layer after coating with a photolithography plate, and etch the barrier layer under the window position with HF acid with a concentration of 5%. , and remov...

Images