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A full back electrode cell and its high-efficiency light trapping and selective doping manufacturing method

A technology of full back electrode and manufacturing method, which is applied in the direction of final product manufacturing, sustainable manufacturing/processing, circuits, etc., can solve the problems of high current density and imperfect long-wave band, and achieve low cost, good surface passivation effect, The effect of excellent light trapping structure

Active Publication Date: 2019-10-11
CHANGZHOU UNIV +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The optical loss of this structure includes front surface reflection, anti-reflection film parasitic absorption, long-wavelength imperfect optical trap, free carrier absorption, etc.
[0004] In addition, since the front surface of the IBC battery is not shielded by metal grid lines, the current density is relatively large.

Method used

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  • A full back electrode cell and its high-efficiency light trapping and selective doping manufacturing method
  • A full back electrode cell and its high-efficiency light trapping and selective doping manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] (1), select an n-type single crystal silicon wafer with a resistivity of 2.5Ωcm, use a high-concentration (20%) NaOH etching solution, polish it at a temperature of 90° C. for 1 minute, and clean it with a mixed solution of HF and HCl for 2 minutes;

[0032] (2), using BBr 3 The source is doped with boron, pre-deposition parameters: 800°C, 20min, N 2 The air flow is 13slm,O 2 Airflow 1500sccm, BBr 3 The flow rate is 150sccm, forming p on the entire silicon wafer surface + At the same time, a layer of borosilicate glass (BSG) dielectric layer is formed on the surface of the silicon wafer.

[0033] (3) Use a picosecond laser to remove the BSG and p-type layers on the surface of the area that needs to be doped with phosphorus on the back, and clean it with deionized water to remove some floating dust formed by laser irradiation;

[0034] (4), with POCl 3 Perform phosphorous doping, pre-deposit 700°C, 40min, N 2 The air flow is 15slm,O 2 Airflow 1800sccm, POCl 3 The...

Embodiment 2

[0046] Preparation:

[0047] Step (2), utilize BBr 3 Source for boron doping, pre-deposition parameters: 750°C, 25min, N 2 The air flow is 13slm,O 2 Airflow 1500sccm, BBr 3 The flow rate is 150sccm, the high temperature propulsion temperature is 1000°C, and the propulsion time is 15min;

[0048] Step (4), with POCl 3 Phosphorus doping, pre-deposition 800°C, 40min, N 2 The air flow is 15slm,O 2 Airflow 1800sccm, POCl 3 The flow rate is 400 sccm. The advancing temperature is 950°C, and the advancing time is 10 minutes.

[0049] Others are the same as embodiment 1.

Embodiment 3

[0051] Preparation:

[0052] Step (11), using the atomic layer deposition (ALD) method to simultaneously prepare an ultra-thin silicon oxide layer on the front and back, specifically: first pass trimethylsilane into the deposition chamber for 10 seconds, and then inject Access to N 2 Gas, purge time 10s. Ozone O was introduced into the chamber 3 , the passage time is 10s, and then pass N into the chamber 2 gas, the purge time is 10s, and the deposition temperature is 300°C. This is a cycle. Repeat 300 times.

[0053] Others are the same as embodiment 1

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Abstract

The invention belongs to the technical field of solar cell manufacturing, in particular to a high-efficiency trapping and selective doping manufacturing method of a full-back electrode battery. Ultra-thin silicon oxide passivation film is prepared by micro-nano structure combined with atomic layer deposition technology to reduce the light reflection and parasitic light absorption on the front surface, while ensuring the passivation of the front surface. In order to solve the problem of large metal area recombination on the back, selective doping is adopted and picosecond laser is utilized on aphosphor doping layer to ensure heavy doping on the surface of n + layer, the depth of heavy doping layer is strictly controlled, which ensures good ohmic contact between phosphorus doped layer and metal contact region, and does not cause serious carrier recombination due to heavy doping. Crystalline silicon is further bulk passivated by ultra-thin silicon oxide passivation followed by low temperature annealing in hydrogen atmosphere. Al metal electrode is fabricated by thermal evaporation method. Under laser irradiation, Al forms good ohmic contact with p + and n + + through silicon oxide.

Description

technical field [0001] The invention belongs to the technical field of solar cell manufacturing, and in particular relates to a high-efficiency light-trapping and selective doping manufacturing method of an all-back electrode cell. Background technique [0002] Solar power generation technology is an important field for the development of new energy, and improving the output power per unit area of ​​solar cells is the ultimate goal of solar cell technology progress. Back contact (IBC) solar cells, the positive and negative metal electrodes are interdigitated on the non-light-receiving side of the cell. There is no metal electrode on the light-receiving surface of the battery, which can eliminate the optical loss caused by the shading of the metal electrode and increase the short-circuit current; all electrodes are distributed in an interdigitated shape on the back of the battery, and the larger metallization area improves battery filling. Factor; thus can improve the conver...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/068H01L31/0236H01L31/0216
CPCH01L31/02167H01L31/02168H01L31/02363H01L31/0682H01L31/1804H01L31/1868H01L31/022441Y02E10/547Y02P70/50
Inventor 丁建宁袁宁一高纪凡张学玲
Owner CHANGZHOU UNIV
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