High performance organic transistor photodetector based on bulk heterojunction-layered structure

Abstract

The invention discloses a high-performance organic transistor photodetector based on a bulk heterojunction-layered structure, including a substrate and a gate, a gate dielectric layer, a single-molecule self-assembly layer, A channel semiconductor layer and a charge transport layer, a source electrode and a drain electrode are also provided on a part of the charge transport layer, and a bulk heterogeneous electrode is also provided in the channel region between the source electrode and the drain electrode on the charge transport layer. Matte light-absorbing layer. The organic transistor photodetector of the present invention is based on the above-mentioned specific layered structure, can make full use of the CTE effect, effectively separate the photogenerated excitons and reduce their recombination probability, ensure the efficient transmission of charge carriers in the channel, and significantly improve the performance of OPTs devices. Light detection sensitivity and other comprehensive performance.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronic devices, and in particular relates to a high-performance organic transistor based on a bulk heterojunction-layered structure and a photodetector comprising the organic transistor, and more particularly relates to a working band of ultraviolet light, Visible light, infrared light and full-band high-performance organic transistors based on bulk heterojunction-layered structure. Background technique [0002] A photodetector is a device that converts optical signals into electrical signals, and has important applications in various fields of military and national economy. Before the 1980s, photodetectors were mainly based on inorganic semiconductors, such as GaN and SiC, whose preparation process was complicated and costly. In comparison, organic phototransistors (OPTs) with organic field-effect transistors (Organic Field-effect Transistors, OFETs) as functional devices have high sensitivi...

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Problems solved by technology

However, since there are also quantum dots or polymers in the channels of OPTs, these quantum dots or polymers themselves will become obstacles to hole transport when holes are transported in the channels.

Holes are transported in the organic semiconductor through hopping mode. When there are quantum dots in the channel, these quantum dots are essentially n-type semiconductors, which is equivalent to creating a large potential barrier for the holes, and the holes will be scattered and hindered, thus High-efficiency transport cannot be achieved, which will directly lead to a decrease in the photocurrent of OPTs and a prolonged response time (the time response is related to the mobility of channel carriers)

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