Inorganic oxide quantum dot light emitting diode

Abstract

The invention provides an inorganic oxide quantum dot light emitting diode and a preparation method therefor. The inorganic oxide quantum dot light emitting diode comprises a positive electrode, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a negative electrode which are arranged adjacently, wherein the hole transport layer and the electron transport layer are both prepared from an inorganic semiconductor material; and the oxygen ion vacancy quantity in the inorganic semiconductor material of the hole transport layer can be controlled by regulatingthe annealing temperature, and a small amount of oxygen ion vacancy has an effect similar to N type doping, so that hole injection and transportation can be greatly improved. The quantum dot light emitting diode can perform long-term stable operation, so that hole and electron injection and transport rate in the device can be improved, particularly the hole injection efficiency; and electron andhole quantity can be balanced, and the external quantum efficiency of the quantum dot light emitting diode is improved.

Description

technical field [0001] The invention relates to the field of quantum dot light emitting diodes, in particular to an inorganic oxide quantum dot light emitting diode and a preparation method thereof. Background technique [0002] PEDOT:PSS is often used as a hole injection layer for electroluminescent devices or organic solar cells. It has excellent conductivity and can be spin-coated, printed or ink-jetted to form a conductive film in the form of an aqueous solution. However, the pH of the PEDOT:PSS aqueous solution is generally around 1, which is easy to cause corrosion on the surface of the commonly used ITO transparent electrode, and the hygroscopicity of the PEDOT:PSS film will seriously affect the working life of the device. Some transition metal oxides are good P-type semiconductors and can be used as hole injection layers instead of PEDOT:PSS in devices. Generally speaking, these inorganic semiconductor metal oxides have good stability, which can stabilize the device...

AI Technical Summary

Problems solved by technology

[0003] However, due to the different carrier transport efficiencies of the electron and hole transport layers, the number of electrons in quantum dot light-emitting diodes is often 2 to 3 orders of magnitude of the number of holes, resulting in the accumulation of electrons in the quantum dot light-emitting layer, too much The electrons will cause quantum dot charging and non-radiative recombination

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