Phosphorus doping control method for emitter of crystalline silicon solar cell

A technology of solar cells and control methods, applied in semiconductor/solid-state device manufacturing, circuits, photovoltaic power generation, etc., can solve the problems of incompatibility between peak concentration and junction depth, achieve the best photoelectric conversion efficiency, increase peak concentration, and photoelectric conversion The effect of improving efficiency

Active Publication Date: 2018-04-03
SHANXI LUAN PHOTOVOLTAICS TECH
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AI Technical Summary

Problems solved by technology

Existing process peak concentration

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0015] Select M2 P-type monocrystalline silicon wafers, and carry out alkali cleaning and alkali texturing on the production line to form a textured surface;

[0016] Using POCl 3 Liquid source, phosphorus diffusion in a tubular diffusion furnace

[0017] Low-temperature feeding boat: put the monocrystalline silicon wafer into the quartz boat, enter the diffusion furnace tube, set the temperature of the furnace tube to 770°C, and inject 8 slm of nitrogen into the tube diffusion furnace;

[0018] For the first low-temperature oxidation, keep the temperature at 770°C, nitrogen flow at 7.5slm, oxygen flow at 1200sccm, and oxidize for 5 minutes;

[0019] For the first deposition, control N 2 The flow rate is 7.5slm, the oxygen flow rate is stopped, the temperature is raised to 800°C at a heating rate of 6°C / min, and the temperature is kept constant. The nitrogen flow rate is adjusted to 7slm, the phosphorus oxychloride flow rate is 1450sccm, the oxygen flow rate is 800slm, and t...

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Abstract

The invention relates to the field of solar cell production, and discloses a phosphorus doping control method for an emitter of a crystalline silicon solar cell. The method is carried out according tothe following steps of (1) first low-temperature oxidation; (2) first deposition; (3) second low-temperature oxidation; (4) second deposition and first propulsion; and (5) third deposition and secondpropulsion. According to the phosphorus doping control method, the peak concentration is improved through low-temperature oxidation, deposition and low-temperature oxidation, meanwhile, lattice dislocation is not caused, and then the surface of the cell is passivated through double deposition and propulsion, thereby obtaining better photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the field of solar cell production. Background technique [0002] The preparation of solar cells mainly includes cleaning texture-diffusion junction-wet edge trimming-PECVD (plasma vapor deposition anti-reflection film)-screen printing-sintering-sorting. Diffusion junction is a key step in the preparation of solar cells. It is through diffusion into the semiconductor wafer to change the conductivity type of the crystal, thereby forming P and N junctions. It determines the open circuit voltage, fill factor and short circuit current of the cell, and is an important factor affecting the conversion efficiency of the cell. [0003] The existing technology is that solar cells use P-type silicon, with N 2 , O 2 and POCl 3 As a raw material, a chemical reaction is carried out at high temperature, and a layer of phosphosilicate glass is formed on the surface of the silicon wafer, and then phosphorus atoms diffuse into the silicon to...

Claims

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Application Information

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IPC IPC(8): H01L21/223H01L31/0224H01L31/18
CPCH01L21/2233H01L31/022425H01L31/1804Y02E10/547Y02P70/50
Inventor 周凡崔龙辉焦朋府韩超杨进张文原刘文超任欢欢
Owner SHANXI LUAN PHOTOVOLTAICS TECH
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