Preparation method of single layer molybdenum disulfide and titanium dioxide nano heterojunction

A single-layer molybdenum disulfide and titanium dioxide technology, applied in the field of materials science, can solve problems such as low photocatalytic efficiency, and achieve the effects of simple process, low cost and significant technological progress

Inactive Publication Date: 2018-03-16
SHANGHAI INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the above technical problems in the prior art, the present invention provides a method for preparing a single-layer molybdenum disulfide and titanium dioxide nano-heterojunction,

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] 1) Si / SiO 2 The substrate was ultrasonically cleaned in deionized water, acetone and ethanol for 20 minutes respectively, and the surface of the substrate was dried with high-purity gas; the graphite boat filled with molybdenum trioxide was placed in the central high-temperature heating zone of the chemical vapor deposition device, and the Si / SiO 2 The substrate is placed on the graphite boat, and the vacuum degree of the chemical vapor deposition device is adjusted below 5mTorr by a vacuum pump; a protective gas is introduced into the closed quartz tube for 5 minutes to evacuate, and the tube furnace is heated to 700°C and kept warm After 10 minutes, turn off the heating and cool to room temperature to obtain flake monolayer MoS 2 .

[0016] 2) The sheet-like monolayer MoS 2 Take it out from the chemical vapor deposition device, dissolve 20mmol of tetrabutyl titanate in 36mL of absolute ethanol, then add 20mmol of acetylacetone, seal the mixed solution at room temper...

Embodiment 2

[0019] 1) Si / SiO 2 The substrate was ultrasonically cleaned in deionized water, acetone and ethanol for 50 minutes respectively, and the surface of the substrate was dried with high-purity gas; a chemical vapor deposition device was used, and a graphite boat filled with molybdenum trioxide was placed in the center of the chemical vapor deposition device In the high-temperature heating zone, place the substrate on a graphite boat, and use a vacuum pump to adjust the vacuum degree of the chemical vapor deposition device below 5mTorr; pass a protective gas into the closed quartz tube for 10 minutes to evacuate, and turn on the heating switch of the chemical vapor deposition device , heat up to 750°C, keep warm for 5 minutes, turn off the heating, and cool to room temperature to obtain flake monolayer MoS 2 .

[0020] 2) will be attached with flake monolayer MoS 2 The substrate was taken out from the chemical vapor deposition device, 20mmol of tetrabutyl titanate was dissolved i...

Embodiment 3

[0023] 1) Si / SiO 2 The substrate was ultrasonically cleaned in deionized water, acetone and ethanol for 20 minutes respectively, and the surface of the substrate was dried with high-purity gas; the graphite boat filled with molybdenum trioxide was placed in the central high-temperature heating area of ​​the chemical vapor deposition device, and the substrate was placed in the On the graphite boat, use a vacuum pump to adjust the vacuum degree of the chemical vapor deposition device below 5mTorr; pass a protective gas into the closed quartz tube for 5 minutes to evacuate, turn on the furnace heating switch, raise the temperature to 800°C, keep it warm for 5 minutes, and turn off After heating and cooling to room temperature, flake-like monolayer MoS can be obtained 2 .

[0024] 2) will be attached with flake monolayer MoS 2 The substrate was taken out from the chemical vapor deposition device, 20mmol of tetrabutyl titanate was dissolved in 30mL of absolute ethanol, and then 2...

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Abstract

The invention relates to a preparation method of a single layer molybdenum disulfide and titanium dioxide nano heterojunction. The method includes: firstly subjecting an Si/SiO2 substrate to ultrasonic cleaning, and then performing blow drying; putting a graphite boat loaded with molybdenum trioxide in a high temperature area of a chemical vapor deposition apparatus for heating, putting an Si/SiO2substrate on the graphite boat and conducting vacuum pumping; introducing a protective gas into a closed quartz tube, then performing evacuation, heating a tube furnace, raising the temperature to 700-800DEG C, conducting heat preservation for 5-20min, stopping heating, and performing cooling to room temperature to obtain flake single layer MoS2; dissolving tetrabutyl titanate in anhydrous ethanol, then adding acetyl acetone, and performing stirring at room temperature to titanium dioxide sol; immersing the flake single layer MoS2 in titanium dioxide sol, anhydrous ethanol and deionized waterin order, then using anhydrous ethanol for flushing to remove water attached to the surface, and then conducting annealing in a 500-550DEG C muffle furnace for 1-2h, thus obtaining the single layer MoS2/TiO2 nano heterojunction structure.

Description

technical field [0001] The invention belongs to the field of materials science, and relates to a preparation method of nanomaterials, in particular to a preparation method of single-layer molybdenum disulfide and titanium dioxide nano-heterojunction. Background technique [0002] As a deep oxidation method, photocatalysis has been recognized as the most promising pollutant removal technology. TiO 2 As a high-bandgap semiconductor, the bandgap of anatase is 3.2eV, and rutile is 3.4eV, which can only use ultraviolet light. However, ultraviolet light in sunlight only accounts for about 5% of solar light energy, which limits its light energy utilization. rate; the second is TiO 2 The low conductivity and high recombination rate of photo-excited photogenerated electron-hole pairs not only limit its application in the field of sensing, but also make its photocatalytic efficiency low. In order to solve the above problems, broaden the TiO 2 The photoresponse range of TiO can pro...

Claims

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Application Information

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IPC IPC(8): B01J27/051B82Y30/00
CPCB01J27/051B01J35/004B01J37/0215B01J37/0228B01J37/08B82Y30/00
Inventor 刘玉峰郑新峰房永征侯京山张娜赵国营张若愚李倩倩
Owner SHANGHAI INST OF TECH
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