Method for preparing indium hydroxide

A technology of indium hydroxide and indium flowers, which is applied in the field of preparation of indium hydroxide, can solve the problems of hydrothermal synthesis method growth temperature limitation, difficulty in realizing industrial production, difficulty in controlling process parameters, etc., and achieve high practical value, short cycle, less reunion effect

Pending Publication Date: 2018-11-13
XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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Problems solved by technology

[0005] However, most of the above methods have many synthetic process steps, many process parameters are difficult to control, and have high requirements for equipment, resulting in long production cycle.
For example, the chemical vapor deposition method needs to be carried out at high temperature and high pressure or in a vacuum state, which requires high equipment

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  • Method for preparing indium hydroxide

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preparation example Construction

[0029] The present invention proposes a kind of preparation method of indium hydroxide, comprises the following steps:

[0030] S1. Melt the indium ingot at 200-400°C, pour the molten liquid into a container filled with pure water, and spray pure water on the poured molten liquid at the same time to obtain indium flowers, and filter the indium flowers with a screen;

[0031] S2. Dissolving the filtered indium flowers with nitric acid to obtain a mixed solution of indium nitrate, diluting the mixed solution of indium nitrate with water until the molar concentration of indium is 0.1-5.0 mol / L;

[0032] S3, adding a water-soluble acid amine dispersant to the mixed solution, and then adding an alkaline aqueous solution to generate a precipitate to obtain a hydroxide precursor slurry;

[0033] S4, transfer the slurry to the storage tank and wash it with ceramic membrane equipment;

[0034] S5. Spray drying the washed slurry to obtain dried indium hydroxide powder.

[0035] In som...

Embodiment 1

[0047]Melt the weighed indium ingot at 200°C, pour the molten liquid into a container filled with pure water, and spray pure water on the poured molten liquid at the same time to obtain indium flowers, and filter the indium flowers with a sieve; Take the indium flower filtered by the sieve, add nitric acid to dissolve it to obtain an indium nitrate solution, dilute the indium nitrate solution with water to make the molar concentration of indium 3.0mol / L, and add polyacrylamine with a theoretical precursor hydroxide mass of 0.5% at the same time , 12wt% ammonia solution was added dropwise at 30 ml / min under stirring at 60°C, the final pH was 11, aged for 12 hours, the slurry was transferred to a storage tank for washing with ceramic membrane equipment, and pure water was added for circular washing until the conductivity The rate is 30.3μs / cm, and the washed slurry is spray-dried by a centrifugal spray dryer. The inlet air temperature of the centrifugal spray dryer is 300°C, and ...

Embodiment 2

[0049] Melt the weighed indium ingot at 300°C, pour the molten liquid into a container filled with pure water, and spray pure water on the poured molten liquid at the same time to obtain indium flowers, and filter the indium flowers with a sieve; Take the indium flowers filtered by the sieve, add nitric acid to dissolve to obtain an indium nitrate solution, dilute the indium nitrate solution with water to make the molar concentration of indium 2.0mol / L, and add polyacrylamine with a theoretical precursor hydroxide mass of 0.5% at the same time , under stirring at 25°C, add 5wt% ammonia solution dropwise at 50 ml / min, the final pH is 8.0, age for 12 hours, transfer the slurry to a storage tank and wash it with a ceramic membrane equipment, add pure water for circular washing, and wash until the conductivity The rate is 8.5μs / cm, and the washed slurry is spray-dried by a centrifugal spray dryer. The inlet air temperature of the centrifugal spray dryer is 250°C, and the outlet air...

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Abstract

The invention relates to a method for preparing indium hydroxide. The method comprises the following steps: S1, melting an indium ingot at a temperature of 200-400 DEG C, pouring the melting liquid into a container filled with purified water, spraying the purified water onto the poured melting liquid to obtain indium flower, and filtering the indium flower by a screen; S2, dissolving the filteredindium flower with nitric acid to obtain an indium nitrate mixed solution, diluting the indium nitrate mixed solution with water until the molar concentration of indium is 0.1-5.0mol/L; S3, adding a water-soluble acid amide dispersing agent into the mixed solution, and adding an alkaline aqueous solution to produce a precipitate so as to obtain hydroxide precursor slurry; S4, transferring the slurry into a storage tank to be washed by ceramic membrane equipment; S5, performing spray drying on the washed slurry, thereby obtaining the dried indium hydroxide powder. With the adoption of a combination of chemical precipitation and spray drying, the method disclosed by the invention has the characteristics of being simple in process, short in period, capable of easily realizing industrial production and the like, and the product is uniform in granularity, excellent in dispersity, less in agglomeration and high in purity.

Description

technical field [0001] The invention relates to the field of ITO target material preparation, in particular to a method for preparing indium hydroxide. Background technique [0002] Indium Hydroxide (In(OH) 3 ) is an extended product of indium. Indium hydroxide is the precursor for manufacturing indium oxide or compound powder containing indium oxide, which can be used to manufacture ITO targets for sputtering that form ITO films (composite oxides with indium-tin as the main component) material. [0003] ITO film is a transparent electrode film widely used in display devices such as solar cells and liquid crystal displays. With the rapid development of global digital technology, today's optoelectronic devices are gradually developing towards personalization, ultra-large and special-shaped flat display, and the demand for transparent conductive films such as sputtering targets has increased significantly. Indium hydroxide is used as a transparent conductive film. The deman...

Claims

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Application Information

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IPC IPC(8): C01G15/00
CPCC01G15/00C01P2004/03C01P2006/80
Inventor 钟小华童培云朱刘
Owner XIANDAO THIN FILM MATERIALS GUANGDONG CO LTD
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