Method for manufacturing gallium nitride field effect transistor

Abstract

The embodiment of the invention provides a manufacturing method of the gallium nitride field effect transistor, the method comprises the following steps: firstly, manufacturing an ohmic contact electrode and a grid electrode of a transistor on a first region of a device, wherein the device comprises a substrate and a GaN buffer layer and an AlGaN barrier layer which are sequentially grown on the surface of the substrate; depositing a first PETEOS oxide layer on the surface of the device; etching the device on a second region of the device until a part of the substrate is etched off to form a through hole, wherein the intersection of the second area and the first area is empty; and finally depositing a metal layer on the surface of the device, and etching the metal layer to form the gallium nitride field effect transistor. The electric field between the drain electrode and the grid electrode is relieved, the interconnection resistance and the parasitic inductance of the source electrode are reduced, and the performance of the gallium nitride field effect transistor is improved.

Description

technical field [0001] Embodiments of the present invention relate to the technical field of manufacturing technology of semiconductor devices, in particular to a method for manufacturing GaN field effect transistors. Background technique [0002] With the increasing demand for power conversion circuits, power devices with characteristics such as low power consumption and high speed have become the focus of attention in this field. Gallium Nitride (GaN) is the third generation of wide bandgap semiconductor material, due to its large bandgap, high electron saturation rate, high breakdown electric field, high thermal conductivity, corrosion resistance and radiation resistance, it can be used in high voltage, high It has strong advantages in high frequency, high temperature, high power and anti-irradiation environmental conditions, and is considered to be the best material for short-wave optoelectronic devices and high-voltage, high-frequency and high-power devices. Moreover, ...

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Problems solved by technology

[0003] However, for the existing GaN field effect transistor manufacturing process, the GaN field effect transistor manufactured by it still has problems such as strong electric field strength between the drain and the gate, and high interconnection resistance and parasitic inductance of the source. , these problems seriously affect the performance of GaN FETs

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