A kind of preparation method of tungsten diselenide nanotube

A technology of tungsten diselenide and nanotubes, which is applied in the direction of binary selenium/tellurium compounds, nanotechnology, metal selenide/telluride, etc., can solve the problems such as the lack of preparation technology of tungsten diselenide nanotubes, and achieve favorable Large-scale industrial production, improved comprehensive performance, and strong dimensional controllability

Active Publication Date: 2020-05-05
FOSHAN UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current preparation technology for tungsten diselenide nanotubes is still lacking.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] A preparation method for tungsten diselenide nanotubes, comprising the following process steps:

[0018] 1) Spread 5g of tungsten hexacarbonyl on the bottom of a ceramic crucible, place a porous anodized aluminum template with a pore diameter of 40nm downwards on top of tungsten hexacarbonyl, seal the crucible and place it in a vacuum tube furnace, and pass in 100SCCM of nitrogen Purge air from furnace tubes. Under the protection of nitrogen at 100SCCM, raise the temperature to 100°C and keep it for 60 minutes, then continue to raise the temperature to 300°C and keep it for 40 minutes to get metal tungsten deposition, stop heating;

[0019] 2) After the vacuum tube furnace in step 1) is down to room temperature, take out the alumina template, and place its opening downwards in a ceramic crucible equipped with selenium powder, place it in a vacuum tube furnace after sealing the crucible, and place it in a 100SCCM Under the protection of nitrogen, raise the temperature t...

Embodiment 2

[0022] A preparation method for tungsten diselenide nanotubes, comprising the following process steps:

[0023] 1) Spread 5g of tungsten hexacarbonyl on the bottom of a ceramic crucible, place a porous anodized aluminum template with a pore size of 10nm downwards on top of tungsten hexacarbonyl, seal the crucible and place it in a vacuum tube furnace, and pass in 100SCCM of nitrogen Purge air from furnace tubes. Under the protection of nitrogen at 100SCCM, raise the temperature to 50°C and keep it for 200 minutes, then continue to raise the temperature to 300°C and keep it for 40 minutes to get metal tungsten deposition, stop heating;

[0024] 2) After the vacuum tube furnace in step 1) is down to room temperature, take out the porous anodized aluminum template and place its opening downwards in a ceramic crucible equipped with selenium powder. After sealing the crucible, place it in a vacuum tube furnace. Under the protection of nitrogen, raise the temperature to 250°C and k...

Embodiment 3

[0027] A preparation method for tungsten diselenide nanotubes, comprising the following process steps:

[0028] 1) Spread 5g of tungsten hexacarbonyl on the bottom of a ceramic crucible, place a porous anodized aluminum template with a pore size of 200nm downwards on top of tungsten hexacarbonyl, seal the crucible and place it in a vacuum tube furnace, and feed it with 100 SCCM of argon Gas cleaning of the air in the furnace tubes. Under the protection of 100SCCM argon gas, raise the temperature to 150°C and keep it for 30 minutes, then continue to raise the temperature to 150°C and keep it for 30 minutes to get metal tungsten deposition, stop heating;

[0029] 2) After the vacuum tube furnace in step 1) is down to room temperature, take out the porous anodized aluminum template and place its opening downwards in a ceramic crucible equipped with selenium powder. After sealing the crucible, place it in a vacuum tube furnace. Under the protection of argon, raise the temperature...

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Abstract

The invention discloses a method for preparing tungsten diselenide nanotubes. The method comprises the following steps: 1) laying tungsten hexacarbonyl to the bottom of a ceramic crucible, laying a porous anodic aluminum oxide mold plate with an opening facing downwards on the tungsten hexacarbonyl, sealing the ceramic crucible, putting into a tubular furnace, performing low-temperature sublimation deposition in the presence of a gas, and continuously performing heating pyrolysis; 2) cooling the vacuum tubular furnace to the room temperature, putting the mold plate with the opening facing downwards into a ceramic crucible with selenium powder, sealing the ceramic crucible, heating in the presence of the gas, and enabling a single substance, namely selenium, to react with a metal, namely tungsten, directly; 3) removing the excessive aluminum oxide mold plate and excessive selenium by using a diluted acid solution, performing suction filtration treatment, and drying, thereby obtaining afinished product. The method disclosed by the invention is simple in step, free of environment pollution and free of complex equipment, a tungsten diselenide nanotube powder material prepared by usingthe method is good in size controllability, good in crystallinity and uniform in nanotube wall and morphology, and thus the comprehensive properties of a finished product of the tungsten diselenide nanotube powder material are greatly improved. The method is wide in applicability and beneficial to large-scale industrial production.

Description

technical field [0001] The invention relates to the field of semiconductor nanomaterials, in particular to a method for preparing semiconductor nanotubes. Background technique [0002] Tungsten diselenide is a transition metal chalcogenide compound with a layered structure, the layers are linked by strong covalent bonds, and the layers are linked by weak van der Waals bonds. Therefore, tungsten diselenide has excellent lubricating properties and is widely used in the field of photovoltaic devices. According to the latest research report in the United States, tungsten diselenide is the material with the lowest thermal conductivity found so far. The lower the thermal conductivity of the material, the harder it is for the heat in the system to dissipate, and the higher the energy conversion rate will be. Therefore, tungsten diselenide can be used as a new heat-resistant material in a wide range of applications. In addition, due to the large number of active sites exposed on ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04B82Y40/00
CPCB82Y40/00C01B19/007C01P2004/13
Inventor 胡柱东林海敏
Owner FOSHAN UNIVERSITY
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