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Preparation method of ruthenium/boron carbide multilayer film mirror for monochromator

A boron carbide and mirror technology, applied in coating, sputtering, metal material coating processes, etc., can solve the problems of reducing the optical properties of the film, hindering the application of the film, cracking the film, etc., to avoid the film The effect of shedding failure, avoiding the deformation of the substrate surface, and reducing the stress of the film layer

Active Publication Date: 2019-12-31
TONGJI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Larger film layer stress will cause two serious effects on the film. First, it will lead to cracking, separation or shedding of the film layer, which will affect the microstructure of the film material and reduce the actual optical performance of the film; Existence affects the bonding degree of the film and the substrate material, and the stress acting on the substrate will cause the deformation of the substrate surface shape, increase the surface shape error of the optical element, affect the shape of the incident wavefront, and seriously reduce the actual reflection of the multilayer monochromator High efficiency and light transmission efficiency greatly shorten its service life, which hinders the application of thin films in actual production
At present, there is no international research on how to reduce the film stress of ruthenium / boron carbide multilayer films

Method used

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  • Preparation method of ruthenium/boron carbide multilayer film mirror for monochromator
  • Preparation method of ruthenium/boron carbide multilayer film mirror for monochromator
  • Preparation method of ruthenium/boron carbide multilayer film mirror for monochromator

Examples

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Embodiment 1

[0027] The present embodiment provides a kind of preparation method of the ruthenium / boron carbide multilayer film reflector of low stress high reflectivity that monochromator uses, as figure 1 shown, including the following steps:

[0028] In step 1, the substrate is cleaned, dried with nitrogen gas and placed on the sample holder in the coating sputtering chamber. The surface roughness of the substrate is 0.18nm. Vacuumize the coating sputtering chamber to form a sputtering coating vacuum chamber.

[0029] In step 2, the sputtering gas mixed with argon and nitrogen is filled into the sputter coating vacuum chamber, the purity of argon and nitrogen is higher than 99.99%, and the mixing ratio of argon and nitrogen is 25.0%. The mixed sputtering gas is filled into the sputtering coating vacuum chamber through the flow meter and the pipeline. The diameter of the cavity is 0.5m-1.0m, the height is 0.5m-1.0m, and the flow rate of the mixed sputtering gas is kept between 6.0sccm-...

Embodiment 2

[0036] In this example, the mixing ratio of argon and nitrogen in Step 2 of Example 1 was changed from 25.0% to 16.0%, and other preparation processes and parameters were the same as in Example 1. The experimental results show that the stress of the film layer is greatly reduced, the reflectivity is greatly improved, and the structural quality of the multilayer film is greatly improved.

Embodiment 3

[0038] In this example, the mixing ratio of argon and nitrogen in Step 2 of Example 1 was changed from 25.0% to 30.0%, and other preparation processes and parameters were the same as in Example 1. The experimental results show that the stress of the film layer is greatly reduced, the reflectivity is greatly improved, and the structural quality of the multilayer film is greatly improved.

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Abstract

The invention relates to a preparation method of a ruthenium / boron carbide multilayer film reflector for a monochromator. The preparation method comprises the following steps that a base is placed ona sample frame in a sputtering film-coating cavity, and the sputtering film-coating cavity is vacuumized to form a sputtering film-coating vacuum cavity; the sputtering film-coating vacuum cavity is filled with mixed gas, the mixed gas is formed by mixing argon and nitrogen, the mixing proportion range of the mixed gas is 16%-30%, and the mixing proportion refers to the percentage of the nitrogenpartial pressure accounting for the total pressure intensity of the mixed gas; pre-sputtering of a ruthenium target material and a boron carbide target material are executed; and coating preparation of the ruthenium / boron carbide multilayer film reflector with an alternating ruthenium film layer and boron carbide film layer. Compared with the prior art, the stress of a ruthenium / boron carbide multilayer film prepared through the preparation method is greatly reduced, and the reflectivity is not decreased; and the method is high in process repeatability and controllability, and the preparationmethod has important application in the fields of high-throughput multilayer film monochromators and corresponding X-ray optical instruments.

Description

technical field [0001] The invention belongs to the technical field of optical thin films, and in particular relates to a method for preparing a ruthenium / boron carbide multilayer film reflector for a monochromator. Background technique [0002] Monochromators are central components in fields such as X-ray imaging and spectroscopy. In order to meet the relevant experimental requirements in fields such as high-sensitivity X-ray imaging and spectroscopy, the development of monochromators with high-throughput performance is required. Compared with crystal monochromator and grating monochromator, multilayer film monochromator has two advantages. First, by changing the periodic thickness of the multilayer film, the multilayer film can be applied to a wide band; second, the reflectivity of the multilayer monochromator is high and the integrated luminous flux is large (the ratio of the multilayer monochromator to The spectral bandwidth of the crystal monochromator is 2 orders of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/16C23C14/18C23C14/06
CPCC23C14/0635C23C14/165C23C14/185C23C14/352
Inventor 黄秋实王占山刘阳张众
Owner TONGJI UNIV
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