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Packaging method of MEMS device and preparation method of microactuator

A packaging method and micro-actuator technology, which are applied in the fields of electric solid-state devices, semiconductor devices, instruments, etc., can solve the problems of long production cycle, many intermediate links, high external temperature of bonding, etc., and reduce parasitic effects and delay time. , High efficiency of packaging and processing, and the effect of improving high-frequency performance

Inactive Publication Date: 2019-03-15
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] At present, the wafer-level packaging process is often used, which involves bonding technology. Common bonding technologies include anodic bonding, silicon-silicon direct bonding, glass paste bonding, metal eutectic bonding and metal thermocompression bonding. etc., but the above-mentioned technologies have the following disadvantages: 1. High processing environment requirements, high external temperature is required for bonding, and difficult operation; 2. Process control is difficult. With the increase of process steps, the process difficulty will increase. As it increases, it will affect the yield and performance of the device; 3. The cost is high, there are many intermediate links, and the production cycle is long

Method used

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  • Packaging method of MEMS device and preparation method of microactuator
  • Packaging method of MEMS device and preparation method of microactuator
  • Packaging method of MEMS device and preparation method of microactuator

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Embodiment 1

[0035] Figure 1A to Figure 1K The process flow of the packaging method of the MEMS device in the first embodiment is shown. The encapsulation method of the MEMS device of present embodiment 1 comprises:

[0036] Step 1: Refer to Figure 1A , providing the first substrate 20, etching the first surface 20a of the first substrate 20 to form the blind hole 21;

[0037] Specifically, the first substrate 20 adopts an ordinary semiconductor bare silicon wafer, and has a first surface 20a and a second surface 20b opposite to each other. The diameter ranges from 30um to 100um. The depth of the blind hole 21 is greater than half of the thickness of the first substrate 20, but must be smaller than the thickness of the first substrate 20. The number of blind holes 21 can be opened as many as required. The above-mentioned setting of the depth of the blind hole 21, on the one hand, ensures that the substrate is not easily fragmented when the material is grown on the first substrate 20 i...

Embodiment 2

[0054] figure 2 It shows a schematic structural diagram of the micro-actuator of the second embodiment. The micro-actuator manufacturing method includes the packaging method of the first embodiment. The difference between the two is that in step six, a At the same time as the first wiring layer 40, the first electrode layer 41 is formed on the first surface 20a; in step nine, while the device lead-out line 12 is formed on the second substrate 10, the Fabricate and form the second electrode layer 13, or in step ten, fabricate and form the second bonding ring 12 on the second substrate 10, while fabricating and forming the second electrode layer 13 on the second substrate 10, the first electrode Layer 41 is electrically opposite to the charges carried by the second electrode layer 13, so that after the second substrate 10 and the first substrate 20 are packaged, electrostatic adsorption occurs between the first electrode layer 41 and the second electrode layer 13. By controllin...

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Abstract

The present invention discloses a packaging method of an MEMS device, the method comprises: forming a blind hole on a first surface of a first substrate; forming a conductive pillar in the blind hole;forming a first wiring layer on the first surface, wherein the first wiring layer is in contact with the conductive pillar; etching a second surface of the first substrate opposite to the first surface until the blind hole is made into a through hole and the conductive pillar is exposed; forming a first bonding ring on the first wiring layer; forming the MEMS device and a device lead-out wire connecting to the MEMS device on a second substrate; forming a second bonding ring on the second substrate, wherein the second bonding ring is connected to the device lead-out wire; and bonding the firstbonding ring and the second bonding ring. The packaging method has high processing efficiency, low packaging cost, and short connection length, greatly shortens a signal transmission path and reducesresistance between the device and external circuits.

Description

technical field [0001] The invention relates to the field of micro-electromechanical system (MEMS) devices, in particular to a packaging method for MEMS devices and a preparation method for micro-actuators. Background technique [0002] Micro-Electro-Mechanical Systems (MEMS) includes multiple functional units, involving a wide range of disciplines and application fields, and it is difficult to classify them systematically. According to the different functions of the constituent units, MEMS can be roughly divided into micro-sensors, micro-actuators, micro-structures, and integrated systems including multiple units. According to the classification of processed materials, MEMS processing technologies mainly include silicon-based and non-silicon-based processing technologies. Now MEMS has gone far beyond the concepts of "machine" and "electricity". Structures and devices dealing with heat, light, magnetism, chemistry, and biology are manufactured on chips through micro-nano pr...

Claims

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Application Information

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IPC IPC(8): B81C1/00B81B7/00
CPCB81B7/0006B81B7/007B81C1/00301
Inventor 黄河俞挺程伟侯克玉
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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