Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for improving the optical properties of silica through surface crystallization

A technology of silicon dioxide and optical properties, which is used in devices for coating liquids on surfaces, special surfaces, pretreated surfaces, etc. It can solve the problems of strict equipment requirements, high cost, and difficulty in industrialized production, and achieve low production costs. , The effect of short production cycle and improved light utilization

Inactive Publication Date: 2020-07-17
TSINGHUA UNIV
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In 2007, Xi.J.Q. et al. prepared five layers of nano-microstructure anti-reflection coatings with gradient refractive index distribution on Si wafers by using inclined vapor deposition technology, and achieved very good gradient refractive index broadband anti-reflection. It is hoped that this excellent The technology can be applied to the anti-reflection of crystalline Si solar cells in the future, but this technology has strict requirements on equipment, high cost, and it is difficult to realize industrial production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for improving the optical properties of silica through surface crystallization
  • A method for improving the optical properties of silica through surface crystallization
  • A method for improving the optical properties of silica through surface crystallization

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] The nano-silica sol particles are chemically modified with polyethylene glycol, and the sol is uniformly coated on the silicon wafer. Place the silicon wafer coated with silicon dioxide particles in a crucible and heat-treat in a furnace. The heat-treatment temperature is 1200°C, the atmosphere in the furnace is argon, the gas pressure is 4MPa, the heat-treatment time is 5h, and the heating rate of the heat-treatment is 10 °C / min, the cooling rate is 10 °C / min, and a uniform silicon dioxide film layer crystallized on the particle surface is obtained.

Embodiment 2

[0034] The nano-silica sol particles are chemically modified with polyethylene glycol, and the sol is uniformly coated on the silicon wafer. Place the silicon wafer coated with silicon dioxide particles in a crucible and heat-treat in a furnace. The heat-treatment temperature is 1200°C, the atmosphere in the furnace is argon, the gas pressure is 4MPa, the heat-treatment time is 1h, and the heating rate of heat-treatment is 10 °C / min, the cooling rate is 10 °C / min, and a uniform silicon dioxide film layer crystallized on the particle surface is obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
Login to View More

Abstract

A method for improving the silicon dioxide optical property through surface crystallization comprises following steps: firstly, a silicon wafer is evenly coated with chemically-modified colloidal silica sol particles; secondly, the silicon wafer, coated with the silicon dioxide, in the first step is subject to high-pressure inert gas heat treatment in a furnace, the heat treatment temperature ranges from 100 DEG C to 1800 DEG C, the gas pressure ranges from 0.1 MPa to 6 MPa, the heat treatment time ranges from 1 h to 10 h, and a uniform silicon dioxide film layer with the particle surface partly crystallized is obtained. The optical property of the silicon dioxide film layer subject to high-pressure inert atmosphere rapid temperature increasing and decreasing heat treatment is improved, the refractive index is improved, and is continuously adjusted, the film layer can serve as an ideal material of a solar cell gradient refractive index antireflection layer, and the film layer is simple in preparing process, low in raw material cost and beneficial to large-scale industrial production.

Description

technical field [0001] The invention belongs to the field of inorganic non-metallic materials, and specifically relates to a method for improving the optical properties of a silicon dioxide film layer through surface crystallization, in particular to a process for promoting the surface crystallization of silicon dioxide particles through rapid heating and cooling in a high-pressure inert atmosphere. Background technique [0002] Solar energy is by far the cleanest and most sustainable energy source. In 2015, the newly installed capacity of photovoltaics in the world reached 36GW, and it will continue to increase in the next few years. By then, photovoltaic power generation will largely solve the world's energy shortage problem. [0003] For high-efficiency solar cells, the light absorption process is the key first step in photoelectric conversion, which directly affects the efficiency of photoelectric conversion. Therefore, increasing light absorption and reducing light ref...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B05D5/06B05D3/04H01L31/0216
CPCB05D3/0473B05D5/063B05D2203/30H01L31/02168Y02E10/50
Inventor 谢志鹏孙思源葛一瑶田兆波张杰
Owner TSINGHUA UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products