High-strength and high-toughness silicon carbide ceramic bearing plate, manufacturing method and application thereof

Abstract

The invention discloses a high-strength and high-toughness silicon carbide ceramic bearing plate, a manufacturing method and application thereof. The silicon carbide ceramic bearing plate is preparedfrom the following materials in parts by mass: 70-95 parts of silicon carbide, 2-10 parts of silicon carbide whiskers, 1 to 15 parts of tungsten carbide, 0.5 to 5 parts of boron carbide, 1 to 10 partsof a binder and 0.5 to 10 parts of a lubricant. The manufacturing method comprises burdening, mixing, pulping, spray drying, isostatic pressing, sintering and finish machining. The silicon carbide ceramic bearing plate is applied to the assembly of chemical-mechanical polishing devices. According to the silicon carbide ceramic bearing plate made by the manufacturing method, the strength and toughness are greatly superior to a common corundum ceramic bearing plate at present; a ceramic bearing plate with the same size can be reduced by 1/3 in thickness; the ceramic bearing plate is applied tothe chemical-mechanical polishing devices, the stability in the polishing process is greatly improved, the reliability in the operation process is greatly increased, the service life of the ceramic bearing plate is greatly prolonged, and the process manufacturing cost is reduced.

Description

technical field [0001] The invention relates to a carrier plate, a manufacturing method and an application, in particular to a high-strength and high-toughness silicon carbide ceramic carrier plate, a manufacturing method and an application. Background technique [0002] Chemical Mechanical Polishing (CMP) is an important process for obtaining high-precision silicon wafers in semiconductor manufacturing. It mainly uses the chemical reaction between the silicon wafer material and the oxidant and catalyst in the polishing liquid to form a soft layer that is relatively easy to remove, and then removes the soft layer under the mechanical action of the abrasive in the polishing liquid and the polishing pad. The surface of the workpiece is exposed again, and then the chemical reaction is carried out, so that the surface polishing of the silicon wafer is completed in the alternating process of chemical action and mechanical action. [0003] In the CMP process, the silicon wafer is...

AI Technical Summary

Problems solved by technology

However, at present, the specific rigidity of the corundum carrier plate is low, the thickness is large, and its strength and toughness are low, so it is easy to be damaged by bumps during use.

At the same time, due to the certain corrosive effect of the polishing liquid, the service life of the carrier plate is relatively low, and the accuracy usually decreases within half a year, requiring rework

Especially as the diameter of the silicon wafer increases, the corundum disk is prone to thermal deformation due to its low thermal conductivity, which has a greater impact on high-precision silicon wafers