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Silicon carbide/boron nitride fiber co-doped with beryllium and hafnium and its preparation method and application

A boron nitride fiber, co-doping technology, applied in the chemical characteristics of fibers, rayon manufacturing, textiles and papermaking, etc., can solve the problems of low thermal conductivity and poor thermal shock resistance, and achieve high melting point and thermal shock resistance. Strong performance and strong corrosion resistance

Active Publication Date: 2021-08-27
江西信达航科新材料科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In addition, although SiC fibers have been extensively studied, considering the high temperature performance, thermal stability and weaving performance, the existing ultra-high temperature ceramics have shortcomings such as poor thermal shock resistance or low thermal conductivity.

Method used

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Examples

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preparation example Construction

[0023] The invention provides a method for preparing silicon carbide / boron nitride fibers co-doped with beryllium and hafnium, comprising the following steps:

[0024] S1: Preparation of silicon carbide / boron nitride precursor co-doped with beryllium and hafnium

[0025] Take beryllium acetylacetonate, hafnium tetrachloride and polyborosilazane with a mass ratio of (1-4.5): 100:15 in an autoclave, and slowly inject pure polydimethylsilane (PCS) into the autoclave, Uniformly cover the surface of the mixture of beryllium acetylacetonate, hafnium tetrachloride and polyborosilazane, then rapidly heat up to 180°C at a rate of 20°C / min, and keep the temperature for 2 hours to obtain a crude material. The crude material is dissolved in xylene, filtered, and vacuum distilled to obtain a silicon carbide / boron nitride precursor fine material co-doped with beryllium and hafnium.

[0026] S2: Melt spinning of silicon carbide / boron nitride precursors co-doped with beryllium and hafnium

[...

Embodiment 1

[0032] This embodiment provides a method for preparing silicon carbide / boron nitride fibers co-doped with beryllium and hafnium, comprising the following steps:

[0033] S1: Preparation of silicon carbide / boron nitride precursor co-doped with beryllium and hafnium

[0034] Take beryllium acetylacetonate, hafnium tetrachloride and polyborosilazane with a mass ratio of 1:100:15 in the autoclave, slowly inject pure polydimethylsilane (PCS) into the autoclave, and evenly cover the acetylene The surface of the mixture of beryllium acetone, hafnium tetrachloride and polyborosilazane was rapidly heated to 180°C at a rate of 20°C / min, and kept for 2 hours to obtain a crude material. The crude material is dissolved in xylene, filtered, and vacuum distilled to obtain a silicon carbide / boron nitride precursor fine material co-doped with beryllium and hafnium.

[0035] S2: Melt spinning of silicon carbide / boron nitride precursors co-doped with beryllium and hafnium

[0036] Put the fine...

Embodiment 2

[0041] This embodiment provides a method for preparing silicon carbide / boron nitride fibers co-doped with beryllium and hafnium, comprising the following steps:

[0042] S1: Preparation of silicon carbide / boron nitride precursor co-doped with beryllium and hafnium

[0043] Take beryllium acetylacetonate, hafnium tetrachloride and polyborosilazane with a mass ratio of 3:100:15 in an autoclave, and slowly inject pure polydimethylsilane (PCS) into the autoclave to evenly cover the acetylene The surface of the mixture of beryllium acetone, hafnium tetrachloride and polyborosilazane was rapidly heated to 180°C at a rate of 20°C / min, and kept for 2 hours to obtain a crude material. The crude material is dissolved in xylene, filtered, and vacuum distilled to obtain a silicon carbide / boron nitride precursor fine material co-doped with beryllium and hafnium.

[0044] S2: Melt spinning of silicon carbide / boron nitride precursors co-doped with beryllium and hafnium

[0045] Put the fin...

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Abstract

The invention relates to a silicon carbide / boron nitride fiber co-doped with beryllium and hafnium, a preparation method and application thereof. The method comprises the following steps: first preparing a silicon carbide / boron nitride precursor co-doped with beryllium and hafnium, and then performing melt spinning of the precursor and sintering treatment of silicon carbide / boron nitride fibers. The present invention introduces beryllium, hafnium, boron and nitrogen elements into the precursor, and introduces N element again during the sintering process, and the prepared silicon carbide / boron nitride fiber contains beryllium and hafnium, which has good mechanical properties and excellent high temperature resistance; In particular, there are silicon carbonitride nanometers at the interface of the silicon carbide / boron nitride fiber, and the strength of the prepared silicon carbide / boron nitride fiber at room temperature is 3.7±0.2GPa, and the elastic modulus is 270±20GPa; it is treated in an air environment of 1100°C for 100h Finally, the strength retention rate can still reach more than 86%. In the field of high-performance fibers, such as antenna windows and radome of electromagnetic wave permeable materials, it has a wide range of practical value and application prospects.

Description

technical field [0001] The invention relates to the technical field of high-performance ceramic fibers, in particular to a silicon carbide / boron nitride fiber co-doped with beryllium and hafnium and its preparation method and application. Background technique [0002] Silicon carbide (SiC) fiber is a kind of ceramic fiber with high strength and high modulus, oxidation resistance, wear resistance, corrosion resistance and small specific gravity. Various countries in the world have carried out extensive research on the preparation of continuous SiC fibers, which have extremely broad application prospects in high-tech fields such as aviation, machinery, chemical industry, aerospace, and weapons. At present, the strength of SiC fiber can reach 3.0±0.4GPa, the modulus can reach 200±20GPa, and the service temperature can reach 1000°C. Due to its low room temperature strength and insufficient toughness, its application is limited to a certain extent. In order to improve the streng...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): D01F9/10D01F1/10
Inventor 吴宝林侯振华
Owner 江西信达航科新材料科技有限公司
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