Ceramic material titanium tantalum silicon carbon for solid oxide fuel cell interconnector
A solid oxide, ceramic material technology, used in fuel cells, circuits, electrical components, etc., can solve the problems of insufficient creep resistance of alloy connector materials, mismatched thermal expansion coefficients, and decreased battery output performance, and achieve anti-oxidation. Good properties, high creep resistance, and the effect of reducing thermal stress
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Embodiment 1
[0048] When x=0.05 in the chemical formula, the selected experimental material is titanium tantalum silicon carbon material (Ti 0.95 Ta 0.05 ) 3 SiC 2 , and its preparation process is as follows:
[0049] Ti, Ta, Si, and C element powders are used as synthetic materials. The above-mentioned material powders are prepared according to the ratio of 2.85:0.15:1:2. , taken out and sieved; cold-pressed in a graphite mold with a pressure of 5MPa, and put into a hot-pressed furnace for hot-pressing synthesis. In the present invention, the technology adopted for the hot-pressing synthesis is: under the pressure of 30 MPa, heat preservation at 1650° C. for 60 minutes, and the reaction atmosphere is flowing Ar gas.
[0050] figure 1 The sintered dense (Ti 0.95 Ta 0.05 ) 3 SiC 2 XRD results of the bulk.
[0051] figure 2 It is a synthetic titanium-tantalum-silicon-carbon material (Ti 0.95 Ta 0.05 ) 3 SiC 2 SEM backscattered image of the polished surface. It can be seen th...
Embodiment 2
[0061] When x=0.005 in the chemical formula, the selected experimental material is titanium tantalum silicon carbon material (Ti 0.995 Ta 0.005 ) 3 SiC 2 , and its preparation process is as follows:
[0062] Ti, Ta, Si, and C element powders are used as synthetic materials. The above-mentioned material powders are prepared according to the ratio of 2.985:0.015:1:2. The raw powders are mixed in a ball mill tank, and the ball milling time is 10 hours. , taken out and sieved; cold-pressed in a graphite mold with a pressure of 3 MPa, and put into a hot-pressed furnace for hot-pressing synthesis. In the present invention, the technology adopted for the hot-pressing synthesis is: under the pressure of 20 MPa, heat preservation at 1600° C. for 40 minutes, and the reaction atmosphere is flowing Ar gas. The density of the synthesized material is 98.6%. The oxidation kinetic constant at 800°C is: 9.86×10 -14 g 2 cm -4 ·s -1 .
Embodiment 3
[0064] When x=0.5 in the chemical formula, the selected experimental material is titanium tantalum silicon carbon material (Ti 0.5 Ta 0.5 ) 3 SiC 2 , and its preparation process is as follows:
[0065] Ti, Ta, Si, and C element powders are used as synthetic materials. The above-mentioned material powders are prepared according to the ratio of 1.5:1.5:1:2. , taken out and sieved; cold-pressed in a graphite mold with a pressure of 10MPa, and put into a hot-pressed furnace for hot-pressing synthesis. In the present invention, the technology adopted for the hot-pressing synthesis is: under 70MPa pressure, heat preservation at 1650°C for 30 minutes, then heat preservation at 1400°C for 60 minutes, and the reaction atmosphere is flowing Ar gas. The density of the synthesized material is 98.1%. The oxidation kinetic constant at 800°C is: 1.25×10 -13 g 2 cm -4 ·s -1 .
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