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SiC MOS capacitor and manufacturing method

A manufacturing method and capacitor technology, which is applied in the field of microelectronics, can solve the problems of uncontrollable nitrogen content, affecting device stability, and difficult precise control of nitrogen gas dose, so as to increase MOS channel mobility, improve interface characteristics, and reduce suspension key effect

Inactive Publication Date: 2018-03-30
ZTE CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At the same time, the dose of nitrogen gas is not easy to control accurately, so that the nitriding treatment cannot control the nitrogen content at the interface. Since the nitriding treatment will introduce deep energy level traps and a large number of hole traps, it will affect the stability of the long-term operation of the device.

Method used

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  • SiC MOS capacitor and manufacturing method
  • SiC MOS capacitor and manufacturing method

Examples

Experimental program
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Effect test

Embodiment 1

[0071] Step 1, growing an N-type SiC epitaxial layer.

[0072] The thickness is 380μm, the doping concentration is 5×10 18 cm -3 The N-type SiC substrate material is placed in a SiC epitaxial growth reaction furnace, and a layer of N-type SiC epitaxial layer is grown on one side of it to obtain an N-type SiC epitaxial wafer. The temperature in the SiC epitaxial growth furnace is 1570 ° C, doped The impurity concentration is 5×10 15 cm -3 , until the thickness of the grown SiC epitaxial layer is 30 μm.

[0073] In the embodiment of the present invention, the thickness is 380 μm, and the doping concentration is 5×10 18 cm -3 The N-type SiC substrate of N-type SiC substrate is used as an example to illustrate, the other thickness is 350-400μm; the doping concentration is 1×10 18 ~1×10 19 cm -3 All N-type SiC substrate materials are suitable for the present invention.

[0074] In step 2, pretreatment is performed on the grown N-type SiC epitaxial wafer.

[0075] 2.1 Ultr...

Embodiment 2

[0093] In addition to the process of depositing and growing the alkaline earth metal oxide interface layer in step 3, the deposition temperature is 200 ° C, and the deposition time is 7 minutes; the thickness of the deposited and grown BaO interface layer is 1 nm; the cooling rate of the cooling treatment in the Ar gas environment Except for 3°C / min, the rest are the same as in Example 1.

Embodiment 3

[0095] Except that in the process of depositing and growing the alkaline earth metal oxide interface layer in step 3, the deposition temperature is 400° C., and the deposition time is 3 minutes, the rest is the same as that of embodiment 1.

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Abstract

The invention discloses a high level band voltage stability and low interfacial state density SiC MOS capacitor and a manufacturing method and relates to the microelectronic technology field. The SiCMOS capacitor comprises a negative electrode, a SiC substrate, a SiC epitaxial layer, a secondary main group alkaline earth metal oxide interface layer, a SiO2 gate dielectric layer and a positive electrode which are successively superposed and arranged. By using the SiC MOS capacitor, the alkaline earth metal oxide interface layer is superposed between the SiC epitaxial layer and the SiO2 gate dielectric layer so that an interface stress is alleviated; dangling bonds are reduced; purposes of decreasing an interfacial state density and a boundary trap density, improving an interface characteristic and increasing stability of a level band capacitor are reached; and quality of the SiC MOS capacitor and reliability are increased.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to the manufacture of semiconductor devices, in particular to SiC MOS capacitors and a manufacturing method thereof. Background technique [0002] As a typical representative of the third-generation semiconductor, SiC material has become an ideal material for making high-temperature, high-power, high-frequency and high-radiation-resistant devices due to its excellent physical and chemical properties. Compared with the first-generation semiconductor materials represented by Si and the second-generation semiconductor materials represented by GaAs, SiC materials have the advantages of large band gap, high critical breakdown electric field, and high thermal conductivity. Therefore, SiC materials and devices are currently , Process research and development has become a hot spot in the field of microelectronics technology research. [0003] Compared with other wide-bandgap semicond...

Claims

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Application Information

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IPC IPC(8): H01L29/94H01L21/02
CPCH01L21/02104H01L29/94
Inventor 宋庆文肖莉王梁永贾一凡王志坚张玉明
Owner ZTE CORP
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