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Electroabsorption modulated laser and its preparation method

An electro-absorption modulator and electro-absorption modulation technology are used in lasers, devices for controlling laser output parameters, laser parts and other directions, which can solve problems such as low production efficiency and difficult monolithic photonic integration, and achieve the effect of simplifying the production process.

Active Publication Date: 2020-07-28
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, not only the production efficiency is low, but also, because the EML has been cleaved from the substrate before coating, the EML is already a separate discrete device after fabrication, and it is difficult to carry out further monolithic photonic integration.
The interference problem of FP mode is especially serious for surface grating EML with relatively weak longitudinal mode selection ability.

Method used

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  • Electroabsorption modulated laser and its preparation method
  • Electroabsorption modulated laser and its preparation method

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preparation example Construction

[0045] Based on this, if figure 2 As shown, the preparation method of the electroabsorption modulated laser comprises the following steps:

[0046] S1: Epitaxial growth is performed.

[0047] S2: Fabricate waveguides, surface gratings and end faces.

[0048] S3: filling the insulating layer and making the top electrode.

[0049] S4: Perform end surface coating.

[0050] S5: Thinning the substrate, fabricating the back electrode and cleavage.

[0051] Among them, the electroabsorption modulation laser only needs one epitaxy in the whole preparation process. The surface grating is realized by etching the ohmic layer and the upper confinement layer on both sides of the waveguide of the distributed feedback semiconductor laser, and filling the insulator material. The electroabsorption is formed by etching. Modulate both end faces of the laser. In addition, without cleaving the substrate, the two end faces of the electro-absorption modulation laser are optically coated.

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Embodiment 1

[0055] In this embodiment, a method for preparing an InGaAsP / InP EML with a wavelength of 1550 nm and based on a surface grating and an etched end face is used as an example for illustration. The method specifically includes the following steps:

[0056] 1. Epitaxial growth. The epitaxial structure of a typical 1550nm InGaAsP / InP FP cavity semiconductor laser is epitaxially grown on a highly doped n-type InP substrate. Including the following epitaxial layer: n-type InP buffer layer (thickness 160nm, doping concentration about 1×10 18 cm -3 ), non-doped lattice matching InGaAsP lower waveguide layer (thickness 80nm, photofluorescence wavelength 1150nm), InGaAsP active layer multiple quantum wells (10 pairs of quantum wells, well width 10nm, 0.7% compressive strain, photofluorescence wavelength 1550nm, barrier Width 10nm, lattice matching material, optical fluorescence wavelength 1200nm), non-doped lattice matching InGaAsP upper waveguide layer (thickness 100nm, optical fluor...

Embodiment 2

[0063] In this embodiment, a method for preparing an AlGaInAs / InP EML with a wavelength of 1310 nm and based on a surface grating and an etched end face is described as an example. The method specifically includes the following steps:

[0064] 1. Epitaxial growth. The epitaxial structure of a typical 1310nm AlGaInAs / InP FP cavity semiconductor laser is epitaxially grown on a highly doped n-type InP substrate. The structure generally includes the following epitaxial layer: n-type InP buffer layer (thickness 500nm, doping concentration about 1×10 18 cm -3 ), non-doped lattice-matched InGaAsP lower waveguide layer (thickness 100nm, optical fluorescence wavelength 1050nm), non-doped strained AlGaInAs multi-quantum well active layer (10 periods, 1% compressive strain well, thickness 6nm; lattice-matched barrier , thickness 10nm, photoluminescence wavelength 1270nm), non-doped lattice matching InGaAsP upper waveguide layer (thickness 150nm, photofluorescence wavelength 1050nm), p-...

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Abstract

The invention discloses an electroabsorption modulated laser and a preparation method thereof. The electroabsorption modulated laser consists of a distributed feedback (DFB) laser and electro absorption (EA) which are integrated on the same substrate, and the key structure comprises a grating, a waveguide and an output light end face. The electroabsorption modulated laser is characterized in thatthe grating of the DFB laser is a surface grating, especially a laterally-coupled surface grating, is positioned on both sides of an ohm contact layer of a stripped waveguide and an upper limit layerof the waveguide of the electroabsorption modulated laser, and extends downwards from the surface of an epitaxial wafer to an upper surface of a waveguide core layer; and the output light end face isan end face which is formed by etching and is vertical to the surface of the epitaxial wafer, and end face plating can be performed without cleavage. The electroabsorption modulated laser has the advantages that end face plating of the electroabsorption modulated laser can be performed without cleavage of a substrate; a manufacturing process is simplified greatly; and assembly of the electroabsorption modulated laser and other optoelectronic devices on the same substrate is facilitated.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to an electroabsorption modulation laser and a preparation method thereof. Background technique [0002] Electroabsorption modulated laser (EML) is an important light source for optical communication, and is widely used in optical fiber communication backbone network, metropolitan area network, access network and inter-chip interconnection communication. EML is a photonic integrated device composed of distributed feedback (Distributed Feedback Laser, DFB) semiconductor laser and electro absorption (Electro Absorption, EA) modulator. In EML, the grating is distributed in the entire waveguide of the DFB laser, and the longitudinal mode is selected by the frequency-selective characteristics of the grating, and the light wave obtains gain and feedback at the same time; coupled with the limitation of the transverse mode structure, the single longitudinal mode...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/06H01S5/0625H01S5/12
Inventor 王健罗毅孙长征熊兵
Owner TSINGHUA UNIV