Particle vibration velocity measurement sensitive structure and preparation method thereof
A sensitive structure and particle velocity technology, applied in the direction of measuring devices, microstructure technology, microstructure devices, etc., can solve the problems that limit the wide application of particle velocity measurement sensors, the lower limit of the effective working frequency of sensors, and the deterioration of sensor response characteristics. Achieve the effect of suppressing heat conduction effect, reducing effective cross-sectional area, and ensuring response sensitivity
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Embodiment 1
[0040] Such as figure 1 As shown, a bridge hole is formed on the silicon substrate 1, a first electrode 2 is provided on one side of the bridge hole, and a second electrode 3 and a third electrode 4 are provided on the other side of the bridge hole, which is the prior art. A first thin wire 5 and a second thin wire 6 are arranged above the bridge hole, and the first thin wire 5 and the second thin wire 6 are arranged in parallel and keep a small distance. One end of the two thin wires is connected to the first electrode 2, and the two The other end of the thin wire is connected 4 with the second electrode 3 and the third electrode respectively. The structures of the first thin wire 5 and the second thin wire 6 are both, and the two ends of the thin wire are curved. When implemented, the two ends of the thin wire are in the shape of an S or in the shape of "几". In this embodiment, , both ends of the thin wire are S-shaped. The middle part of the thin wire is straight and rect...
Embodiment 2
[0042] In the second embodiment, a thin wire is arranged between the first thin wire and the second thin wire, and the said one thin wire is arranged in parallel with the first thin wire and the second thin wire, and its structure is the same as that of the first thin wire and the second thin wire. The two thin threads are the same. The width of the thin wire in the middle part of the thin wire is 8 μm, and the thickness is 0.2 μm. The width of the thin wire at both ends of the thin wire was 0.5 μm, and the thickness was 0.08 μm. All the other structures are the same as in Embodiment 1.
Embodiment 3
[0044] The preparation method of the particle vibration velocity measurement sensitive structure of the present invention comprises the following steps:
[0045] Step 1: If figure 2 As shown, a thermal insulation layer and a support layer are sequentially deposited on a silicon substrate, wherein the thermal insulation layer is located below the support layer;
[0046] Step 2: If image 3 As shown, the first gluing, photolithography and development are carried out to define the first electrode, the second electrode, the third electrode and the first sensitive layer of the particle vibration measurement sensitive structure. The first sensitive layer is the two sides of the thin wire. end part;
[0047] Step 3: If Figure 4 As shown, the adhesion layer and the first sensitive layer are sequentially evaporated and deposited, wherein the adhesion layer is located below the first sensitive layer;
[0048] Step 4: If Figure 5 As shown, the photoresist is stripped to form a corr...
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