Photoelectrochemical mechanical polishing processing method of semiconductor wafer

Abstract

The invention discloses a photoelectrochemical mechanical polishing processing method of a semiconductor wafer and a processing device. The method comprises the following steps that the wafer is fixedon a polishing head through a conductive adhesive in a bonding mode, and the wafer is connected to the positive electrode of an external power supply through leads of an inner ring and an outer ringof a conductive slip ring below the wafer; a polishing pad is adhered to the bottom of a counter electrode plate, the counter electrode plate is fixed at the bottom of a polishing plate, a through hole is formed in the position, corresponding to the polishing plate, of the counter electrode plate, and the counter electrode plate is connected to the negative electrode of the external power supply through the leads of the inner ring and the outer ring of the conductive slip ring above the counter electrode plate; and ultraviolet light emitted by an ultraviolet light source can irradiate the surface of the wafer through the through hole, and polishing solution can also be jetted into the through hole to be entered the contact area of the wafer and the polishing pad. The photoelectrochemical mechanical polishing processing device can well realize the processing method involved in the invention, and the processing device has the advantages that the operation is simple, the implementation iseasy, and the process parameters can be flexibly adjusted; and effects of being rapid in the removal rate and good in the processed surface quality can be obtained in actual processing of the galliumnitride wafers.

Description

technical field [0001] The invention relates to the technical field of polishing processing, more specifically to a photoelectrochemical mechanical polishing processing method of a semiconductor wafer. Background technique [0002] The third-generation semiconductor representative materials represented by gallium nitride (GaN), silicon carbide (SiC), and diamond have high thermal conductivity, high breakdown electric field, high electron saturation rate and high radiation resistance. Compared with the previous generation of semiconductor materials, it is more suitable for the production of high-temperature, high-frequency, high-power, radiation-resistant high-power devices. [0003] When GaN and SiC crystal materials are used as devices, the materials are required to have high surface quality, no scratches, microcracks, low dislocations, residual stress and other surface / subsurface damage. However, GaN and SiC crystal materials have large bond energy, strong chemical inertn...

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Problems solved by technology

[0004] It can be seen that in the process of removing subsurface damage by traditional CMP, the extremely high chemical inertness of the material makes the polishing removal rate extremely low, which leads to a series of problems such as long processing time and high cost.

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