A kind of preparation method of high-purity ruthenium sputtering target material

A sputtering target, high-purity technology, applied in the field of powder metallurgy, can solve problems such as extremely high equipment conditions, heavy power system load, and reduced target purity, and achieve stable sputtering performance, less processing and deformation processes, Simple preparation process
CN108642464BActive Publication Date: 2020-08-28广州海普电子材料科技有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
广州海普电子材料科技有限公司
Publication Date
2020-08-28

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Abstract

The invention relates to the technical field of powder metallurgy, in particular to a preparation method of a high-purity ruthenium sputtering target. The method mainly comprises the steps of crushing, ball milling, die filling, one-way hot press molding and the like. In the die filling process, three kinds of powder with different granularities are adopted for mutual filling, and finally sinter molding is carried out. A powder metallurgy is adopted, the target can be prepared at the temperature lower than the material smelting point, the operation difficulty of equipment is greatly lowered, introduction of impurities is also effectively controlled in the preparation process, controllable preparation of target structure fineness can also be achieved by controlling the raw material high-purity ruthenium powder granularity and the sintering technology system, therefore, the target product quality stability is improved, meanwhile, the production cost is greatly reduced, and the high-performance low-cost high-purity ruthenium target with the uniform and controllable microstructure can be obtained.
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Description

technical field

[0001] The invention relates to the technical field of powder metallurgy, in particular to a method for preparing a high-purity ruthenium sputtering target. Background technique

[0002] As a key technology in the manufacture of integrated circuits and chips, magnetron sputtering coating has many advantages such as simple equipment, easy control, and high film uniformity. Among them, the quality of the sputtering target has a decisive influence on the coating effect of magnetron sputtering and the performance of semiconductor devices. Therefore, high-quality sputtering targets have become an indispensable key material for the electronic information technology industry. The film quality (such as film thickness, uniformity, etc.) formed after target sputtering will significantly affect the performance of electronic products such as integrated circuits and chips, and the film quality depends largely on the organizational characteristics of the sputtering target ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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