Porphyrin memristor with biological synapse analogue function, preparation method and application thereof

A technology for simulating function and memristor, which is applied in the field of memristor with biological synapse simulation function and its preparation, which can solve the bottleneck of tolerance, reliability, batch repeatability, and is not suitable for flexible and high-energy-consuming manufacturing processes. , the slow progress of materials and devices, etc., to achieve the effect of high output repeatability, easy structure, and high yield

Pending Publication Date: 2019-02-15
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since then, memristors have become a new research hotspot in the fields of electronics, information, and materials due to their novel characteristics. The application of smart devices has attracted much attention and has been deeply researched, but memristors still have commercial bottlenecks in terms of device performance, including tolerance, reliability, and batch repeatability
[0003] At present, important progress has been made in inorganic memristors, but there are still many problems in inorganic memristors, such as low level of processing mechanism, poor device repeatability, poor stability, and not suitable for flexible and high energy consumption manufacturing processes, etc.
Compared with inorganic mater

Method used

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  • Porphyrin memristor with biological synapse analogue function, preparation method and application thereof
  • Porphyrin memristor with biological synapse analogue function, preparation method and application thereof
  • Porphyrin memristor with biological synapse analogue function, preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] (1) Carry out standard substrate cleaning on ITO conductive glass, firstly through acetone, ethanol, ultra-clean water cleaning, then through acetone, ethanol, ultra-clean water three-step ultrasonic cleaning, then dry the substrate, and place Dry in an oven at 120°C for 20 minutes;

[0040] (2) Treat the dried ITO conductive glass with ultraviolet and ozone for 5 minutes;

[0041] (3) Put the treated ITO conductive glass into the vacuum evaporation equipment, and the pressure in the vacuum chamber is lower than 5×10 - 5 After Pa, begin to vapor-deposit the dielectric layer, the modification layer and the metal cathode in sequence. The material of the dielectric layer is porphyrin small molecule TPP, and the evaporation rate is about The thickness of the porphyrin layer is about 60nm; the vacuum evaporation material of the modification layer is aluminum, and the aluminum oxide Al is formed through the autoxidation reaction. 2o 3-x , the evaporation rate is controll...

Embodiment 2

[0045] (1) Carry out standard substrate cleaning on ITO conductive glass, firstly through acetone, ethanol, ultra-clean water cleaning, then through acetone, ethanol, ultra-clean water three-step ultrasonic cleaning, then dry the substrate, and place Dry in an oven at 120°C for 20 minutes;

[0046] (2) Treat the dried ITO conductive glass with ultraviolet and ozone for 5 minutes;

[0047] (3) Put the treated ITO conductive glass into the vacuum evaporation equipment, and the pressure in the vacuum chamber is lower than 5×10 - 5 After Pa, start to vapor-deposit the dielectric layer, the modification layer and the metal cathode in sequence. The material of the dielectric layer is porphyrin polymer, and the evaporation rate is about The thickness of the porphyrin layer is about 60nm; the vacuum evaporation material of the modification layer is titanium, which generates titanium oxide through autoxidation reaction, and the evaporation rate is controlled at The thickness is ab...

Embodiment 3

[0050] (1) Carry out standard substrate cleaning on ITO conductive glass, firstly through acetone, ethanol, ultra-clean water cleaning, then through acetone, ethanol, ultra-clean water three-step ultrasonic cleaning, then dry the substrate, and place Dry in an oven at 120°C for 20 minutes;

[0051] (2) Treat the dried ITO conductive glass with ultraviolet and ozone for 5 minutes;

[0052] (3) Put the treated ITO conductive glass into the vacuum evaporation equipment, and the pressure in the vacuum chamber is lower than 5×10 - 5 After Pa, begin to vapor-deposit the dielectric layer, the modification layer and the metal cathode in sequence, the material of the dielectric layer is , and the evaporation rate is about The thickness of the porphyrin layer is about 60nm; the vacuum evaporation material of the modification layer is indium gallium zinc, which generates indium gallium zinc oxide through self-oxidation reaction, and the evaporation rate is controlled at The thicknes...

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Abstract

The invention discloses a porphyrin memristor with a biological synapse analogue function, a preparation method and application thereof. The structure of the device of the porphyrin memristor with thebiological synapse analogue function comprises a metal cathode, a resistive layer and ITO conducting glass from top to bottom in sequence; the resistive layer comprises a modified layer and a dielectric layer, and the dielectric layer is a porphyrin layer. According to the porphyrin memristor with the biological synapse analogue function, the organic memristor belongs to a typical ion transportation mechanism, the porphyrin memristor has the characteristic of biological synapse analogue function and has the advantages of large area, low cost, flexible manufacturing and the like, the structureof the whole memristor is easy to design, the technology is simple, the performance is stable, and the resistance change of the porphyrin memristor is of high similarity corresponding to the synapseof a human brain, so that the research of a synapse bionic device based on the memristor must bring new thought for the field of artificial intelligence, and the development of artificial intelligencedevices is promoted more accurately.

Description

technical field [0001] The invention belongs to the technical field of organic diode electric storage and memristive devices, in particular to a memristor with biological synapse simulation function and its preparation method, which is expected to be applied to neural network, mobile Internet, computer, artificial intelligence, storage technology, etc. field. technical background [0002] Memristor is a new type of electronic component with its unique nonlinear electrical characteristics. It is regarded as the fourth basic passive electronic component. It was proposed by Chinese scientist Professor Cai Shaotang in 1971. As soon as the discovery of memristor was reported, it aroused people's great attention and great research interest. The reported memristive systems involve a wide variety of materials and are based on a variety of physical properties of materials. There is no unified universal model to describe and predict their behavior. In 2008, HP Labs realized it for t...

Claims

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Application Information

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IPC IPC(8): H01L45/00
CPCH10N70/24H10N70/881H10N70/011
Inventor 仪明东刘露涛王来源马可陈叶张琪
Owner NANJING UNIV OF POSTS & TELECOMM
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