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A graphene-modified au/sno2 structure ammonia sensor and preparation method thereof

An ammonia sensor and graphene technology, applied in the field of sensors, can solve the problems of complex preparation process, poor ammonia response, high working temperature, etc., and achieve the effect of simple process operation, high controllability and low working temperature

Active Publication Date: 2019-06-04
SHANDONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Aiming at problems such as low stability, low sensitivity, poor responsiveness to ammonia, high operating temperature, high production cost, and complicated preparation process in the above-mentioned prior art, the purpose of the present invention is to provide a graphene-modified Au / SnO 2 An ammonia gas sensor with a core-shell structure and a preparation method thereof. The ammonia gas sensor prepared by this method can realize highly sensitive detection of ammonia gas at near room temperature (40° C.), fast response, and high stability; the present invention The preparation method in the invention is simple, controllable, and the production cost is low, which can realize large-scale production and has great application prospects

Method used

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  • A graphene-modified au/sno2 structure ammonia sensor and preparation method thereof
  • A graphene-modified au/sno2 structure ammonia sensor and preparation method thereof
  • A graphene-modified au/sno2 structure ammonia sensor and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0065] Step 1), in SiO 2 (500nm) / Si substrate, using magnetron sputtering technology to deposit a gold film with a thickness of about 100nm, and then annealing at a temperature of 900°C for 10min to form Au particles with uniform overall size and controllable distribution. carried out in an argon atmosphere. By controlling the thickness of the gold film, the size of the metal nanoparticles formed after annealing can be effectively controlled to obtain optimal device parameters. If the gold film is too thick to form a continuous film, it is not conducive to the realization of the originally designed core-shell structure, which increases the stability and reliability of the device.

[0066] Step 2), configure HF:NH 4 F is an etching solution with a volume ratio of 1:6, put the sample in step 1) into the etching solution, etch the exposed silicon dioxide layer, the etching depth is 150nm, and clean it with a standard cleaning process after etching. The optimization of annealin...

Embodiment 2

[0074] Step 1), in SiO 2 (500nm) / Si substrate, using magnetron sputtering technology to deposit a gold film with a thickness of about 50nm, and then annealing at a temperature of 950°C for 30min to form Au particles with uniform overall size and controllable distribution. carried out in an argon atmosphere.

[0075] Step 2), configure HF:NH 4 F is an etching solution with a volume ratio of 1:8, put the sample in step 1) into the etching solution, and directional etch the exposed silicon dioxide layer with an etching depth of 100 nm, and clean it with a standard cleaning process after etching.

[0076] Step 3), using magnetron sputtering technology, deposit tin metal on the sample with Au particles distributed in step 2), the deposition time is 30s, forming tin metal covering the entire sample, and then annealing at 800°C for 40min to oxidize the tin Tin dioxide is generated to form a cover of tin dioxide nanoparticles on the gold particles to form a core-shell structure, and...

Embodiment 3

[0082] Step 1), in SiO 2(500nm) / Si substrate, using magnetron sputtering technology to deposit a gold film with a thickness of about 300nm, and then annealing at a temperature of 1000°C for 20min to form Au particles with uniform overall size and controllable distribution. carried out in an argon atmosphere.

[0083] Step 2), configure HF:NH 4 F is an etching solution with a volume ratio of 1:10, put the sample in step 1) into the etching solution, etch the exposed silicon dioxide layer, the etching depth is 300nm, and clean it with a standard cleaning process after etching.

[0084] Step 3), using magnetron sputtering technology, deposit tin metal on the sample with Au particles distributed in step 2), the deposition time is 3 minutes, forming tin metal covering the entire sample, and then annealing at 500 ° C for 60 minutes to oxidize the tin Tin dioxide is generated to form a cover of tin dioxide nanoparticles on the gold particles to form a core-shell structure, and the ...

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Abstract

The invention relates to an ammonia gas sensor of an Au / SnO2 structure modified by graphene and its preparation method. The technical scheme applied in the invention includes steps of (1), manufacturing an Au / SnO2 type nuclear shell composite structure modified by reduced oxidized graphene on SiO2 / Si substrate; (2), then applying a standard photolithography technique and a metal deposition technique to deposit Au electrode; manufacturing the nuclear shell composite structure to be a metal electrode; forming preparation of a gas sensitive device unit and an array; (3), finally realizing the surface combination of a sensitive layer and a metal electrode, and realizing the preparation of the ammonia gas sensor. The ammonia gas sensor prepared by the method can realize the high-sensitive detection of ammonia gas under almost room temperature (40 DEG C); meanwhile the sensor has good stability and solves the problems that the ammonia gas sensor is low in reliability and sensitivity, high inproduction cost, poor in ammonia gas response stability, and high in working temperature; the preparation method is simple and controllable, the production cost is low; therefore, the ammonia gas sensor is easy to produce on a large scale and extremely promising.

Description

technical field [0001] The invention belongs to the technical field of sensors, in particular to a graphene-modified Au / SnO 2 Structured ammonia sensor and its preparation method. Background technique [0002] Ammonia is a colorless, poisonous gas with a pungent, foul-smelling widespread presence in industrial applications. For example, in a coal-fired power plant, in order to remove the nitrogen oxides in the coal-fired flue gas, a large amount of ammonia is sprayed for off-stock treatment, resulting in a large amount of ammonia leakage, which causes serious pollution to the environment. Not only that, ammonia can also be harmful to humans. Therefore, it is of great significance to accurately detect the concentration of ammonia in the air. [0003] Since the discovery of two-dimensional graphene in 2004, its excellent physical and chemical properties and its derivatives have the advantages of semiconductor properties, and it is expected to become the preferred material fo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12
Inventor 慈立杰彭瑞芹陈靖桦张琳聂祥坤李德平翟伟
Owner SHANDONG UNIV
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