Cleaning method for indium phosphide polycrystalline material

Abstract

The invention discloses a cleaning method for an indium phosphide polycrystalline material. The method comprises the following steps that 1, an indium phosphide polycrystalline ingot is put into ethyl alcohol to be soaked, the soaked indium phosphide polycrystalline ingot is put into acetone of 60 DEG C to be soaked for 3-10 min, deionized water is used for washing, or the black adhesive on the surface is removed through brushing with a small brush, the treated indium phosphide polycrystalline ingot is put into acetic acid of 70 DEG C to be soaked to remove the adhesive, all marks are removed with #100 silicon carbide paper, edges of the material are rounded, and a crude product is obtained; 2, the crude product obtained in the step 1 is put into a mixed solvent composed of ammonium hydroxide, hydrogen peroxide and deionized water to be soaked for 2 hours, taken out and then washed with the deionized water, ultrasonic cleaning is conducted for 20 min, and the treated crude product is put into an open vessel containing methyl alcohol to be cleaned, and then taken out to be aired to obtain the cleaned indium phosphide polycrystalline material. Accordingly, impurities such as iron, magnesium, calcium, copper, colloid and paint on the surface of the indium phosphide polycrystalline material can be removed within 15 h. The purity of the obtained product is that the cleanliness of heavy metal cleaning is smaller than or equal to 10 PPM.

Description

Technical field: [0001] The invention relates to semiconductor materials, in particular to a cleaning method for indium phosphide polycrystalline materials. Background technique: [0002] Indium phosphide (InP) crystal is an important compound semiconductor material. Compared with gallium arsenide (GaAs), its advantages mainly lie in high saturation electric field drift speed, good thermal conductivity and strong radiation resistance, so phosphorus Indium chloride wafers are usually used in the manufacture of new microelectronics and optoelectronic components. In the military, it is used in the fields of electronic countermeasures, electronic warfare, precision guidance, early warning detection, satellite communication, and radar. Civil applications are wireless communication, optical communication, optical information processing, industrial automatic control, medical equipment, laser technology, computer, electronic communication, television broadcasting, infrared technolo...

AI Technical Summary

Problems solved by technology

However, in the air, the surface of indium phosphide (InP) material is easily oxidized and contaminated by carbon, etc., which directly affect the life and other characteristics of devices made of it.