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An n-type doped electron transport layer and tio 2 Layer perovskite cell fabrication method

A technology of electron transport layer and perovskite battery, which is applied in semiconductor/solid-state device manufacturing, circuit, photovoltaic power generation, etc. It can solve the problems of poor stability of perovskite, reduce internal defects, promote improvement, and improve short-circuit current. Effect

Active Publication Date: 2021-03-16
SUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Technical problem to be solved: Aiming at the shortcomings of the existing perovskite poor stability, an n-type doped electron transport layer and TiO 2 The preparation method of the perovskite battery of the first layer, using the strong reducing ability of DMC, based on the solution processing doping process, successfully realized the high-efficiency n-type doping of Bis-PCBM, improved the electron mobility of BiS-PCBM film and enhanced the film Electrical conductivity, which provides efficient electron extraction on the cathode side, and reduces the internal defects of the device, inhibits the decomposition of perovskite, and prepares efficient and stable perovskite solar cells

Method used

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  • An n-type doped electron transport layer and tio <sub>2</sub> Layer perovskite cell fabrication method
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  • An n-type doped electron transport layer and tio <sub>2</sub> Layer perovskite cell fabrication method

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Embodiment 1

[0027] An n-type doped electron transport layer and TiO 2 A method for preparing a layered perovskite battery, comprising the following steps:

[0028] (1) FTO transparent conductive glass substrate cleaning and TiO 2 Film preparation: The FTO transparent conductive glass substrate was repeatedly ultrasonically cleaned with deionized water, acetone and ethanol for 3 times, and then dried at 100 °C to completely remove the solvent and moisture. and ozone treatment for 25 min, and then deposit the electron transport layer TiO on the treated FTO transparent conductive glass substrate 2 , put it in a 100°C oven for later use;

[0029] (2) Preparation of Bis-PCBM and DMC composite film: Dissolve 5 mg Bis-PCBM in 2 mL of chlorobenzene, stir for 4 h to obtain a Bis-PCBM solution, and then dissolve the dopant DMC in ethanol to prepare a precursor solution with a concentration of 0.2mg / mL, the precursor solution was doped in Bis-PCBM solution, and the volume ratio of the two was 0.0...

Embodiment 2

[0036] An n-type doped electron transport layer and TiO 2 A method for preparing a layered perovskite battery, comprising the following steps:

[0037] (1) FTO transparent conductive glass substrate cleaning and TiO 2 Film preparation: The FTO transparent conductive glass substrate was repeatedly ultrasonically cleaned with deionized water, acetone and ethanol for 3 times, and then dried at 100 °C to completely remove the solvent and moisture. and ozone treatment for 25 min, and then deposit the electron transport layer TiO on the treated FTO transparent conductive glass substrate 2 , put it in a 100°C oven for later use;

[0038] (2) Preparation of Bis-PCBM and DMC composite film: Dissolve 5 mg Bis-PCBM in 2 mL of chlorobenzene, stir for 4 h to obtain a Bis-PCBM solution, and then dissolve the dopant DMC in ethanol to prepare a precursor solution with a concentration of 0.2mg / mL, the precursor solution was doped in Bis-PCBM solution, and the volume ratio of the two was 0.1...

Embodiment 3

[0045] An n-type doped electron transport layer and TiO 2 A method for preparing a layered perovskite battery, comprising the following steps:

[0046] (1) FTO transparent conductive glass substrate cleaning and TiO 2 Film preparation: The FTO transparent conductive glass substrate was repeatedly ultrasonically cleaned with deionized water, acetone and ethanol for 3 times, and then dried at 100 °C to completely remove the solvent and moisture. and ozone treatment for 25 min, and then deposit the electron transport layer TiO on the treated FTO transparent conductive glass substrate 2 , put it in a 100°C oven for later use;

[0047] (2) Preparation of Bis-PCBM and DMC composite film: Dissolve 5 mg Bis-PCBM in 2 mL of chlorobenzene, stir for 4 h to obtain a Bis-PCBM solution, and then dissolve the dopant DMC in ethanol to prepare a precursor solution with a concentration of 0.2mg / mL, the precursor solution was doped in Bis-PCBM solution, and the volume ratio of the two was 0.3...

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Abstract

The invention provides an n-type doped electron transport layer and TiO 2 The preparation method of the perovskite cell of layer comprises the following steps: (1) FTO transparent conductive glass substrate cleaning and TiO 2 Thin film preparation, deposited on TiO 2 , put it in the oven for later use; (2) Preparation of Bis-PCBM and DMC composite film; (3) Spin coating on the deposited TiO 2 (4) Preparation of perovskite film; (5) Preparation of Spiro-OMeTAD film, spin-coated on FTO in step (4); (6) Evaporation of MoO on Spiro-OMeTAD film by evaporation method 3 and Ag electrodes. The method of the present invention can improve the electron mobility and electrical conductivity of the film, promote the improvement of the photoelectric conversion efficiency of the device, make the surface of the film smoother, and can be used as a good substrate for subsequent deposition and growth of the perovskite layer, and can slow down the degradation process of the perovskite layer. Improve device stability.

Description

technical field [0001] The invention belongs to the field of photovoltaic devices, in particular to an n-type doped electron transport layer and TiO 2 Preparation method of layered perovskite battery. Background technique [0002] Organic-inorganic hybrid perovskite solar cells are considered to be a form of energy comparable to inorganic silicon solar cells due to their unique optical properties and simple fabrication process. After several years of development, although its photoelectric conversion efficiency has exceeded 22%, the fabrication of high-efficiency and long-term stable perovskite solar cells is a necessary condition for its commercialization. Perovskite solar cells have two device structures, planar and porous. In the planar structure, besides the perovskite layer itself, the structure of the adjacent interfacial layers also strongly affects the device stability. An ideal interface material should possess desirable physical, chemical and electronic properti...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/48H01L51/46H01L51/42
CPCH10K71/12H10K85/30H10K30/30H10K2102/00Y02E10/549
Inventor 王照奎廖良生叶青青
Owner SUZHOU UNIV
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