Preparation method of phenyl silsesquioxane/oxidized graphene/polyimide three-phase compound film

A phenyl sesqui, composite film technology, applied in the field of insulating materials, can solve problems such as reducing the dielectric constant, and achieve the effects of excellent dielectric properties, good mechanical properties, and good thermal properties

Inactive Publication Date: 2018-07-06
HARBIN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to solve the problem that the existing composite film cannot reduce the dielectric constant while improving its thermal performance and mechanical performance, and provides a three-phase composite film of phenylsilsesquioxane / graphene oxide / polyimide Film Preparation Method

Method used

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  • Preparation method of phenyl silsesquioxane/oxidized graphene/polyimide three-phase compound film
  • Preparation method of phenyl silsesquioxane/oxidized graphene/polyimide three-phase compound film

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specific Embodiment approach 1

[0022] Specific embodiment one: the preparation method of a kind of phenylsilsesquioxane / graphene oxide / polyimide three-phase composite film of this embodiment is to carry out according to the following steps:

[0023]1. Under the condition of ice-water bath, use mixed acid solution to dissolve the expanded graphite, mechanically stir until the expanded graphite is completely dissolved, then add potassium permanganate to it, mechanically stir until the potassium permanganate is completely dissolved, continue stirring for 1-2 hours, and then transfer to Keep warm in a water bath with a temperature of 35°C for 1 to 2 hours, then raise the temperature of the water bath from 35°C to 98°C, and add deionized water to it at a constant rate using a separatory funnel during the heating process until the temperature reaches 98°C. After incubating at 98°C for 1-2 hours, add 30% hydrogen peroxide solution until the solution turns bright yellow; dilute the bright yellow solution, filter the...

specific Embodiment approach 2

[0028] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the volume ratio of the mass of expanded graphite described in step 1 to the mixed acid solution is 1g:100mL. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0029] Specific embodiment three: the difference between this embodiment and specific embodiment one or two is: the mass ratio of expanded graphite and potassium permanganate described in step one is 1:6. Others are the same as in the first or second embodiment.

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Abstract

The invention relates to the technical field of insulating materials, in particular to a preparation method of a phenyl silsesquioxane/oxidized graphene/polyimide three-phase compound film so as to solve the problem that an existing compound film cannot give consideration to reduction of dielectric constant and improvement of thermal properties and mechanical properties at the same time. The preparation method comprises the steps that oxidized graphene is prepared through an improved Hummers method; and the phenyl silsesquioxane/oxidized graphene/polyimide three-phase compound film is preparedby adopting an in-situ polymerization method. The preparation method is applied to preparation of the phenyl silsesquioxane/oxidized graphene/polyimide three-phase compound film.

Description

technical field [0001] The invention relates to the technical field of insulating materials, in particular to a method for preparing a phenylsilsesquioxane / graphene oxide / polyimide three-phase composite film. Background technique [0002] In recent years, the application of nanoporous materials with low dielectric constant in the microelectronics industry has attracted great attention. Due to good mechanical properties, thermal properties and electrical properties, polyimide has been widely used in dielectric materials and packaging materials in the microelectronics industry. However, with the continuous reduction of the feature size of the chip in the integrated circuit, the parasitic resistance and capacitance of the interconnection will cause the delay of signal transmission, crosstalk and energy loss. A new shackle for the development of multifunctional direction. In order to meet the requirements of high integration of integrated circuits and increase the transmission...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L79/08C08L83/04C08K3/04C08J5/18C08G73/10
CPCC08G73/1007C08G73/1071C08J5/18C08J2379/08C08J2483/04
Inventor 周宏汪修权张航金立国
Owner HARBIN UNIV OF SCI & TECH
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