Phosphorus doping control method for emitter of crystalline silicon solar cell

Abstract

The invention relates to the field of solar cell production, and discloses a phosphorus doping control method for an emitter of a crystalline silicon solar cell. The method is carried out according tothe following steps of (1) first low-temperature oxidation; (2) first deposition; (3) second low-temperature oxidation; (4) second deposition and first propulsion; and (5) third deposition and secondpropulsion. According to the phosphorus doping control method, the peak concentration is improved through low-temperature oxidation, deposition and low-temperature oxidation, meanwhile, lattice dislocation is not caused, and then the surface of the cell is passivated through double deposition and propulsion, thereby obtaining better photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to the field of solar cell production. Background technique [0002] The preparation of solar cells mainly includes cleaning texture-diffusion junction-wet edge trimming-PECVD (plasma vapor deposition anti-reflection film)-screen printing-sintering-sorting. Diffusion junction is a key step in the preparation of solar cells. It is through diffusion into the semiconductor wafer to change the conductivity type of the crystal, thereby forming P and N junctions. It determines the open circuit voltage, fill factor and short circuit current of the cell, and is an important factor affecting the conversion efficiency of the cell. [0003] The existing technology is that solar cells use P-type silicon, with N 2 , O 2 and POCl 3 As a raw material, a chemical reaction is carried out at high temperature, and a layer of phosphosilicate glass is formed on the surface of the silicon wafer, and then phosphorus atoms diffuse into the silicon to...

AI Technical Summary

Problems solved by technology

Existing process peak concentration and junction depth cannot have both