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A metal/semiconductor composite photocatalyst and its preparation and application

A semiconductor and composite light technology, applied in the field of photocatalytic materials, can solve the problems of easy leaching and loss of metal component Pt, shielding hydrogen production reaction active sites, low hydrogen production overpotential advantages, etc., and achieve high photocatalytic water decomposition hydrogen production activity , good cycle stability, obvious effect

Active Publication Date: 2021-03-26
FUZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Currently commonly used metal Pt and semiconductor TiO 2 The composite method is to simply support or deposit metal Pt on TiO 2 On the surface, in the composite material obtained by the above method, in the liquid phase reaction, the metal component Pt has the problem of easy leaching and loss, resulting in low stability of the composite material
If Pt nanoparticles are wrapped inside the semiconductor component, the hydrogen production reaction active sites on the surface will be blocked, resulting in the inability to take advantage of its lower hydrogen production overpotential

Method used

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  • A metal/semiconductor composite photocatalyst and its preparation and application
  • A metal/semiconductor composite photocatalyst and its preparation and application
  • A metal/semiconductor composite photocatalyst and its preparation and application

Examples

Experimental program
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Effect test

Embodiment 1

[0039] Metal / semiconductor composite photocatalyst SiO 2 @TiO 2 / Preparation of Pt-SA

[0040] (1) Add 2 mL of ammonia water (30% mass fraction) and 1 mL of deionized water into 40 mL of isopropanol, mix and stir evenly, add 2 mL of tetraethyl orthosilicate, and react at room temperature for 2 h to obtain SiO with an average diameter of 400 nm 2 nanospheres;

[0041] (2) Weigh 0.1 g of SiO 2 Nanospheres, dispersed in 2 mL of ethanol solution, ultrasonically dispersed evenly, added 0.1 mL of n-butyl titanate, stirred for 20 min;

[0042] (3) Dissolve 0.3 g of polyvinylpyrrolidone (PVP) in a solution containing 20 mL of ethanol and 1 mL of deionized water, mix and stir evenly, add the obtained solution to the above solution, and mix and stir for 1 h at room temperature. The corresponding samples were obtained by centrifugation, washed twice with ethanol and then dried at 60 °C to obtain SiO 2 @TiO 2 composite materials;

[0043] (4) Weigh 0.1 g of SiO 2 @TiO 2 The com...

Embodiment 2

[0065] Metal / semiconductor composite photocatalyst SiO 2 @TiO 2 / Preparation of Pt-SA

[0066] (1) Add 2 mL of ammonia water (30% mass fraction) and 1 mL of deionized water into 40 mL of isopropanol, mix and stir evenly, add 2 mL of tetraethyl orthosilicate, and react at room temperature for 2 h to obtain SiO with an average diameter of 400 nm 2 nanospheres;

[0067] (2) Weigh 0.1 g of SiO 2 Nanospheres, dispersed in 2 mL ethanol solution, ultrasonically dispersed evenly, added 0.08 mL n-butyl titanate, stirred for 15 min;

[0068] (3) Dissolve 0.28 g of polyvinylpyrrolidone (PVP) in a solution containing 20 mL of ethanol and 1 mL of deionized water, mix and stir evenly, add the obtained solution to the above solution, and mix and stir for 1.5 h at room temperature. The corresponding samples were obtained by centrifugation, washed twice with ethanol and then dried at 55 °C to obtain SiO 2 @TiO 2 composite materials;

[0069] (4) Weigh 0.1 g of SiO 2 @TiO 2 The compo...

Embodiment 3

[0073] Metal / semiconductor composite photocatalyst SiO 2 @TiO 2 / Preparation of Pt-SA

[0074] (1) Add 2 mL of ammonia water (30% mass fraction) and 1 mL of deionized water into 40 mL of isopropanol, mix and stir evenly, add 2 mL of tetraethyl orthosilicate, and react at room temperature for 2 h to obtain SiO with an average diameter of 400 nm 2 nanospheres;

[0075] (2) Weigh 0.1 g of SiO 2 Nanospheres, dispersed in 2 mL ethanol solution, ultrasonically dispersed evenly, added 0.12 mL n-butyl titanate, stirred for 25 min;

[0076] (3) Dissolve 0.32 g of polyvinylpyrrolidone (PVP) in a solution containing 20 mL of ethanol and 1 mL of deionized water, mix and stir evenly, add the obtained solution to the above solution, and mix and stir for 1 h at room temperature. The corresponding samples were obtained by centrifugation, washed twice with ethanol and then dried at 65 °C to obtain SiO 2 @TiO 2 composite materials;

[0077] (4) Weigh 0.1 g of SiO 2 @TiO 2 The composi...

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Abstract

The invention discloses a metal / semiconductor composite photocatalyst and its preparation and application. Using silica as a carrier, a silica@titanium dioxide core-shell structure (SiO 2 @TiO 2 ), after positively electrifying its surface, it performs Coulomb force self-assembly with the electronegative metal platinum nanoparticles on the surface to obtain platinum nanoparticles in SiO 2 @TiO 2 Metal / semiconductor composite photocatalyst SiO uniformly distributed on the surface 2 @TiO 2 / Pt‑SA. The method of the present invention optimizes the use of platinum nanoparticles in SiO 2 @TiO 2 The spatial distribution of the surface can effectively improve the SiO 2 @TiO 2 / Pt‑SA’s visible light absorption properties and its activity and stability in the photocatalytic water decomposition and hydrogen production reaction under ultraviolet-visible light illumination. This method is simple, effective and easy to implement, which is conducive to the construction of a wide spectrum response that can be used for solar energy conversion. Highly efficient metal / semiconductor composite photocatalytic materials.

Description

technical field [0001] The invention belongs to the field of photocatalytic materials, and in particular relates to a metal / semiconductor composite photocatalyst and its preparation and application. Background technique [0002] Photocatalytic technology provides a possible green way to utilize solar energy to alleviate the increasingly prominent energy crisis, and the conversion of solar energy into hydrogen energy has received more and more research attention. Among the commonly used photocatalysts, titanium dioxide (TiO 2 ) has become one of the most widely studied semiconductor photocatalysts due to its chemical stability, low cost and easy availability. However, due to TiO 2 Wide band gap (3.2 eV) and high recombination rate of electrons and holes, which cannot absorb visible light, and TiO alone 2 The photocatalytic activity is low. How to improve TiO 2 The light absorption properties and photocatalytic activity of photocatalytic materials have always been one of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/42C01B3/04
CPCC01B3/042B01J23/002B01J23/42B01J2523/00B01J35/39B01J2523/47B01J2523/828B01J2523/41Y02E60/36Y02P20/133
Inventor 徐艺军张楠唐紫蓉
Owner FUZHOU UNIV
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