A plasma waste gas treatment device and method

A waste gas treatment device and plasma technology, applied in separation methods, chemical instruments and methods, and dispersed particle separation, can solve the problems of limited perfluoride treatment capacity and low efficiency, and achieve protection of subsequent equipment and gas-liquid mass transfer full, responsive effect
CN109821373BActive Publication Date: 2020-09-01上海高笙集成电路设备有限公司
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
上海高笙集成电路设备有限公司
Publication Date
2020-09-01

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Abstract

The invention provides a plasma waste gas treatment device and method, and belongs to the technical field of waste gas treatment.The plasma waste gas treatment device comprises a thermal reaction system, an air inlet system, a cooling system, a multistage purification washing system, an exhaust system and a liquid circulating system, and the structureis compact, safe and reliable.The plasma wastegas treatment method comprises the following steps of: carrying out high-temperature cracking reaction after waste gas to be treated enters into the thermal reaction system through the air inlet system, and carrying out quenching and preliminary purification after entering the cooling system; carrying out washing and purification for a plurality of times after entering the multistage washing system; finally discharging the waste gas from a chimney through a dehydration layer under the action of an induced draft fan.The waste gas is subjected to high-temperature cracking, cooling, preliminary purification and multistage purification, so that the purification speed is obviously improved; and the waste gas which can be treated by the method comprises perfluorides, inflammable substances, corrosion, poisons and the like, the purification is thorough, the method is safe and reliable.
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Description

technical field

[0001] The invention relates to the technical field of waste gas treatment, in particular to a plasma waste gas treatment device and method. Background technique

[0002] The development of the integrated circuit industry has risen to a national strategy, which is related to national defense technology, national security and other aspects of the national economy and people's livelihood. With the rapid growth of the integrated circuit industry, the hidden industrial pollution problem has also been paid more and more attention. A large amount of flammable, corrosive or highly toxic chemical raw materials must be used in the integrated circuit manufacturing process, and the utilization rate of chemical raw materials in the integrated circuit manufacturing process is set at a very low ratio. In this way, incompletely reacted residual chemical raw materials, reaction by-products, and harmful steam evaporated from the raw material tank during the integrated circui...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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