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Preparation method of surface-modified g-C3N4

A surface modification, g-c3n4 technology, applied in the field of materials and catalysis science, can solve the problems of narrow absorption range, small specific surface area and low catalytic activity

Inactive Publication Date: 2017-07-18
CHINA UNIV OF PETROLEUM (EAST CHINA)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since g-C prepared by the traditional one-pot method 3 N 4 The shortcomings of small specific surface area, narrow visible light absorption range, and low catalytic activity limit its application in the field of catalysis, so people have carried out a lot of research on its modification, including morphology design, metal ion doping, and organic molecule copolymerization. , Construction of semiconductor heterojunctions, etc., have made some progress
However, since g-C 3 N 4 High physical and chemical stability, but there are few studies on its surface modification, and the abundant amine defect groups on its surface can provide the possibility for modification research

Method used

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  • Preparation method of surface-modified g-C3N4
  • Preparation method of surface-modified g-C3N4
  • Preparation method of surface-modified g-C3N4

Examples

Experimental program
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Effect test

Embodiment 1

[0023] Weigh 600mg of g-C 3 N 4 and 1200mg of sodium chloride, mixed and ground evenly, and then in N 2 Calcined at 550°C for 4 hours under protection, then centrifuged and washed with water to obtain modified g-C 3 N 4 (referred to as Na-4h).

Embodiment 2

[0025] Weigh 600mg of g-C 3 N 4 and 1200mg potassium chloride, the mixture is ground evenly, and then in N 2 Calcined at 550°C for 3 hours under protection, then centrifuged and washed with water to obtain modified g-C 3 N 4 (referred to as K-3h).

Embodiment 3

[0027] Weigh 600mg g-C 3 N 4 , 600mg sodium chloride and 600mg potassium chloride, mixed and ground evenly, then in N 2 Calcined at 550°C for 4 hours under protective conditions, then centrifuged and washed with water to obtain modified g-C 3 N 4(referred to as Na-K-4h).

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Abstract

The invention belongs to the fields of materials and catalysis and relates to a preparation method of surface-modified g-C3N4. The preparation method comprises the following steps: firstly, creatively carrying out direct high-temperature reaction on sodium halide, potassium halide or a mixture of sodium halide and potassium halide and g-C3N4; introducing water in the reaction process and enabling the modified g-C3N4 to contain hydroxide radicals; modifying corresponding metal ions on the surface of the modified g-C3N4. The method has the characteristics of simple operation, easiness in realization, low-priced and easily-obtained reaction raw materials, environment friendliness, high yield of the modified g-C3N4 and the like; in addition, abundant hydroxide radicals and porous structures on the surface of the modified g-C3N4 surface can generate abundant hydroxyl free radicals under visible light; the characteristics lay a foundation for actual application of the modified g-C3N4 in the field of photocatalysis.

Description

technical field [0001] The invention belongs to the field of material and catalysis science, in particular to a surface-modified g-C 3 N 4 method of preparation. The method is through a simple high-temperature reaction method, in g-C 3 N 4 Hydroxyl groups are formed on the surface of the material and loaded with metal ions. This method is implemented for the first time. Through this method, large quantities of surface-modified g-C can be rapidly and batch-prepared 3 N 4 , has broad prospects in the fields of solar cells, heterogeneous catalysis, and degradation of organic matter. Background technique [0002] g-C 3 N 4 (Graphitic Carbon Nitride, abbreviated as g-C 3 N 4 ) is an organic semiconductor material with a graphite-like structure. Since it was discovered in 2009 that it has photocatalytic hydrogen evolution activity, it has been extensively studied due to its stable physical and chemical stability, small band gap (2.7eV), and easy preparation method. Ho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24B01D53/86B01D53/62B01D53/58
CPCB01D53/62B01D53/86B01D53/8634B01J27/24B01D2257/504B01J35/39Y02A50/20
Inventor 吴文婷安祥辉邵晓东李忠涛吴明铂
Owner CHINA UNIV OF PETROLEUM (EAST CHINA)
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