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A method for preparing dense tin oxide thin film by ultrasonic oscillation at room temperature

A technology of ultrasonic oscillation and tin oxide, applied in the coating and other directions, can solve the problems of thermal deformation of PET and other polymer substrates, and achieve the effect of uniform and dense electrical conductivity, excellent electrical conductivity and energy saving.

Active Publication Date: 2021-08-10
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The technical problem to be solved by the present invention is to provide a method for preparing a dense tin oxide film by ultrasonic oscillation at room temperature, so as to overcome the defects in the prior art that the tin oxide film takes a long time to prepare or high temperature heat treatment causes thermal deformation of polymer substrates such as PET

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  • A method for preparing dense tin oxide thin film by ultrasonic oscillation at room temperature
  • A method for preparing dense tin oxide thin film by ultrasonic oscillation at room temperature
  • A method for preparing dense tin oxide thin film by ultrasonic oscillation at room temperature

Examples

Experimental program
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Effect test

Embodiment 1

[0043](1) Add 1.128g of stannous chloride dihydrate (purchased from Sigma-Aldrich) into 50ml of anhydrous isopropanol (purchased from Sinopharm) solution to prepare a 1M tin oxide precursor solution, at 70°C Reflux for 1 hour to obtain a tin oxide sol, and leave the tin oxide sol at room temperature to age for 8 hours to obtain a stable tin oxide sol;

[0044] (2) The PET sputtered with ITO (purchased from South China Xiangcheng Technology Co., Ltd.) was ultrasonically cleaned with glass cleaner, acetone, and ethanol for 20 minutes, and then dried in a 70°C oven for 45 minutes; on the pretreated conductive substrate Spin-coat the above-mentioned 1M tin oxide sol at 3000 rpm to obtain a tin oxide sol film;

[0045] (3) The tin oxide sol thin film was ultrasonically oscillated at room temperature for 3 min at 10 W to obtain a uniform and dense tin oxide thin film.

[0046] The obtained tin oxide thin film of present embodiment is observed by scanning electron microscope, and th...

Embodiment 2

[0050] The preparation process is the same as steps (1) and (2) in Example 1 to obtain a tin oxide sol film. The prepared sol film was ultrasonically oscillated at 10 W for 2 min to obtain a tin oxide film.

[0051] The tin oxide film obtained in the present embodiment is observed by X-ray diffractometer, and the results are as follows: Figure 5 As shown, a crystallized tin oxide film is obtained, and the diffraction peak corresponding to the (101) crystal plane at the 2θ angle of 37.7° is weaker than that of the sample shaken at 10W for 3 minutes.

[0052] The tin oxide thin film obtained in the present embodiment obtains the I-V curve of thin film by Keithley source meter, and the result is as follows Image 6 As shown, according to the formula: conductivity = film thickness / (area · slope), the area and film thickness are fixed at 16mm 2 and 30nm, the slope value in the figure is 72.37, according to the formula calculation, the conductivity of the tin oxide film is 0.13...

Embodiment 3

[0054] The preparation process is the same as steps (1) and (2) in Example 1 to obtain a tin oxide sol film. The prepared sol film was ultrasonically oscillated at 15W for 1 min to obtain a tin oxide film.

[0055] The tin oxide film obtained in the present embodiment is observed by X-ray diffractometer, and the results are as follows: Figure 7 As shown, the crystallized tin oxide film was obtained, and the diffraction peak corresponding to the (101) crystal plane at the 2θ angle of 37.7° was slightly weaker than that of the sample shaken at 10W for 3 minutes, and stronger than that of the sample shaken at 10W for 2 minutes.

[0056] The tin oxide thin film obtained in the present embodiment obtains the I-V curve of thin film by Keithley source meter, and the result is as follows Figure 8 As shown, according to the formula: conductivity = film thickness / (area · slope), the area and film thickness are fixed at 16mm 2 and 30nm, the value of the slope in the figure is 114.0...

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Abstract

The invention relates to a method for preparing a dense tin oxide film by ultrasonic oscillation at room temperature. The method comprises: adding the tin salt into the solvent, reflux reaction, then standing and aging, spin-coating the obtained tin oxide sol on the pretreated conductive substrate, and finally ultrasonically vibrating. The method obtains a tin oxide thin film with good crystallinity, uniform density and excellent electrical conductivity, plays a role of low-temperature sintering, and is especially suitable for forming a film on the surface of a polymer substrate.

Description

technical field [0001] The invention belongs to the field of tin oxide thin film preparation, in particular to a method for preparing dense tin oxide thin film by ultrasonic oscillation at room temperature. Background technique [0002] Tin oxide is an important electronic, ceramic and chemical material. In the field of electrical and electronics, tin oxide thin films have transparent and conductive properties, good thermodynamic, chemical and mechanical stability, and no biological toxicity. They can be used as transparent electrode materials and are widely used in solar cells, thin film resistors and flat panel displays. middle. [0003] At present, the methods for preparing tin oxide thin films mainly include sol-gel, chemical bath deposition and atomic layer deposition. The sol-gel method is the most commonly used method for preparing tin oxide thin films. During the preparation process, heat treatment above 180°C is usually required to promote the crystallization of t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C03C17/34C03C17/25C08J7/06C08L67/02
Inventor 张青红张歆木兰侯成义李耀刚王宏志
Owner DONGHUA UNIV