Method for preparing 2D perovskite quantum well film with high gain property

A quantum well thin film and perovskite technology, applied in chemical instruments and methods, 4/14 group organic compounds without C-metal bonds, lead organic compounds, etc., can solve problems such as radiation decay and low energy band gap, and achieve Improved stability, good optical absorption performance, and uniform shape

Inactive Publication Date: 2018-07-13
TIANJIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These remarkable properties of 2D layered perovskite are also due to its own lower energy band gap, and the electroluminescence generated by it is very effectively limited by the perovskite quantum well with a higher energy band gap, resulting in radiation decay

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  • Method for preparing 2D perovskite quantum well film with high gain property
  • Method for preparing 2D perovskite quantum well film with high gain property
  • Method for preparing 2D perovskite quantum well film with high gain property

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Embodiment 1

[0057] In the present embodiment, the preparation method of 2D perovskite quantum well film comprises the following steps:

[0058] 1) Butylamine bromide and lead dibromide are dissolved in anhydrous dimethyl sulfoxide (DMSO) at a molar ratio of 2:1, heated and ultrasonicated until the solid is completely dissolved to form 2D butylamine lead bromide (BA) 2 PbBr 4 Perovskite precursor solution;

[0059] 2) Dissolving methylamine bromide and lead dibromide in anhydrous dimethyl sulfoxide (DMSO) at a ratio of 1:1 to form a precursor solution of 3D methylamine lead bromine perovskite;

[0060] 3) Finally, the two perovskite precursor solutions were mixed in equal volumes to obtain a 2D perovskite quantum well material (BA) 2 (MA)Pb 2 Br 7 (n=2) precursor solution;

[0061] 4) Use a pipette gun to take 100 μL of the precursor solution of the 2D perovskite quantum well material and drop it on a piece of glass substrate. A bulk solvent was used to obtain a 2D perovskite quantum...

Embodiment 2

[0064] Step is as embodiment one, and methylamine bromide and lead dibromide are changed into methylammonium iodide and lead diiodide, and other conditions are unchanged. The position of the emission spectrum of the obtained film is at 600nm, the thickness of the film is ~100nm, the thickness is ~2nm, and the gain coefficient is 320cm -1 , with high gain characteristics.

Embodiment 3

[0066] 1) Dissolve butylamine iodine and lead diiodide in anhydrous N-N dimethylformamide (DMF) at a molar ratio of 2:1, heat and sonicate until the solid is completely dissolved to form 2D butylamine iodine (BA) 2 PB 4 Perovskite precursor solution;

[0067] 2) Dissolve methylamine iodide and lead diiodide in anhydrous N-N dimethylformamide (DMF) at a molar ratio of 2:2 to form 3D methylamine lead iodide MAPbI 3 Perovskite precursor solution;

[0068] 3) Finally, the two perovskite precursor solutions were mixed in equal volumes to obtain a 2D perovskite quantum well material (BA) 2 (MA) 2 Pb 3 I 10 (n=3) precursor solution;

[0069] 4) Use a pipette gun to take 50 μL of the precursor solution of the 2D perovskite quantum well material and drop it on a sapphire substrate. A bulk solvent was used to obtain a 2D perovskite quantum well film with a thickness of 350 nm.

[0070] Among them, the position of the emission spectrum is at 620nm, the coarseness is ~6nm, and the...

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Abstract

The invention relates to a method for preparing a 2D perovskite quantum well film with a high gain property. The method comprises the following steps: dissolving AX and PbX2 into a precursor solvent according to a mole ratio of 2 to 1, performing heating ultrasonic treatment till the solids are completely dissolved so as to obtain a precursor solution of 2D perovskite A2PbX4; dissolving BX and PbX2 into the precursor solvent according to the identical mole ratio so as to obtain a precursor solution of 3D perovskit BPbX3; performing isopyknic mixing on the two precursor solutions of perovskit according to a mole ratio of 1 to n-1 so as to obtain a precursor solution of a 2D perovskite quantum well material; dropping the precursor solution of the 2D perovskite quantum well material onto a substrate by using a pipette, and after the solution spreads off and is retained for 2-10 minutes on the substrate, performing spinning filming, removing the precursor solvent, so as to obtain the 2D perovskite quantum well film. By adopting the method, the optical and thermal stability and the gain properties of the 2D perovskite quantum well film can be improved.

Description

technical field [0001] The invention relates to a preparation method of a 2D perovskite quantum well film with high gain characteristics, belonging to the field of perovskite materials. Background technique [0002] Perovskite materials have a high light absorption coefficient, a long range of equilibrium electron and hole diffusion lengths, low defect state density, high charge carrier mobility, fast and efficient separation of photogenerated excitons, slow electron space The advantages of hole bimolecular recombination, tunable optical bandgap, and solution processing have attracted great attention from researchers. Since the advent of optically pumped solid-state organic lasers, the related research work has made great progress. But so far, electrically pumped lasers based on organic gain materials have not been realized. There are still many problems in the field of electrically pumped lasers to be solved. [0003] One very important item is the nature of the material...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/06C07F7/24
CPCC07F7/003C09K11/06C09K2211/188
Inventor 付红兵李美丽于振一姚建年
Owner TIANJIN UNIV
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