A method for preparing single-layer multilayer graphene pyroelectric detector by laser ablation

A multi-layer graphene and pyroelectric detector technology, which is applied in the manufacture/processing of thermoelectric devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as complex preparation processes, and achieve simple overall structure and detection spectrum range The effect of wide, unique electrical properties

Active Publication Date: 2022-07-12
SHANGHAI UNIVERSITY OF ELECTRIC POWER
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  • Abstract
  • Description
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Problems solved by technology

[0005] Chinese patent CN104979464B discloses a flexible thermoelectric conversion device based on graphene heterojunction, including a flexible substrate layer, a dielectric layer grown sequentially on the flexible substrate layer, a first graphene layer, a second graphene layer, a first graphite The ene layer and the second graphene layer are overlapped to form a heterojunction. The first metal electrode is grown on the first graphene layer, and the second metal electrode is grown on the second graphene layer. The patent obtains graphite through a standard mechanical exfoliation process. Graphene, and find a single layer of graphene through an optical microscope, and measure the Raman scattering spectrum through a microscope to determine the actual number of layers of the selected graphene, and then transfer it to the dielectric layer by transfer technology, the preparation process is more complicated

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  • A method for preparing single-layer multilayer graphene pyroelectric detector by laser ablation
  • A method for preparing single-layer multilayer graphene pyroelectric detector by laser ablation
  • A method for preparing single-layer multilayer graphene pyroelectric detector by laser ablation

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Embodiment 1

[0031] like figure 1 shown, the graphene monolayer multilayer pyroelectric detector fabricated by laser ablation, refer to Figure 2-4 , the preparation steps of the thermoelectric device are: growing an insulating medium layer 2 on the substrate material 1, transferring a multilayer graphene layer 3 on the insulating medium layer 2, and carrying out laser direct writing burning on the multilayer graphene layer 3 After the ablation, the multi-layer graphene layer 3 becomes a single-layer graphene layer 4.

[0032] A first metal electrode 5 is deposited on one end of the multi-layer graphene layer 3 that has not been ablated, and a second metal electrode is deposited on one end of the thin film from the multi-layer graphene layer 3 to the single-layer graphene layer 4 after laser ablation. electrode 6. Based on the characteristics of the multi-layer graphene film being thinned into a single-layer graphene film after laser ablation, a multi-layer-single-layer graphite heterost...

Embodiment 2

[0036] In this embodiment, the substrate material is flexible polyethylene naphthalate, the dielectric layer is a silicon nitride dielectric layer, and the thickness of the silicon nitride dielectric layer is 100 nm; the thickness of the multilayer graphene 3 is 20 nm.

[0037] During preparation, multi-layer graphene was obtained by a standard mechanical lift-off process, and then transferred to the silicon nitride dielectric layer, followed by ablation of the multi-layer graphene layer with a laser energy of 20 mW, and finally, by electron beam evaporation method, respectively. A layer of metal diaphragm is deposited on one end of the multi-layer graphene and one end of the single-layer graphene, and then a first metal electrode and a second metal electrode are formed by a peeling process. In this embodiment, the thickness of the first metal electrode and the second metal electrode are both 100 nm, and the materials are both aluminum. The rest are the same as in Example 1. ...

Embodiment 3

[0039] In this embodiment, the material of the substrate is polyimide, the dielectric layer is an aluminum oxide dielectric layer, and the thickness of the aluminum oxide dielectric layer is 200 nm; a multi-layer two-dimensional material layer is transferred on the dielectric layer, and the two-dimensional material The layer is a multilayer molybdenum disulfide film, and the thickness of the molybdenum disulfide layer is 16 nm.

[0040] During the preparation, the multilayer molybdenum disulfide thin film was prepared by a high temperature vacuum synthesis method, and then transferred to the alumina dielectric layer, and then the multilayer molybdenum disulfide thin film was irradiated by a laser, and the laser energy was 10 mW. Finally, a metal diaphragm is deposited on one end of the multi-layer molybdenum disulfide film 3 that has not been ablated and the single-layer molybdenum disulfide film that has been ablated by a thermal evaporation method, and then a first metal film...

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Abstract

The invention relates to a method for preparing a single-layer multi-layer graphene thermoelectric detector by laser ablation, comprising the following steps: growing an insulating medium layer on a substrate material; transferring a layer of multi-layer graphene film on the insulating medium layer ; carry out laser ablation on part of the multi-layer graphene film, so that part of the multi-layer graphene film becomes a single-layer graphene film; deposit a first metal electrode at one end of the unablated multi-layer graphene film, A second metal electrode is deposited on one end of the single-layer graphene film obtained after laser ablation, so as to obtain a single-layer multi-layer graphene pyroelectric detector. Due to the difference in Seebeck coefficient between multi-layer graphene and single-layer graphite, when light is irradiated, due to the difference in thermal conductivity between the substrate and the graphene layer, there will be a temperature difference at the interface of the heterojunction, resulting in a thermovoltage, which can be generated in the first The thermal current is detected at the second metal electrode, and the construction of the pyroelectric detector has the advantages of simple manufacturing method, small size and high detection sensitivity.

Description

technical field [0001] The invention relates to the technical field of graphene pyroelectric detectors, in particular to a method for preparing single-layer multi-layer graphene pyroelectric detectors by laser ablation. Background technique [0002] Compared with traditional semiconductor detectors, graphene materials have a unique zero-bandgap band structure and electrical properties of near-ballistic transport. Compared with traditional semiconductor detectors, the detectors constructed have a wide detection spectral range, fast response speed and high cut-off frequency. Multi-layer graphene and single-layer graphene have different energy band structures and density of states. When laser ablation is performed, the interlayer thermal conductivity of multi-layer graphene is poor, and heat accumulates between layers, and multi-layer graphene will be destroyed. Oxidation, the thickness is reduced, and the number of graphene layers is reduced; when the thickness of graphene is ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/34
CPCH10N10/01Y02P70/50
Inventor 汤乃云
Owner SHANGHAI UNIVERSITY OF ELECTRIC POWER
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