Amorphous Metal Thin Film Nonlinear Resistors
A technology of amorphous metal and thin film, applied in the field of microelectronic equipment, can solve problems such as high resistivity, achieve the effect of increasing voltage, increasing threshold voltage, and improving performance
Active Publication Date: 2022-07-26
AMORPHYX INC
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Amorphous metals can be identified by their electrical resistivity measurements, which show that while still conductive, amorphous metal materials have a resistivity approximately ten times greater than the corresponding crystalline material
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[0034] It should also be understood that, while the specific embodiments of the disclosure described herein are intended to be illustrative, various modifications may be made without departing from the spirit and scope of the invention. Accordingly, the present disclosure is not to be limited except by the appended claims.
[0035] In this description, specific specific details are provided in order to provide a thorough understanding of various aspects of the disclosed subject matter. However, the disclosed subject matter may be practiced without these specific details. In some instances, well-known structures and semiconductor processing methods including embodiments of the disclosed subject matter are omitted to avoid obscuring the description of other aspects of the present disclosure.
[0036] All references to "one embodiment" or "an embodiment" throughout this specification mean that a particular feature, structure, or characteristic associated with the described embod...
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Abstract
Amorphous multicomponent metal films (AMMFs) can be used to improve the performance of electronic components such as resistors, diodes, and thin film transistors. The interface performance of AMMF is better than that of crystalline metal films, so the electric field at the interface of AMMF and oxide film is more uniform. AMMF resistors (AMNRs) can be constructed as a three-layer structure including an amorphous metal layer, a tunnel insulator layer, and a crystalline metal layer. The I‑V performance characteristics of AMNRs can be tuned by modifying the order of materials, the pattern of electrodes, and the size and number of overlapping regions. The non-coplanar AMNR has a five-layer structure including three metal layers separated by a metal oxide tunnel insulator layer, in which the middle electrode is fabricated using an amorphous metal thin film material.
Description
technical field [0001] The present disclosure relates to microelectronic devices comprising one or more layers of amorphous metal films. Background technique [0002] Amorphous metals are rigid solid materials whose atomic structures lack the periodicity characteristic of crystalline materials. In amorphous metals, for example, the formation of crystal planes is suppressed by adding various components. Alternatively, this can be achieved by a binary system. Amorphous metals are usually formed by rapid quenching of metal melts, or by physical vapor deposition (ie, sputtering) from plasmas. Having more elements helps to achieve a slower quench rate of the melt, however, when plasma PVD is used, the quench rate can be so fast that multiple elements are less important. Even in a binary system, the size of the elements may vary. [0003] US Patent No. 8,436,337 describes an example of an amorphous metal Zr with four components - zirconium, copper, aluminum and nickel 55 Cu ...
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IPC IPC(8): H01L21/768H01L21/3205H01L21/02H10N97/00
CPCG02F1/134363G02F1/13439H01L28/24H01L29/4908H01L27/124H01L23/53209G02F1/136295H01L21/02068H01L21/02592H01L21/32055H01L21/76832H01L21/76834H01L21/3205H01L21/768H01L27/1255H01L29/786
Inventor 肖恩·威廉·缪尔
Owner AMORPHYX INC