Method for growing magnetic two-dimensional VSe2 thin film at room temperature through chemical vapor deposition

A technology of chemical vapor deposition and growth method, which is applied in the field of chemical vapor deposition (CVD) growth of magnetic two-dimensional VSe2 thin film at room temperature, which can solve the problems of complex steps and achieve the effects of simplified synthesis steps, easy adjustment, and realization of size and thickness

Active Publication Date: 2018-01-09
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Reported VSe 2 The CVD preparation method of thin film materials needs to use highly flammable tert-butyllithium to synthesize di-tert-butylselenium precursor of selenium element, and the steps are complicated, and the product contains more impurities such as oxygen

Method used

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  • Method for growing magnetic two-dimensional VSe2 thin film at room temperature through chemical vapor deposition
  • Method for growing magnetic two-dimensional VSe2 thin film at room temperature through chemical vapor deposition
  • Method for growing magnetic two-dimensional VSe2 thin film at room temperature through chemical vapor deposition

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Experimental program
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Embodiment 1

[0034] Room temperature magnetic two-dimensional VSe 2 thin film CVD growth

[0035] Step 1: Substrate cutting

[0036] Carve the polished sapphire substrate into a rectangle of 2 cm × 1 cm with a diamond knife for pen test.

[0037] Step 2: substrate cleaning.

[0038] (1) Put the polished side of the sapphire substrate 5 into a beaker filled with acetone, ethanol and deionized water to clean in sequence. Ultrasound in the device for 20min;

[0039] (2) Dry the cleaned sapphire substrate 5 with a nitrogen gun.

[0040] Step 3: Weighing the mass of the Se precursor

[0041] (1) Put a 3 cm long quartz boat 3 into the balance and peel it back to zero, put selenium powder 4 with a purity of 99.99% into the quartz boat 3 with a medicine spoon, and weigh 300 mg with an electronic balance;

[0042] (2) Put the quartz boat 3 filled with Se powder into the center of the external heating belt located upstream of the CVD tube furnace 1, and the distance between the center of the h...

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Abstract

The invention discloses a method for growing a magnetic two-dimensional VSe2 thin film at room temperature through chemical vapor deposition. The method comprises the following steps: putting VCl3 which is uniformly distributed on a substrate in the center of a tube furnace, and putting 200-500 mg of Se powder at an upstream heating ring of the tube furnace; after the tube furnace is subjected togas scrubbing by utilizing an inert gas, heating VCl3 section by section to 500-800 DEG C, carrying out heat preservation for 10-30 min, stopping the heating operation, and carrying out furnace cooling; and when the temperature of the tube furnace is increased to 300 DEG C, heating upstream Se powder to 300 DEG C to gasify Se, wherein gasified Se is taken by an inert carrier gas to the center of the tube furnace and reacts with VCl3, and the VSe2 thin film is grown on the substrate. According to the method disclosed by the invention, 30-100 sccm of an inert protective gas is injected in the whole process; through the selection of an easy-to-sublimate precursor as well as the optimization of a method for distributing and placing the easy-to-sublimate precursor on the substrate, the high-quality and repeatable preparation of the VSe2 thin film can be achieved; and the VSe2 thin film preparation efficiency can be improved.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, in particular to a room temperature magnetic two-dimensional VSe 2 Thin film chemical vapor deposition (CVD) growth method. Background technique [0002] Single-layer two-dimensional materials represented by graphene are single-layer nanomaterials composed of one layer of bonded atoms (such as graphene) or multiple layers of bonded atoms (such as chalcogen transition compounds). Two-dimensional thin film materials refer to single-layer two-dimensional materials or thin-film materials formed by stacking multiple single-layer two-dimensional materials, and the single-layer two-dimensional materials are combined by Van der Waals force. VSe 2 Thin film materials have unique magnetic, electrical and chemical catalytic properties among two-dimensional materials, and are expected to be applied in new electronic devices and new energy, such as high-density magnetic memory and chemical ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/30C23C16/52
Inventor 吴幸王超伦
Owner EAST CHINA NORMAL UNIV
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