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Transverse PiN-structure photoelectric detector

A photodetector, lateral technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of high price, poor thermal conductivity and mechanical properties, poor Si process compatibility, etc., to reduce the interface defect density and low thermal budget. , good contact effect

Inactive Publication Date: 2018-02-02
XIAN CREATION KEJI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It has the advantages of high detector quantum efficiency, small dark current and so on, and has entered the stage of industrialization, but its disadvantages such as high price, poor thermal conductivity and mechanical properties, and poor compatibility with existing mature Si processes limit its application in the industry. Application of Si-based optoelectronic integration technology

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  • Transverse PiN-structure photoelectric detector

Examples

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Embodiment 1

[0026] See figure 1 , figure 1 A schematic structural diagram of a photodetector with a lateral PiN structure provided by an embodiment of the present invention. The photodetector comprises: an SOI substrate 11 and a crystallized Ge layer 12; wherein,

[0027] The SOI substrate 11 includes a Si substrate layer 110, SiO 2 layer 120 and a Si layer, the Si layer includes an N-type doped region 111, an i-type region 112 and a P-type doped region 113 arranged in sequence in the horizontal direction, and the crystallized Ge layer 12 is arranged on the surface of the i-type region 112 superior.

[0028] The epitaxial Ge semiconductor material on the Si substrate is cheap and fully compatible with the existing Si process, and the direct bandgap of the Ge material is about 0.67eV, which has good response characteristics to the optical signal of the C-band 1528-1560nm in optical communication . Moreover, as a new type of light detection structure, a lateral PiN structure photodetec...

Embodiment 2

[0041] Please also see Figure 2a-Figure 2j , Figure 2a-Figure 2j It is a schematic diagram of the fabrication process of a lateral PiN structure photodetector provided by the embodiment of the present invention. In this embodiment, on the basis of the above-mentioned embodiments, the preparation method of the lateral PiN structure photodetector of the present invention is described in detail as follows:

[0042] S101. Substrate selection. Such as Figure 2a As shown, the single crystal silicon Si substrate 001 is selected as the initial material;

[0043] S102, preparing an SOI substrate. Such as Figure 2b As shown, the selected O+ dosage is 1.8×10 18 cm -3 Oxygen injection isolation is performed, followed by high temperature annealing to form SiO with a thickness of 1 μm 2 SOI substrate with layer 002 and 300 nm thick Si layer 003 .

[0044] S103, P-type ion implantation. Such as Figure 2c As shown, deposit a 200nm thick first SiO 2Protective layer 004, select...

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Abstract

The invention relates to a transverse PiN-structure photoelectric detector. The transverse PiN-structure photoelectric detector comprises a silicon-on-insulator (SOI) substrate (11) and a crystal Ge layer (12), wherein the SOI substrate (11) comprises a Si substrate layer (110), a SiO2 layer (120) and a Si layer which are sequentially arranged in a lamination layer, the Si layer comprises an N-type doping region (111), an i-type region (112) and a P-type doping region (113) which are sequentially arranged along a horizontal direction, and the crystal Ge layer (12) is arranged on a surface of the i-type region (112). The photoelectric detector provided by the invention has the advantages of simple process step, short process period, low thermal budget and the like, the dislocation density,the surface roughness and the interface defect of a Ge / Si interface can be effectively reduced by the formed crystal Ge layer, the characteristic of the Ge / Si interface is improved, so that the photoelectric detector has the characteristics of high-speed response rate and high quantum efficiency.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a lateral PiN structure photodetector. Background technique [0002] In optical fiber communication systems, photodetectors are essential key components. Short-distance, high-density optical fiber communication systems and data transmission systems in the 0.8 μm to 0.9 μm band often use Si single crystal substrates or GaAs-based PIN photodetectors, avalanche photodetectors and silicon preamplifiers. . The optical fiber communication network in the 1.06μm-1.55μm band usually uses a Ge single crystal substrate or an InP-based PIN photodetector, an avalanche photodetector and a silicon preamplifier mixed and integrated optical receiver for detection. [0003] In recent years, with the development of optical communication technology, high-speed optical fiber communication systems require semiconductor photodetectors to have a higher rate, and the developme...

Claims

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Application Information

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IPC IPC(8): H01L31/105H01L31/18
CPCH01L31/105H01L31/1804Y02P70/50
Inventor 张亮
Owner XIAN CREATION KEJI CO LTD
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