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bii with different hole transport layers 3 Solar cell and its preparation method

A technology of hole transport layer and solar cell, which is applied in semiconductor/solid-state device manufacturing, circuit, photovoltaic power generation, etc. It can solve the problems of device performance degradation, threats to the ecological environment and human health, and the preparation process is not simple enough to achieve good stability. high reliability, low preparation cost and good reproducibility

Inactive Publication Date: 2020-01-10
NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The active layer material of traditional perovskite solar cells is CH 3 NH 3 PB 3 The most common, however, it is toxic and poses a potential threat to the ecological environment and human health; perovskite materials are unstable to ultraviolet light, water and other factors, which accelerates the decline of device performance; CH 3 NH 3 PB 3 is through CH 3 NH 3 I and PbI 3 The ratio of the reactants obtained by the reaction needs to be strictly controlled, and annealing at a temperature of 100 ° C or higher is required, and the preparation process is not simple enough

Method used

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  • bii with different hole transport layers <sub>3</sub> Solar cell and its preparation method
  • bii with different hole transport layers <sub>3</sub> Solar cell and its preparation method
  • bii with different hole transport layers <sub>3</sub> Solar cell and its preparation method

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preparation example Construction

[0072] BiI with different hole transport layers 3A method for preparing a solar cell, comprising the steps of:

[0073] (1), prepare a transparent conductive metal oxide cathode layer on the substrate:

[0074] Sputtering metal oxide on the substrate to prepare a transparent conductive metal oxide cathode layer;

[0075] (2) Preparation of dense TiO on the transparent conductive metal oxide cathode layer 2 Electron transport layer:

[0076] Using the spraying method, dilute 1mL of 75wt% titanium diisopropoxybisacetylacetonate in isopropanol with 9mL of absolute ethanol, spray evenly on the transparent conductive metal oxide cathode layer, and then sinter to obtain dense TiO 2 Electron transport layer;

[0077] (3), in dense TiO 2 Preparation of BiI on electron transport layer 3 layer:

[0078] BiI in the glove box 3 solution and Li-TFSI doped BiI 3 solution spin coating on dense TiO 2 on the electron transport layer, and then annealed to obtain BiI 3 Layer, that is,...

Embodiment 1

[0096] Embodiment 1 (PTB7-Th, do comparative example)

[0097] will be sputtered with fluorine-doped SnO 2 (FTO) transparent conductive glass was ultrasonically cleaned twice with detergent, tap water, deionized water, acetone, and isopropanol, each time for 15 minutes, dried with nitrogen, placed on a flat furnace, and placed on the FTO substrate with a glass sheet The position of the electrode is shielded, the temperature is raised to 450°C, and then the ethanol solution of diisopropoxybisacetylacetonate titanium is sprayed at 450°C, thermally annealed at 450°C for 30 minutes in the air, and then naturally cooled to obtain dense TiO 2 electron transport layer. BiI 3 The solid particles were fully dissolved in DMF (N,N-dimethylformamide) at a concentration of 200 mg / ml to obtain a precursor solution, which was filtered with a filter head with a diameter of 22 μm. in N 2 In the glove box, the precursor solution was spin-coated on the dense TiO with an acceleration of 1500r...

Embodiment 2

[0098] Example 2 (Poly-TPD)

[0099] will be sputtered with fluorine-doped SnO 2 (FTO) transparent conductive glass was ultrasonically cleaned twice with detergent, tap water, deionized water, acetone, and isopropanol, each time for 15 minutes, dried with nitrogen, placed on a flat furnace, and placed on the FTO substrate with a glass sheet The position of the electrode is shielded, the temperature is raised to 450°C, and then the ethanol solution of diisopropoxybisacetylacetonate titanium is sprayed at 450°C, thermally annealed at 450°C for 30 minutes in the air, and then naturally cooled to obtain dense TiO 2 electron transport layer. BiI 3 The solid particles were fully dissolved in DMF (N,N-dimethylformamide) at a concentration of 200 mg / ml to obtain a precursor solution, which was filtered with a filter head with a diameter of 22 μm. in N 2 In the glove box, the precursor solution was spin-coated on the dense TiO with an acceleration of 1500rpm / s at a speed of 3000rpm...

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Abstract

The invention discloses a BiI with different hole transport layers 3 Solar cell and method for its preparation, BiI 3 The solar cell consists of a substrate, a conductive metal oxide cathode layer, an electron transport layer, BiI 3 The active light-absorbing layer, the hole transport layer and the anode layer are connected in sequence, and the hole transport material is MoO 3 or PTB7‑Th or spiro‑OMeTAD or Poly‑TPD or PBDT‑T. Compared with traditional perovskite solar cells, BiI in the present invention 3 The solar cell has the advantages of non-toxicity, simple preparation method and good stability. Bandgap smaller than BiI 3 The hole-transporting materials PTB7‑Th and PBDT‑T can absorb long-wavelength photons, thereby broadening the absorption spectrum of the device and enhancing the utilization of incident light by the cell. Furthermore, the efficiency of the cell is further enhanced by doping Li‑TFSI in the active layer to improve its morphology and electrical properties.

Description

technical field [0001] The invention relates to the field of solar cells and preparation methods thereof, in particular to a BiI with different hole transport layers 3 Solar cells and methods of making them. Background technique [0002] In the field of optoelectronic devices, the development of new materials with excellent performance, unique functions and low cost is very important. In recent years, the composite organic-inorganic material methylamine-lead-halogen structure APbX in the field of optoelectronics 3 It has attracted widespread attention because of its rapidly increasing energy conversion efficiency, and its laboratory efficiency has reached 22.1%. wxya 3 The material adopts a common solution spin-coating process, which is a low-cost optoelectronic material and may become an alternative to silicon-based batteries in the future. However, the toxicity of the material lead and APbX 3 The instability problem restricts its large-scale commercial development: le...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K85/60H10K30/151H10K2102/00Y02E10/549Y02P70/50
Inventor 丁勇马爽戴松元谭占鳌
Owner NORTH CHINA ELECTRIC POWER UNIV (BAODING)
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