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High density silicon carbide ceramic and pressureless sintering method thereof

A technology of silicon carbide ceramics and sintering method, applied in the field of silicon carbide ceramics, can solve the problems of low density and high porosity of silicon carbide ceramics, which cannot meet industrial production, and achieve the effects of low porosity, optimized sintering conditions, and high density.

Inactive Publication Date: 2017-09-22
WUHU QIANKAI MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a high-density silicon carbide ceramic and its preparation method, which solves the problem that the characteristics of silicon carbide ceramics make it difficult to sinter and compact under normal pressure, and the prepared silicon carbide ceramics have lower density and higher porosity , unable to meet the needs of industrial production

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Mix 100g of silicon carbide, 20g of epoxy resin, 5g of bentonite, 5g of diatomaceous earth, 1g of boron carbide, 2g of glass fiber, 0.5g of carbon black, 0.5g of petroleum coke and 200g of absolute ethanol before ball milling (the speed of ball milling is 220r / min, ball milling time is 1h), to obtain slurry M; the slurry M is dried (the drying temperature is 45°C, and the drying time is 2h), granulated and stale (the stale time is 1h) to obtain powder N; Mix 100g of powder N and 8g of sintering aids, pressurize and sinter (sinter in a nitrogen atmosphere, the sintering temperature is 1300°C, and the sintering time is 30min), to obtain high-density silicon carbide ceramic A1; Among them, the pressure molding adopts the method of three-stage pressure molding. The conditions for the first stage of pressure include at least: the pressure is 30MPa, and the holding time is 30s; the conditions for the second stage of pressure include at least: the pressure is 80MPa, and the ho...

Embodiment 2

[0029] Mix 100g of silicon carbide, 40g of epoxy resin, 10g of bentonite, 10g of diatomaceous earth, 5g of boron carbide, 4g of glass fiber, 2.5g of carbon black, 1.5g of petroleum coke and 300g of absolute ethanol before ball milling (the speed of ball milling is 250r / min, the time of ball milling is 2h), to obtain the slurry M; the slurry M is dried (the drying temperature is 55°C, and the drying time is 4h), granulated and stale (the stale time is 2h) to obtain the powder N; Mix 100g of powder N and 12g of sintering aids, pressurize and sinter (sinter in an argon atmosphere, the sintering temperature is 1500°C, and the sintering time is 60min), to obtain high-density silicon carbide ceramic A2 ; Among them, the pressure molding adopts the method of three-stage pressure molding. The conditions for the first stage of pressure include at least: the pressure is 50MPa, and the holding time is 40s; the conditions for the second stage of pressure include at least: the pressure is ...

Embodiment 3

[0031] Mix 100g of silicon carbide, 30g of epoxy resin, 8g of bentonite, 7g of diatomaceous earth, 3g of boron carbide, 3g of glass fiber, 1.5g of carbon black, 0.8g of petroleum coke and 250g of absolute ethanol before ball milling (the speed of ball milling is 230r / min, the ball milling time is 1.5h), to obtain the slurry M; after drying the slurry M (the drying temperature is 50°C, the drying time is 3h), granulation and aging (the aging time is 1.5h) to obtain Powder N; mix 100g of powder N and 10g of sintering aids, pressurize and sinter (sinter in an argon atmosphere, the sintering temperature is 1400°C, and the sintering time is 45min) to obtain high-density silicon carbide Ceramic A3; Among them, the pressure molding adopts the method of three-stage pressure molding. The conditions for the first stage of pressure include at least: the pressure is 40MPa, and the pressure holding time is 35s; the conditions for the second stage of pressure include at least: the pressure ...

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Abstract

The invention discloses a high density silicon carbide ceramic and a pressureless sintering method thereof. The pressureless sintering method comprises mixing silicon carbide, epoxy resin, bentonite, diatomite, boron carbide, glass fibers, carbon black, petroleum coke and anhydrous ethanol, carrying out ball milling to obtain slurry M, drying the slurry M, carrying out granulation and aging to obtain powder N, mixing the powder N and a sintering aid, and carrying out pressing molding and sintering to obtain the high density silicon carbide ceramic. The method solves the problem that silicon carbide ceramic is difficult to form a compact structure after atmospheric pressure sintering because of silicon carbide ceramic characteristics and thus the silicon carbide ceramic has low density and high porosity and cannot satisfy the needs of industrial production.

Description

technical field [0001] The invention relates to the field of silicon carbide ceramics, in particular to a high-density silicon carbide ceramic and a preparation method thereof. Background technique [0002] With the development of science and technology, especially the high development of energy and space technology, it is often required that materials must have superior properties such as high temperature resistance, corrosion resistance, and wear resistance before they can be used in harsh working environments. Due to the excellent characteristics of strong oxidation resistance, good wear resistance, high hardness, good thermal stability, high temperature strength, small thermal expansion coefficient, high thermal conductivity, thermal shock resistance and chemical corrosion resistance, special ceramic materials have become cutting-edge ceramic materials. An important part of science and is generally valued. Silicon carbide ceramics is a new material that has only been ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/82C04B35/565C04B35/63C04B35/634C04B35/636
CPCC04B35/565C04B35/6303C04B35/63452C04B35/6365C04B35/82C04B2235/3418C04B2235/349C04B2235/3821C04B2235/422C04B2235/424C04B2235/658
Inventor 彭波
Owner WUHU QIANKAI MATERIAL TECH CO LTD
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