Inorganic oxide quantum dot light emitting diode

A technology of quantum dot luminescence and inorganic oxides, which is applied in the manufacture of electrical components, electrical solid devices, semiconductor/solid devices, etc., can solve the problems of non-radiative recombination, quantum dot charging, etc., and the method is simple, easy to process into films, The effect of improving the external quantum efficiency
CN107611273AInactive Publication Date: 2018-01-19NANCHANG HANGKONG UNIVERSITY
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NANCHANG HANGKONG UNIVERSITY
Publication Date
2018-01-19
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention provides an inorganic oxide quantum dot light emitting diode and a preparation method therefor. The inorganic oxide quantum dot light emitting diode comprises a positive electrode, a hole transport layer, a quantum dot light emitting layer, an electron transport layer and a negative electrode which are arranged adjacently, wherein the hole transport layer and the electron transport layer are both prepared from an inorganic semiconductor material; and the oxygen ion vacancy quantity in the inorganic semiconductor material of the hole transport layer can be controlled by regulatingthe annealing temperature, and a small amount of oxygen ion vacancy has an effect similar to N type doping, so that hole injection and transportation can be greatly improved. The quantum dot light emitting diode can perform long-term stable operation, so that hole and electron injection and transport rate in the device can be improved, particularly the hole injection efficiency; and electron andhole quantity can be balanced, and the external quantum efficiency of the quantum dot light emitting diode is improved.
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Description

technical field

[0001] The invention relates to the field of quantum dot light emitting diodes, in particular to an inorganic oxide quantum dot light emitting diode and a preparation method thereof. Background technique

[0002] PEDOT:PSS is often used as a hole injection layer for electroluminescent devices or organic solar cells. It has excellent conductivity and can be spin-coated, printed or ink-jetted to form a conductive film in the form of an aqueous solution. However, the pH of the PEDOT:PSS aqueous solution is generally around 1, which is easy to cause corrosion on the surface of the commonly used ITO transparent electrode, and the hygroscopicity of the PEDOT:PSS film will seriously affect the working life of the device. Some transition metal oxides are good P-type semiconductors and can be used as hole injection layers instead of PEDOT:PSS in devices. Generally speaking, these inorganic semiconductor metal oxides have good stability, which can stabilize the device...

Claims

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