Crucible for silicon carbide single crystal growing close to equilibrium state and growing method of silicon carbide single crystal

Abstract

The invention relates to a crucible for a silicon carbide single crystal growing close to an equilibrium state and a growing method of the silicon carbide single crystal. The crucible comprises an outer crucible and an inner crucible, wherein the outer crucible is a heating element, and the inner crucible is a growing crucible; the separation distance between the outer crucible and the inner crucible is 5-10 millimeters. The provided crucible for the silicon carbide single crystal growing close to the equilibrium state has the advantages that the heating element and the growing crucible are separated, the outer crucible plays a role of the heating element, the inner crucible is the growing crucible, the heat of the outer crucible is transmitted into the inner crucible mainly through a radiation method, the inner crucible has the characteristics of small radial and axial temperature gradients, a novel crucible is adopted, the growth of the single crystal is performed under a condition close to the equilibrium state, so that the defect density of the grown single crystal is low, and the crucible is suitable for culturing a high-quality silicon carbide single crystal.

Description

technical field [0001] The invention relates to a crucible for growing a near-equilibrium SiC single crystal and a growth method of the SiC single crystal, belonging to the technical field of crystal growth. Background technique [0002] Silicon carbide (SiC) semiconductor, also known as wide bandgap semiconductor or third-generation semiconductor, has high hardness (second only to diamond) and high thermal conductivity (4.9 compared with the first-generation semiconductor Si and the second-generation semiconductor GaAs). W / cm·K), low thermal expansion coefficient (3.1-4.5×10 -6 / K), large forbidden band width (2.40-3.26eV), high saturation electron drift velocity (2.0-2.5×10 7 cm / s), the critical breakdown field is strong (2~3×10 6 V / cm), high chemical stability, strong radiation resistance and other excellent properties. These excellent properties enable SiC semiconductor devices to work in extreme environments of high temperature, high pressure, and strong radiation, a...

AI Technical Summary

Problems solved by technology

[0004] At present, SiC single crystal substrates have been used to prepare semiconductor devices such as high-power semiconductor lighting LEDs, high electron mobility transistors, Schottky diodes, metal oxide semiconductor field effect transistors, etc., but the performance stability and long-term reliability of the devices properties are still affected by structural defects in the substrate material

How to reduce structural defects in SiC single crystals and obtain SiC single crystals with high structural integrity is a serious challenge for crystal growth work, and it is also a long-term and arduous research topic

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