Etching liquid for conductive glass, and preparation method of etching liquid

Abstract

The invention discloses etching liquid for conductive glass, and a preparation method of the etching liquid. The etching liquid comprises the following raw materials in parts by weight: 30 to 50 parts of hydrofluoric acid, 20 to 30 parts of phosphoric acid, 5 to 10 parts of calcium fluoride, 1 to 6 parts of ammonium sulfate, 1 to 6 parts of magnesium sulfate, 5 to 10 parts of potassium phosphate, 1 to 6 parts of potassium bifluoride, 6 to 12 parts of sodium silicate, 5 to 10 parts of sodium fluoborate, 1 to 5 parts of agar, 1 to 6 parts of sodium alginate, 1 to 3 parts of nanosilicon dioxide, 0.2 to 0.6 part of an anti-freezing agent, 0.01 to 0.05 part of an anionic surfactant, 40 to 60 parts of a sulfuric acid solution and 120 to 160 parts of deionized water. The etching liquid provided by the invention can achieve the technical effect of removing impurities from the surface of a substrate by dissolving and etching the impurities on the surface of the conductive glass substrate, so that the problem that the yield of the substrates is reduced due to granular attachment is effectively solved.

Description

technical field [0001] The invention relates to the technical field of etching solution, in particular to an etching solution for conductive glass and a preparation method thereof. Background technique [0002] In the manufacturing process of flat panel displays, conductive glass needs to be used. As more and more manufacturers adopt the method of thinning the conductive glass, the etching of the conductive glass becomes an important issue. There are two commonly used thinning methods, one is physical method, that is, polishing and grinding with polishing powder, this method takes a long time to thin, the precision is not easy to control, and the product yield is low; the other method is to use etching solution The chemical etching method, which has short thinning time, small investment in equipment, and simple composition of thinning liquid, has gradually become the mainstream technical method. [0003] The etching rate of the substrate in the prior art is relatively fast...

AI Technical Summary

Problems solved by technology

There are two commonly used thinning methods, one is physical method, that is, polishing and grinding with polishing powder, this method takes a long time to thin, the precision is not easy to control, and the product yield is low; the other method is to use etching solution The chemical etching method, which has short thinning time, small equipment investment, and simple composition of thinning liquid, has gradually become the mainstream technical method

[0003] The etching rate of the substrate in the prior art is relatively fast, and the amount of etching is not easy to control. Some cannot effectively dissolve silicate, and some will produce strong ionization, resulting in difficult control of the etching rate. Sometimes the etching solution will produce Lots of bubbles