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Preparation method for graphene

A graphene, oxygen source technology, applied in graphene, chemical instruments and methods, inorganic chemistry, etc., can solve the problem that the theoretical value is very different, it is difficult to repeatably, efficiently, safely and batch prepare graphene, and it is difficult to effectively improve graphene. Crystal domains and other problems, to achieve the effect of safe oxygen supply and high repeatability

Pending Publication Date: 2019-04-19
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the graphene prepared by the CVD method is a polycrystalline structure, and the properties of the currently prepared graphene samples differ greatly from the theoretical values ​​because the single crystal grain size is too small. Therefore, increasing the polycrystalline graphene single crystal grain size Is the most effective way to improve the properties of graphene
There are many ways to increase the graphene domain, such as increasing the substrate temperature, reducing the concentration of carbon sources, increasing the proportion of hydrogen, etc., but it is difficult to effectively improve the graphene domain without causing other harmful effects, and it is difficult to achieve high repeatability, high efficiency, and safety. And batch production of graphene

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preparation example Construction

[0037] like Figure 1-6 As shown, the present invention provides a preparation method of graphene, and the preparation method comprises the following steps:

[0038] providing a growth substrate, and the growth substrate has a growth surface;

[0039] providing a solid-state oxygen source with a spacing between the solid-state oxygen source and the growth surface; and

[0040] A graphene growth gas is provided and the solid state oxygen source is caused to provide an oxygen source to grow graphene on the growth surface based on the graphene growth gas and the oxygen source.

[0041] The above-mentioned order of steps can be adjusted according to the actual process, and is not limited to the above-mentioned order.

[0042] First, as figure 1 in S1 and figure 2 , 5 As shown, a growth substrate 100 is provided, and the growth substrate 100 has a growth surface 100a;

[0043] As an example, the material of the growth substrate 100 includes metal.

[0044] As an example, th...

Embodiment 1

[0077] The present embodiment provides a method for remote oxygen supply through copper oxide during CVD graphene growth, which specifically includes:

[0078] 1) oxidize a piece of clean copper foil 101a at high temperature in the air to form an oxide layer 101b on the surface as an oxide of copper, i.e. the solid oxygen source 101;

[0079] 2) Place the oxidized copper foil, that is, the solid-state oxygen source 101 on the opposite side of the growth substrate 100, with a quartz plate in the middle and the pillars 102 to separate, as shown in figure 2 shown, the distance between the copper oxide and the growth substrate is about 2 mm;

[0080] 3) The growth substrate and copper oxide and a piece of substrate not covered with copper oxide are used as comparative samples, and they are put into the heating area of ​​the quartz tube furnace together, evacuated, and 1000sccm of argon gas is introduced to normal pressure , open the air outlet of the cavity, and continue to intr...

Embodiment 2

[0086] The present embodiment provides a method for remote oxygen supply through copper oxide during CVD graphene growth, which specifically includes:

[0087] 1) oxidize a piece of clean copper foil 101a at high temperature in the air to form an oxide layer 101b on the surface as an oxide of copper, i.e. the solid oxygen source 101;

[0088] 2) Place the oxidized copper foil on the growth substrate 100, such as Figure 5 As shown, the graphene growth region 103 is a 0-1 cm region away from the copper oxide, and the graphene growth region 104 is a 1-2 cm region away from the copper oxide;

[0089] 3) Put the placed growth substrate and copper oxide into the heating area of ​​the quartz tube furnace, evacuate, pass 1000sccm argon gas to normal pressure, open the gas outlet of the cavity, and continue to pass 1000sccm argon gas to make the quartz cavity maintain normal pressure inside the body;

[0090] 4) Heating to 1000°C, feeding 1sccm CH4 and 20sccmH2, and maintaining for ...

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Abstract

The invention provides a preparation method for graphene. The preparation method includes providing a growth substrate which has a growth surface; providing a solid oxygen source, and maintaining a certain space distance between the solid oxygen source and the growth surface; and providing graphene growth gas, providing an oxygen source through the solid oxygen source, and growing graphene on thegrowth surface based on the graphene growth gas and the oxygen source. Through the technical schemes, the method controls the nucleation density of the graphene and the dimension of a graphene domainthrough a mode of providing the oxygen source during the growth of the graphene; and through the mode of solid oxygen source remote oxygen supply, problems of safety risk existing, substrate surface flatness decreasing, low oxygen supply amount and easy impurity introducing during oxygen supply can be solved, high-repeatability, efficient and safe oxygen supply can be realized, and the method is suitable for the batch preparation of CVD graphene.

Description

technical field [0001] The invention belongs to the technical field of graphene preparation, in particular to a preparation method of graphene. Background technique [0002] Graphene is made of sp 2 The hexagonal honeycomb two-dimensional inorganic crystal material composed of hybrid carbon atoms can be regarded as the basic structural unit of each-dimensional carbon materials (zero-dimensional buckyballs, one-dimensional carbon nanotubes, and three-dimensional graphite). The novel physical properties such as quantum Hall effect and weak localization effect found in graphene provide a model for basic physics research, and its high electron mobility, high light transmittance, high mechanical strength, anti-oxidation, easy modification Such excellent properties make graphene have broad application prospects in the fields of nanoelectronics, spintronics and environmental protection. [0003] At present, among many preparation methods such as highly oriented pyrolytic graphite...

Claims

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Application Information

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IPC IPC(8): C01B32/186
CPCC01B2204/32C01B32/186
Inventor 张燕辉于广辉隋妍萍陈志蓥
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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