A method for preparing tubular target material

Abstract

A method for preparing a tubular target material, the method comprises: selecting a stainless steel backing tube that has been cleaned and roughened; preparing (copper indium gallium) alloy powder by vacuum air atomization in an oxygen-containing atmosphere; In the atmosphere, a transition layer is sprayed on the backing tube by methods such as plasma spraying or cold spraying to obtain a stainless steel backing tube comprising a transition layer; in an atmospheric atmosphere, a plasma spraying method is used to coat the transition layer. The surface is sprayed with a target layer. The method of the present application prepares the tubular target material in the atmospheric atmosphere, which reduces the production cost, simplifies the production process, and the prepared tubular target material has lower oxygen content and better performance.

Description

technical field [0001] This application relates to but not limited to the field of solar energy application materials, in particular to but not limited to a method for preparing a tubular target. Background technique [0002] Target preparation technologies mainly include smelting casting method, low temperature aerodynamic spraying and atmosphere protection plasma spraying, etc. CN102286724A discloses a technology for manufacturing CIG (copper indium gallium) targets by vacuum smelting and casting; CN201310172489.6 provides a method for preparing CIG targets by low-pressure plasma spraying under vacuum or protective atmosphere, but due to the need to It is carried out in a vacuum chamber or a protective atmosphere, the equipment is expensive, the process is complicated, and the particle size of the spraying powder is required to be 2200-2600 mesh. The powder is very fine and difficult to prepare, resulting in high production costs. CN201310221657.6 provides a layer-by-laye...

AI Technical Summary

Problems solved by technology

CN102286724A discloses a technology for manufacturing CIG (copper indium gallium) targets by vacuum melting and casting; CN201310172489.6 provides a method for preparing CIG targets by low-pressure plasma spraying under vacuum or protective atmosphere, but due to the need to It is carried out in a vacuum chamber or a protective atmosphere, the equipment is expensive, the process is complicated, and the particle size of the spraying powder is required to be 2200-2600 mesh. The powder is very fine and difficult to prepare, resulting in high production costs.

However, since the melting point of indium is 156°C and the melting point of gallium is 29°C, the melting point is very low. In the powder alloy phase, there are mainly copper-gallium intermetallic compound and indium-based alloy phase, and because the melting point of indium is very low, resulting in The alloy powder prepared by the method has serious agglomeration and adhesion phenomena during the cooling process and at room temperature, and a large number of small satellite spheroids adhere to the surface of the particles, which not only makes the yield of the alloy powder too low, but also leads to poor fluidity of the alloy powder, which is difficult to meet The production process requires the production of high-performance targets, and poor powder feeding during subsequent use often leads to blockage of the thermal spraying powder feeding system

In the same way, the above-mentioned problems also exist for the preparation of other alloy powders with a very wide solid-liquid coexistence temperature range and one of the metals has a very low melting point.

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