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A method for transferring graphene using fullerenes

A technology of graphene and fullerene, applied in chemical instruments and methods, carbon compounds, inorganic chemistry, etc., can solve the problems of organic pollution of graphene film and affect the application effect of graphene film, achieve high cleanliness, reduce organic pollution effect

Active Publication Date: 2021-08-10
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such a method will introduce organic pollution on the surface of the graphene film due to the repeated infiltration of the solution, especially when removing the polymethyl methacrylate transfer layer, which will introduce organic pollution on the surface of the graphene film, which will affect the application effect of the graphene film in the fields of biology and other fields.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] The graphene transferred in this embodiment was grown on the copper foil growth substrate by chemical vapor deposition, and the fullerene transfer layer was prepared by thermal evaporation, and the fullerene transfer layer was removed under dry conditions by evaporation, and the obtained graphite The thickness of the ene layer is 1 to 2 layers, the size of the growth substrate is 1×2 cm, and the thickness is 0.05 mm.

[0029] The copper foil is placed in a chemical vapor deposition apparatus to grow graphene. Subsequently, the copper foil-graphene composite was placed in a vacuum coating machine, the heating temperature was 500° C., and a 50 nm-thick fullerene film was thermally evaporated. And suspending the obtained copper foil-graphene-fullerene composite film on the surface of the corrosion solution, the corrosion solution is a ferric chloride solution with a mass fraction of 20%, the solution is heated to 65 ° C and maintained at this temperature for 5 hours , the...

Embodiment 2

[0032] When the graphene transferred in this embodiment is grown on the aluminum foil growth substrate by chemical vapor deposition method, the fullerene transfer layer is prepared by chemical vapor deposition method, and the graphene transfer layer is removed by evaporation method in dry method, and the thickness of the graphene layer obtained is 1 to 2 layers, the size of the growth substrate is 1×2cm, and the thickness is 0.05mm.

[0033] Aluminum foil is placed in a chemical vapor deposition apparatus to grow graphene. Then put the aluminum foil-graphene composite back into the chemical vapor deposition equipment to grow a fullerene film with a thickness of 100nm. After repeatedly wiping the other side of the aluminum foil with absorbent cotton dipped in a small amount of dilute hydrochloric acid, the obtained aluminum foil-graphene-fullerene composite film is suspended on the surface of the corrosion solution. The corrosion solution is Kohler's reagent, and the formula i...

Embodiment 3

[0036] The graphene transferred in this embodiment is grown on the nickel foil growth substrate by chemical vapor deposition, the fullerene transfer layer is prepared by chemical vapor deposition, and the graphene transfer layer is removed by evaporation in a dry method, and the graphene layer obtained The thickness is 1 to 2 layers, the growth substrate size is 1×2cm, and the thickness is 0.05mm.

[0037] Aluminum foil is placed in a chemical vapor deposition apparatus to grow graphene. Then the nickel foil-graphene composite was placed back in the chemical vapor deposition equipment to grow a fullerene film with a thickness of 100nm. The obtained nickel foil-graphene-fullerene composite film is suspended on the surface of the corrosion solution. The proportion of the corrosion solution is 5% ferric chloride, 10% acetic acid, 4% hydrogen peroxide, and the balance is deionized water. Keep the composite film and corrosion solution for 10 hours, and the nickel foil is complete...

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PUM

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Abstract

The invention discloses a method for transferring graphene by utilizing fullerene, comprising the following steps: 1) attaching a fullerene film on the graphene attached to a growth substrate to obtain a growth substrate-graphene-fullerene composite structure 2) the growth substrate-graphene-fullerene composite structure is placed in the growth substrate corrosive solution, and the growth substrate is removed; 3) clean graphene-fullerene composite film is obtained after cleaning, and the graphene-fullerene is The composite film is placed on the target substrate to obtain the target substrate-graphene-fullerene composite; 4) remove the fullerene layer in the target substrate-graphene-fullerene composite, i.e. obtain the graphite attached to the target substrate alkene to complete the transfer. The invention adopts fullerene as the transfer layer, which can reduce the organic pollution introduced when the transfer layer is removed, and ensures that the graphene with high cleanliness is transferred to the target substrate, especially when it is transferred to the substrate with through holes, it can obtain More complete suspended graphene films.

Description

technical field [0001] The invention relates to a method for transferring graphene by using fullerene, and belongs to the technical field of graphene transfer. Background technique [0002] Graphene is a carbon atom with sp 2 Two-dimensional carbon nanomaterials composed of hybrid orbitals in a hexagonal honeycomb lattice were initially isolated from graphite by micromechanical exfoliation. The material has excellent optical, electrical and mechanical properties, is the material with the fastest electron transfer rate at room temperature, and is also the thinnest, strongest and hardest film material known, so it is widely used in micromachining, optoelectronics, biomedicine, etc. There are important application prospects in other fields. [0003] At present, the preparation methods of graphene mainly include mechanical exfoliation, graphene oxide reduction, SiC epitaxial growth, and chemical vapor deposition (CVD). Among them, the existing process of CVD method is mature,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/194
CPCC01B32/194
Inventor 涂景傅继业徐喆芸巴龙陆祖宏
Owner SOUTHEAST UNIV