A kind of preparation method of nano film
A nano-film and thin-film technology, applied in the field of nano-film preparation, can solve the problem of few nano-film research, and achieve the effects of low cost, high efficiency and low noise
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Embodiment 1
[0026] (1) The purity is analytically pure La(NO 3 ) 3 ·5H 2 O,Co(NO 3 ) 2 4H 2 O, Mn(CH3COO) 2 According to the general formula La 2 CoMnO 6 The raw materials were mixed and dissolved in a solvent with a volume ratio of ethylene glycol methyl ether to ethylene glycol of 6:4 to prepare a mixture of 20ml. Seal the mouth of the beaker with plastic wrap, stir the mixture on a magnetic stirrer at room temperature at 30°C for 500 minutes to form a transparent and clear sol with a concentration of 0.2mol / l, add 1ml of acetylacetone, and let it stand for aging at room temperature for 72 hours.
[0027] (2) The substrate is selected as single crystal Si(100), and the slow speed is 400r / min for 18s; the fast speed is 4000r / min for 50s, spin-coating film deposition on the substrate, and the film baking temperature is 280°C for 2min.
[0028] (3) The initial thin film obtained in step 2 was annealed with RTP, the heating rate was 110°C / s, the annealing time was 210s in an oxygen ...
Embodiment 2
[0032]A preparation method of nano film, it comprises the following steps:
[0033] (1) Mix lanthanum salt, cobalt salt and manganese salt according to the molar ratio of 2:1:1, then pour into the mixed solution of ethylene glycol and methyl ether, then seal and store, and stir the mixture for 500min to form lanthanum salt, The total concentration of cobalt salt and manganese salt is 0.19mol / l to form a transparent and clear sol, which is added with acetylacetone and aged at room temperature for 78 hours;
[0034] (2) Using single crystal Si (111) as the substrate, deposit a thin film on the substrate. The slow speed is 420r / min for 19s, and the fast speed is 3850r / min for 45s. The thin film is spin-coated and deposited on the substrate. The baking temperature 1.3min at 280°C;
[0035] (3) In the RTP annealing atmosphere of the initial substrate film obtained in step 2, the temperature is raised to 780°C at a heating rate of 150°C / s, and the time at 780°C is 170s, and the gas...
Embodiment 3
[0042] A preparation method of nano film, it comprises the following steps:
[0043] (1) Mix lanthanum salt, cobalt salt and manganese salt according to the molar ratio of 2:1:1, then pour into the mixed solution of ethylene glycol and methyl ether, then seal and store, and stir the mixture for 550min to form lanthanum salt, The total concentration of cobalt salt and manganese salt is 0.195mol / l to form a transparent and clear sol, add acetylacetone, and leave it at room temperature for aging for 76 hours;
[0044] (2) Using single crystal Si as the substrate, deposit a thin film on the substrate at a slow speed of 390r / min for 18.5s, and a fast speed of 4100r / min for 52s. The thin film is deposited on the substrate by spin coating and the baking temperature is 285°C Duration 1.5min;
[0045] (3) Heat the initial substrate film obtained in step 2 to an RTP annealing atmosphere at a heating rate of 120 °C / s to 700 °C, at 700 °C for 185 s, and a gas beam of 0.35 L / min;
[0046...
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