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Preparation method of phosphorus-doped graphite phase carbon nitride nano film

A graphite-phase carbon nitride and nano-film technology, applied in coatings and other directions, can solve the problems of poor water solubility of powder materials, complicated preparation process, and reduced catalytic performance, and achieve good shape, simple preparation process, and easy operation Effect

Inactive Publication Date: 2017-08-15
NORTHWEST NORMAL UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, on the one hand, the preparation process of the above method is complicated, time-consuming, and costly; on the other hand, the prepared powder material has poor water solubility and uneven dispersion, which will lead to a serious decline in catalytic performance during use.

Method used

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  • Preparation method of phosphorus-doped graphite phase carbon nitride nano film
  • Preparation method of phosphorus-doped graphite phase carbon nitride nano film
  • Preparation method of phosphorus-doped graphite phase carbon nitride nano film

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] The preparation method of phosphorus-doped graphite phase carbon nitride nano film comprises the following steps:

[0022] (1) Dissolve 9g of 2,4-diamino-1,3,5-triazine and 6.5g of cyanuric acid solid powder in 200mL of distilled water, stir at room temperature for 18h and then filter with suction. After drying at ℃ to obtain a graphite phase carbon nitride precursor, grind it for later use; take a few pieces of 1.5×2.5 FTO glass and put them in a beaker, wash them with tap water, ethanol and distilled water for 30 minutes, then dry them with nitrogen, and set them aside;

[0023] (2) Put the clean FTO glass conductive side up in the crucible, weigh 1.3g of the graphite-phase carbon nitride precursor powder in step (1), spread it on the FTO glass, and calcinate at 500°C under nitrogen protection 4h, the heating rate was 2.3°C / min, and a yellow graphite phase carbon nitride film was obtained;

[0024] (3) Ultrasonic the graphitic carbon nitride film in step (2) together...

Embodiment 2

[0029] The preparation method of phosphorus-doped graphite phase carbon nitride nano film comprises the following steps:

[0030](1) Dissolve 4.5g of 2,4-diamino-1,3,5-triazine and 3.25g of cyanuric acid solid powder in 100mL of distilled water, stir at room temperature for 18h and then filter with suction. Dry at 70°C to obtain a graphite phase carbon nitride precursor, grind it for later use; use the same method as in Step 1 (1) to clean the FTO glass for later use;

[0031] (2) Put the clean FTO glass conductive side up in the crucible, weigh 1.2g of the graphite phase carbon nitride precursor powder in step (1) and spread it on the FTO glass, and calcined at 520°C under nitrogen protection 4h, the heating rate was 2.4°C / min, and a yellow graphite phase carbon nitride film was obtained;

[0032] (3) Ultrasonic the graphitic carbon nitride film in step (2) together with the FTO glass to remove surface impurities and place it in a magnetic boat placed downstream of the tube ...

Embodiment 3

[0034] The preparation method of phosphorus-doped graphite phase carbon nitride nano film comprises the following steps:

[0035] (1) Dissolve 13.5g of 2,4-diamino-1,3,5-triazine and 9.75g of cyanuric acid solid powder in 300mL of distilled water, stir at room temperature for 24h and then filter with suction. Dry at 60°C to obtain a graphite-phase carbon nitride precursor, grind it for later use; take a few pieces of 1.5×2.5 FTO glass and place them in a beaker, rinse with tap water, ethanol and distilled water for 30 minutes, then blow dry with nitrogen, and set aside; Clean the FTO glass in the same way as in Step 1 (1) for later use;

[0036] (2) Put the clean FTO glass conductive side up in the crucible, weigh 1.0g of the graphite-phase carbon nitride precursor powder in step (1), spread it on the FTO glass, and calcinate at 550°C under nitrogen protection 4h, the heating rate was 2.5°C / min, and a yellow graphite phase carbon nitride film was obtained;

[0037] (3) Ultra...

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Abstract

The invention discloses a preparation method of a phosphorus-doped graphite phase carbon nitride nano film and belongs to the technical field of semiconductor nano materials. The preparation method comprises the following steps of: firstly, mixing a high molecular polymer 2,4-diamino-1,3,5-triazine with cyanuric acid to react to prepare a precursor of graphite phase carbon nitride; then putting the precursor on the surface of FTO glass and preparing a carbon nitride film by means of a high-temperature calcining method; and finally, putting the carbon nitride film in a magnetic boat and calcining the film in a nitrogen atmosphere by taking sodium hypophosphite as a phosphorus source to obtain the phosphorus-doped graphite phase carbon nitride nano film. By taking FTO conductive glass as a substrate material, the method disclosed by the invention is simple in preparation process and low in cost; the prepared phosphorus-doped graphite phase carbon nitride nano film is good in shape and high in purity, overcomes the defect that a phosphorus-doped graphite phase carbon nitride nano powder material is poor in dispersibility, and is high in photocatalytic activity; and no toxic and harmful substances are generated in the whole preparation process, the environment is not polluted, the human health is not damaged, and the preparation method is safe and environmental-friendly.

Description

technical field [0001] The invention belongs to the technical field of semiconductor nanomaterial preparation, and in particular relates to a method for preparing a phosphorus-doped graphite-phase carbon nitride nanofilm. Background technique [0002] Graphite phase carbon nitride (C 3 N 4 ) As an ancient polymer, it has the advantages of low density, high chemical stability, good biocompatibility, and strong wear resistance. It is used in high-performance wear-resistant coatings, membrane materials, catalysts and catalyst carriers, and metal nitrides. Preparation and other fields have broad application prospects, and have been widely concerned by people for a long time. C 3 N 4 It is an n-type semiconductor material with a band gap of 2.7 eV, and it is also a good photosensitive material with a strong absorption peak at 460nm and good fluorescence properties. Use non-metallic element phosphorus to C 3 N 4 After modification, the maximum absorption peak has an obvious...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/34
CPCC03C17/3435C03C2217/211C03C2217/241C03C2217/281C03C2218/17C03C2218/32
Inventor 卢小泉权晶晶秦冬冬李洋段世芳耿园园贺彩花王秋红
Owner NORTHWEST NORMAL UNIVERSITY
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