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Preparing method for novel solid solution film/metal heterojunction photoelectrode

A solid solution and heterojunction technology, applied in the direction of electrodes, electrolytic processes, electrolytic components, etc., can solve the problems of poor controllability, cumbersome powder collection and electrode preparation processes, etc., achieve rapid response, overcome powder collection and electrode preparation The process is cumbersome and the effect of improving the bonding strength

Active Publication Date: 2017-08-04
HENAN UNIVERSITY OF TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention adopts the ultra-high pressure method to realize the preparation of the solid solution film on the six-sided top press, and at the same time introduces the metal substrate into the thin film preparation system to realize the one-step preparation of the solid solution film / metal heterojunction substrate photoelectrode, which is very good It overcomes the outstanding problems of poor controllability of the traditional solid solution phase structure and cumbersome powder collection and electrode preparation processes

Method used

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  • Preparing method for novel solid solution film/metal heterojunction photoelectrode

Examples

Experimental program
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Effect test

Embodiment 1

[0032] In this embodiment, a novel solid solution film / metal heterojunction photoelectrode, the preparation process is as follows:

[0033] The metal nickel sheet with a thickness of 0.5mm was punched into a φ12mm disc, and then subjected to ultrasonic treatment in deionized water, acetone, isopropanol and absolute ethanol for 10 minutes, and then in N 2 Blow dry and set aside;

[0034] According to solid solution Bi 2 MoO 6 Composition, weigh a certain amount of Bi according to the molar ratio of 1:1 2 O 3 And MoO 6 The powder is the raw material. After mixing thoroughly, grind the mixture to 600 mesh, then add a certain volume of absolute ethanol to the mixture under stirring conditions until the slurry does not stick to the stirring paddle, then fully stir to form a uniform slurry, and then take a certain amount Coat the slurry uniformly on the metal nickel sheet after the above treatment by volume to form a solid solution film layer with a thickness of 0.2mm, and dry it at 60°C ...

Embodiment 2

[0040] In this embodiment, a novel solid solution film / metal photoelectrode, the preparation process is as follows:

[0041] The metal titanium sheet with a thickness of 0.3mm was punched into a φ12mm disc, and then subjected to ultrasonic treatment in deionized water, acetone, isopropanol and absolute ethanol for 10 minutes, and then in N 2 Blow dry and set aside;

[0042] According to solid solution Bi 2 WO 6 Composition, weigh a certain amount of Bi according to the molar ratio of 1:1 2 O 3 And WO 3 The powder is the raw material. After mixing thoroughly, grind the mixture to 600 mesh, then add a certain volume of absolute ethanol to the mixture under stirring conditions until the slurry does not stick to the stirring paddle, then fully stir to form a uniform slurry, and then take a certain amount Coat the slurry uniformly on the metal titanium sheet after the above treatment by volume to form a solid solution film with a thickness of 0.2mm, and dry it at 80°C for 5 hours to obta...

Embodiment 3

[0046] In this embodiment, a novel solid solution film / metal photoelectrode, the preparation process is as follows:

[0047] The metal Ag sheet with a thickness of 0.6mm was punched into a φ12mm disc, and then subjected to ultrasonic treatment in deionized water, acetone, isopropanol, and absolute ethanol for 10 minutes, and then in N 2 Blow dry and set aside;

[0048] According to solid solution K 4 Ce 2 Ta 10 O 30 Composition, weigh a certain amount of K according to the molar ratio of 2:1:5 2 O, Ce 2 O 3 And Ta 2 O 5 The powder is the raw material. After mixing thoroughly, grind the mixture to 600 mesh, then add a certain volume of absolute ethanol to the mixture under stirring conditions until the slurry does not stick to the stirring paddle, then fully stir to form a uniform slurry, and then take a certain amount Coat the slurry uniformly on the metal Ag sheet after the above treatment by volume to form a solid solution film layer with a thickness of 0.15mm, and dry it at 75°C ...

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Abstract

The invention provides a preparing method for a novel solid solution film / metal heterojunction photoelectrode. In the preparing process, raw materials are weighed according to compositions of a solid solution, after sufficient grinding and mixing, ethyl alcohol is added, and uniform pulp is obtained through stirring; then a conductive substrate obtained after pretreatment is evenly coated with the pulp, drying is conducted for 5 h at the temperature ranging from 50 DEG C to 80 DEG C, the conductive substrate is wrapped by molybdenum foil and arranged in a high-temperature and high-pressure assembling sample chamber to be assembled, and drying is conducted for 3 h at the temperature of 120 DEG C after assembling is finished; an assembled block is then placed in high-pressure sintering equipment, pressure maintaining is conducted for 10 min under the conditions that the growing pressure ranges from 0.5 GPa to 6.5 GPa and the temperature ranges from 800 K to 1,300 K, pressure releasing is slowly conducted, the assembled block is taken out, a sample is taken out, the molybdenum foil is removed, and a target product is obtained. According to the preparing method, an oxide solid solution photocatalysis film is synthesized on the conductive metal substrate through one step via a high-temperature and high-pressure method for the first time, the visible light response of the solid solution film is brought into play, a physical bond is introduced between the oxide solid solution photocatalysis film and the conductive metal substrate, the bonding strength between the oxide solid solution photocatalysis film and the conductive metal substrate is greatly improved, effective separation and transportation of photon-generated carriers are promoted, and an efficient photoelectrode material is achieved.

Description

Technical field [0001] The invention belongs to the technical field of nanocomposite materials and mechanical processing, and particularly relates to a method for preparing a novel solid solution film / metal heterojunction photoelectrode. Background technique [0002] Hydrogen energy has a wide range of sources, various forms of utilization, and good combustion performance. The product of combustion is only water, and the water produced by combustion can continue to produce hydrogen and can be recycled. Therefore, hydrogen energy is considered to be the most promising alternative energy source in the 21st century. Among the many hydrogen production methods, the direct decomposition of water by sunlight is the most attractive, which is called "dream-like technology". This technology originated from the Honda-Fujishima effect reported in 1972. Over the years, people have carried out a lot of research work in this field and made a lot of progress. However, the low photocatalytic eff...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/06C25B1/04
CPCC25B1/04C25B1/55C25B11/051C25B11/057C25B11/077Y02E60/36
Inventor 刘世凯刘恒源郭丽萍刘鑫鑫
Owner HENAN UNIVERSITY OF TECHNOLOGY
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