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ZnMgO thin film and preparation method thereof

A thin film and compound technology, applied in the field of ZnMgO thin film and its preparation, can solve the problems of unfavorable ultraviolet detection devices, flat absorption cut-off edge, etc., and achieve the effects of steep absorption cut-off edge, simple preparation process and low growth temperature.

Active Publication Date: 2018-12-07
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, when growing ZnMgO materials, due to the particularity of the material, it is often faced with phase separation, or component broadening, resulting in a flattened absorption cut-off edge, which is very unfavorable for the material application and the preparation of ultraviolet detection devices.

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  • ZnMgO thin film and preparation method thereof

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[0026] The present invention also provides a method for preparing the above-mentioned ZnMgO thin film, comprising: using an organic zinc compound as a zinc source, an organic magnesium compound as a magnesium source, and growing ZnMgO on a substrate in a metal organic compound chemical vapor deposition device fed with oxygen film.

[0027] Among them, the present invention has no special limitation on the sources of all raw materials, which can be commercially available.

[0028] The organozinc compound is an organozinc compound well known to those skilled in the art, and there is no special limitation. In the present invention, it is preferably a dialkylzinc, more preferably a dialkylzinc with an alkyl carbon number of 1 to 5. Zinc, more preferably diethylzinc and / or dimethylzinc; The organomagnesium compound is an organomagnesium compound well-known to those skilled in the art, and there is no special limitation. In the present invention, it is preferably diethylmagnesium an...

Embodiment 1

[0038] 1.1 Use trichlorethylene, acetone, and ethanol to clean the sapphire substrate respectively, and then dry it with dry nitrogen.

[0039] 1.2 Put the sapphire substrate in step 1.1 into the MOCVD growth equipment, adjust the growth temperature to 550°C, and the vacuum degree of the growth chamber to 2×10 4 Pa, using diethylzinc as the zinc source, dimethylmagnesium as the magnesium source, the molar concentration ratio of zinc and magnesium is adjusted by using different high-purity nitrogen carrier gas ratios, and the oxygen flow rate is 550mL / min. The carrier gas flow rate of the zinc-based pipeline is 16mL / min, and the carrier gas flow rate of the dimethylmagnesium pipeline is 50mL / min.

[0040] 1.3 After growing for 2 hours, turn off the organic source, lower the temperature at a rate of 5°C / min, and finally lower it to room temperature, take out the substrate, and obtain a ZnMgO film with a molar ratio of Zn to Mg in the film of 3:7.

[0041] Utilize scanning elect...

Embodiment 2

[0045] 2.1 Use trichlorethylene, acetone, and ethanol to clean the sapphire substrate respectively, and then dry it with dry nitrogen.

[0046] 2.2 Put the sapphire substrate in step 2.1 into the MOCVD growth equipment, adjust the growth temperature to 550°C, and the vacuum degree of the growth chamber to 2×10 4 Pa, using diethylzinc as the zinc source, dimethylmagnesium as the magnesium source, the molar concentration ratio of zinc and magnesium is adjusted by using different high-purity nitrogen carrier gas ratios, and the oxygen flow rate is 550mL / min. The carrier gas flow rate of the zinc-based pipeline was 16mL / min, and the carrier gas flow rate of the dimethylmagnesium pipeline was 80mL / min.

[0047] 2.3 After growing for 2 hours, turn off the organic source, lower the temperature at a rate of 5°C / min, and finally lower it to room temperature, take out the substrate, and obtain a ZnMgO film. The molar ratio of Zn to Mg in the film is 1.8:8.2.

[0048] The ultraviolet-vi...

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Abstract

The invention provides a preparation method of a ZnMgO thin film. The preparation method includes the step of taking an organic zinc compound as a zinc source and an organic magnesium compound as a magnesium source and enabling a ZnMgO thin film to grow on a substrate in a metal organic compound chemical vapor deposition apparatus to which oxygen is introduced. Compared with the prior art, the method has the advantages that a metal organic compound chemical vapor deposition method is adopted to prepare a ZnMgO thin film, and the growth temperature is low, so that the prepared ZnMgO thin film has the characteristics of high crystalline quality, no phase separation, steep absorption edge and the like. The preparation method of the invention has potential application prospects in preparationmethods of photoelectric devices. Moreover, the preparation process is simple and the reaction procedure is easy to control.

Description

technical field [0001] The invention belongs to the technical field of materials, and in particular relates to a ZnMgO thin film and a preparation method thereof. Background technique [0002] Ultraviolet detection technology can be used in military communications, missile tail flame detection, fire early warning, environmental monitoring, biological effects, etc., and has a wide range of applications in both military and civilian applications. Due to the strong absorption of the atmosphere, ultraviolet rays with a wavelength below 280nm in solar radiation are almost non-existent on the surface of the earth. This ultraviolet band is vividly called the solar blind band. The solar-blind ultraviolet detector working in this band is not interfered by solar radiation, has higher sensitivity, and has outstanding advantages in weak signal detection. [0003] At present, the ultraviolet detectors that have been put into commercial use mainly include silicon detectors, photomultipli...

Claims

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Application Information

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IPC IPC(8): H01L21/205H01L31/18H01L31/0296H01L31/09
CPCH01L21/02554H01L21/0262H01L31/02966H01L31/09H01L31/1832Y02P70/50
Inventor 陈星刘可为李炳辉张振中申德振
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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