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Silicon carbide detector and its manufacturing method

A silicon carbide and detector technology, applied in the field of silicon carbide detectors and their preparation, can solve the problems of reduced signal-to-noise ratio and large dark current of devices, and achieve the effects of reducing dark current, high quantum efficiency and improving signal-to-noise ratio

Active Publication Date: 2019-12-17
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, an embodiment of the present invention provides a silicon carbide detector and its preparation method to solve the problem that the dark current of the silicon carbide ultraviolet photodetector with the absorption multiplication separation structure is sharply large near the breakdown voltage in the prior art, which causes The problem of degraded signal-to-noise ratio of the device

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  • Silicon carbide detector and its manufacturing method
  • Silicon carbide detector and its manufacturing method
  • Silicon carbide detector and its manufacturing method

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Embodiment 1

[0033] Please refer to figure 1 , the silicon carbide detector includes: a wafer, and the wafer is successively substrate 101, silicon carbide P + Layer 102, N-type silicon carbide insertion layer 103, N + Type SiC multiplication layer 104, N-type SiC absorber layer 105 and SiC N + Layer 106; the doping concentration of the N-type silicon carbide insertion layer 103 increases from bottom to top, and the doping concentration of the N-type silicon carbide absorption layer 105 decreases from bottom to top. A mesa is etched on the wafer, and the mesa is etched to the silicon carbide P + layer 102 upper surface. An N-type electrode 107 is provided on the upper surface of the mesa, and a P-type electrode 108 is provided on the upper surface of the non-mesa area, which is the area of ​​the wafer except the mesa area.

[0034] In the embodiment of the present invention, the silicon carbide detector is used for detecting ultraviolet light, and the material of the silicon carbide de...

Embodiment 2

[0050] Please refer to image 3 , a method for preparing a silicon carbide detector, comprising:

[0051] Step S301, etching the mesa on the wafer, the wafer is substrate, silicon carbide P + layer, N-type SiC insertion layer, N + Type SiC multiplication layer, N-type SiC absorber layer and SiC N + layer; the doping concentration of the silicon carbide insertion layer increases from bottom to top, the doping concentration of the silicon carbide absorption layer decreases from bottom to top, and the mesa is etched to silicon carbide P + layer upper surface;

[0052] Step S302, preparing an N-type electrode on the upper surface of the mesa;

[0053] Step S303 , preparing a P-type electrode on the upper surface of the non-mesa area; the non-mesa area is the area of ​​the wafer other than the mesa area.

[0054] Optionally, the method further includes: preparing a passivation layer on the side surfaces of the mesa and the upper surface of the non-mesa region except the P-type...

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Abstract

The present invention is applicable to the field of semiconductor technology, and provides a silicon carbide detector and a preparation method thereof. The silicon carbide detector includes: a wafer, and the wafer is sequentially composed of a substrate, a silicon carbide P + layer, N-type SiC insertion layer, N + Type SiC multiplication layer, N-type SiC absorber layer and SiC N + layer; the doping concentration of the N-type silicon carbide insertion layer increases from bottom to top, and the doping concentration of the N-type silicon carbide absorption layer decreases from bottom to top; a mesa is etched on the wafer, and the mesa is etched to the SiC P + The upper surface of the layer; the upper surface of the mesa is provided with an N-type electrode, and the upper surface of the non-mesa area is provided with a P-type electrode. The invention can reduce the dark current of the device, further improve the signal-to-noise ratio of the device, and ensure higher quantum efficiency.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, in particular to a silicon carbide detector and a preparation method thereof. Background technique [0002] Due to the absorption and scattering of ozone and other molecules in the atmosphere, ultraviolet radiation with a wavelength in the range of 100 nanometers to 280 nanometers hardly exists on the ground. With the advantages of small background interference and low false warning rate, it has important application prospects in the fields of ultraviolet early warning, ultraviolet communication, ultraviolet astronomy and other fields. [0003] Wide-bandgap semiconductor ultraviolet detectors represented by gallium nitride (GaN) and silicon carbide (SiC) do not respond to visible light and have natural visible light blindness. Compared with GaN, SiC material is more mature and has a lower defect density. It is currently the preferred material for making ultraviolet photodetectors. [000...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/103H01L31/18
CPCH01L31/1037H01L31/1812Y02E10/50C01B32/956H01L31/103H01L31/02161Y02P70/50H01L31/06H01L31/035281H01L21/02378H01L31/03529
Inventor 周幸叶冯志红吕元杰谭鑫王元刚宋旭波李佳房玉龙
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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